22JUNE Search Results

Contextual Info: 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 7 RELEASED FOR PUBLICATION BY TYCO ELECTRONIC5 CORPORATION. LOC ALL RIGHTS RESERVED. REVISIONS D IS T CM 00 LTR DESCRIPTION DATE REVISED PER EC 0G3B-1099-04 22JUNE05 OWN APVD KW DB 1\ M A T E R IA L H O U S IN G : P O L Y A M I D E

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

LGA-52

Abstract: LGA52 NAND LGA52 NAND08GW3B2C NAND04GW3B2DN6 NAND08GW3B4C NAND04GW4B2D NAND08GR NAND08GW lga52 footprint
Contextual Info: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage

Contextual Info: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.02 03/2014 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

Contextual Info: Product data sheet Industrial MultiMedia Card M-1 Series A 3.31, 4.1, and 4.2 compliant Extended and industrial temperature grade B U: Date : Re vi si o n: Sw i ss b it Gr ou p 31 . Au gu st 20 1 1 1 .3 0 M -1 0 0_d at a_ she e t_ M M -O x B N_Re v1 3 0. do c

200V transistor npn 10a

Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
Contextual Info: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER

Contextual Info: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.00 09/2013 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

M50LPW080

Abstract: PLCC32
Contextual Info: M50LPW080 8 Mbit 1M x8, Uniform Block 3V Supply Low Pin Count Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3.0 to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional)

Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

VDFPN8 package

Abstract: TBGA24
Contextual Info: M25PX16 16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.3 V to 3.6 V single supply voltage „ Dual input/output instructions resulting in an

M25PX16

Contextual Info: M25PX16 16-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features „ SPI bus compatible serial interface „ 75 MHz maximum clock frequency „ 2.3 V to 3.6 V single supply voltage „ Dual input/output instructions resulting in an

AN2824

Abstract: STM32 stm32f100 stm32f105 errata stm32f105 STM32F10* I2C STM32F10* I2C errata stm32f105* errata STM32F101 DMA stm32
Contextual Info: AN2824 Application note STM32F10xxx I2C optimized examples Introduction The aim of this application note is to provide I2C firmware optimized examples based on polling, interrupts and DMA, covering the four I2C communication modes available in the STM32F10xxx, that is, slave transmitter, slave receiver, master transmitter and master

M50LPW080

Abstract: PLCC32 PLCC32 package
Contextual Info: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for

Contextual Info: M50LPW080 8 Mbit 1M x8, Uniform Block 3V Supply Low Pin Count Flash Memory NOT FOR NEW DESIGN FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 3.0 to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast

LGA52

Abstract: LGA-52 NAND04GW3B2D nand flash ONFI 3.0 NAND08GW3B2C NAND04GR4B2D NAND04G-B2D NAND04GR3B2D ONFI nand NAND LGA52
Contextual Info: NAND04G-B2D, NAND08G-BxC 4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash Memory – Up to 8 Gbit memory array – Cost-effective solution for mass storage

NAND04GB2D

Abstract: NAND04G-B2D
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

RLR RESISTORS

Abstract: AA59569R36N0250 raychem AD-1377 AA59569R36N0171 RLR32C raychem ir-550 AA55517 AA59569R3 ad 1377 crimp tool raychem heat shrink 06090
Contextual Info: SPECIFICATION CONTROL DRAWING 1 SLEEVE, OUTER COVER, Qty/kit: 1 3) SLEEVE, INNER COVER, Qty/kit: 1 2) SLEEVE, INTERMEDIATE COVER, Qty/kit: 1 4) BRAID, OUTER, Qty/kit: 1 5) BRAID, Qty/kit: 1 6) SOLDERSLEEVE, Qty/kit: 2 7) SOLDERSLEEVE, Qty/kit: 2 8) SEALING SLEEVE, Qty/kit: see sht. 2, item 8

Contextual Info: CWDM305P SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed

Contextual Info: MC9S12ZVH-Family Reference Manual HCS12 Microcontrollers MC9S12ZVHRMV1 Rev. 1.03 06/2014 freescale.com To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier revision. To verify you have the latest information

Low pin count bus

Abstract: low pin count lpc
Contextual Info: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for

Contextual Info: DOC No. HX8664-B-DS HX8664-B 960CH TFT LCD Gate Driver Preliminary version 01 June, 2009 HX8664-B 960CH TFT LCD Gate Driver Preliminary Version 01 June, 2009 1. General Description The HX8664-B is a 960-channel outputs gate driver, which is used for driving the

FFBC0100

Abstract: BIOS Flash ROM Chip datasheet M50LPW080 PLCC32
Contextual Info: M50LPW080 8 Mbit 1Mb x8, Uniform Block 3V Supply Low Pin Count Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VCC = 3V to 3.6V for Program, Erase and Read Operations – VPP = 12V for Fast Program and Fast Erase (optional) ■ TWO INTERFACES – Low Pin Count (LPC) Standard Interface for

el inverter

Abstract: MC33441 capacitor package Distributors and Sales Partners
Contextual Info: Order this publication as PBMC33441/D Semiconductor Components Group Analog, Logic and Discretes 22-June-1999 er IC s v i r D t mp Produc a L ent c able s t e r n o i lum ys in P o r t Elec ispla D CD for L Introduction The MC33441 Electroluminescent Lamp EL Driver IC is a DC-AC inverter

LGA52

Abstract: NAND LGA52 LGA-52 ONFI 3.0 NAND08GW3B2C NAND04GW3B2dn6
Contextual Info: NAND04G-B2D, NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications