22JUL10 Search Results

10ETS

Abstract: 10ETS08 10ETS12 AN-994
Contextual Info: 10ETS08PbF, 10ETS12PbF High Voltage Series Vishay Semiconductors Input Rectifier Diode, 10 A FEATURES Base cathode 2 • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level APPLICATIONS TO-220AC • Input rectification • Vishay Semiconductors switches and output rectifiers

Contextual Info: Not Available for New Designs, Use VS-UFB130FA60 UFB120FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 120 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: Not Available for New Designs, Use VS-HFA90FA120 HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal

Contextual Info: Not Available for New Designs, Use VS-UFB230FA60 UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape

Contextual Info: HFA120FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 120 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

Contextual Info: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package

Contextual Info: UFL60FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

Contextual Info: HFA80FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 80 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

VPR5Z

Contextual Info: VPR5Z, VPR7Z Vishay Foil Resistors Ultra High Precision Bulk Metal Z-Foil Technology Power Current Sensing Resistors with TCR of ± 0.05 ppm/°C and Power Rating up to 7 W FEATURES • Temperature coefficient of resistance TCR : ± 0.05 ppm/°C (0 °C to 60 °C)

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

gt100

Abstract: GT100NA120UX
Contextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

Contextual Info: HFA60FA120P Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 60 A FEATURES • Fast recovery time characteristic • Electrically isolated base plate • Large creepage distance between terminal • Simplified mechanical designs, rapid assembly

Contextual Info: GB75DA120UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast IGBT , 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package

UFB200FA

Contextual Info: UFB200FA60P Vishay Semiconductors Insulated Ultrafast Rectifier Module, 200 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Ultrafast reverse recovery • Ultrasoft reverse recovery current shape • Low forward voltage

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

GB100DA60UP

Contextual Info: GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED antiparallel diodes with ultrasoft reverse recovery

Contextual Info: 145104-01-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: REV DESCRIPTION A THIRD ANGLE PROJ. B SMB RIGHT ANGLE CRIMP PLUG - P/N: 142194 CABLE RG-316 CABLE ECO 30-Sep-10 2104 RELEASE TO MFG. 22-Jul-10 SEE SHEET 1 27-Mar-14 SMB R/A CRIMP PLUG P.NO WAS 142193

1114A

Abstract: GB50LA120UX
Contextual Info: GB50LA120UX Vishay Semiconductors "Low Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227

GT100DA120U

Contextual Info: GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor Trench IGBT , 100 A FEATURES • Trench IGBT technology temperature coefficient with positive • Square RBSOA • 10 s short circuit capability • HEXFRED antiparallel diodes with ultrasoft reverse

IRFP250

Abstract: UFH60GA60P E78996 rectifier module 0 227 200 001 SO 227 Package
Contextual Info: UFH60GA60P Vishay Semiconductors Tandem Insulated SOT-227 Power Module Hyperfast Rectifier, 60 A FEATURES • Two fully independent diodes • Ceramic fully insulated package VISOL = 2500 VAC • Hyperfast reverse recovery • Optimized for power conversion: welding and industrial

GB50NA120UX

Contextual Info: GB50NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Ultrafast IGBT , 50 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227

GT100NA120UX

Contextual Info: GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 Trench IGBT , 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED clamping diode • 10 s short circuit capability • Fully isolated package SOT-227

anti-fretting lubricant

Abstract: 0 265 006 256 tyco 17105-3608
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 RELEASED FOR ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N IN T E R N A T IO N A L R IG H T S 2 , - LOC RESERVED. C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N