MBRF20H150CT
Abstract: No abstract text available
Text: MBR20H150CT, MBRF20H150CT & SB20H150CT-1 Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 µA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop
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MBR20H150CT,
MBRF20H150CT
SB20H150CT-1
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
MBR20H150CT
O-262AA
MBRF20H150CT
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Untitled
Abstract: No abstract text available
Text: FEP30AP thru FEP30JP Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low thermal resistance 3 2 • High forward surge capability
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FEP30AP
FEP30JP
2002/95/EC
2002/96/EC
O-247AD
J-STD-002B
JESD22-B102D
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SBL4030PT & SBL4040PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation
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SBL4030PT
SBL4040PT
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
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VTS40100CT
Abstract: VB40100C
Text: VTS40100CT, VF40100C, VB40100C & VI40100C New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses
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VTS40100CT,
VF40100C,
VB40100C
VI40100C
O-220AB
ITO-220AB
VTS40100CT
VF40100C
J-STD-020C,
O-263AB
VTS40100CT
VB40100C
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V80100P
Abstract: JESD22-B102D J-STD-002B v80100
Text: V80100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.425 V at IF = 10 A FEATURES • Trench MOS Schottky Technology • Low forward voltage drop, low power losses • High efficiency operation
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V80100P
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
V80100P
JESD22-B102D
J-STD-002B
v80100
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MBR10H90CT
Abstract: No abstract text available
Text: MBR F,B 10H90CT & MBR(F,B)10H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection ITO-220AB • Lower power losses, high efficiency
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10H90CT
10H100CT
O-220AB
ITO-220AB
J-STD-020C,
O-263AB
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
MBR10H90CT
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Untitled
Abstract: No abstract text available
Text: MBR40H35PT thru MBR40H60PT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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MBR40H35PT
MBR40H60PT
2002/95/EC
2002/96/EC
O-247AD
08-Apr-05
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MBR25H35CT
Abstract: No abstract text available
Text: MBR F,B 25H35CT thru MBR(F,B)25H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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25H35CT
25H60CT
O-220AB
ITO-220AB
J-STD-020C,
O-263AB
O-220AB
ITO-220AB
MBR25HxxCT
MBRF25HxxCT
MBR25H35CT
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MBR30H60CT
Abstract: MBR30H35CT MBR30H45CT-E3/45 MBRB30H45CT JESD22-B102D J-STD-002B MBR30H45CT
Text: MBR F,B 30H35CT thru MBR(F,B)30H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency
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30H35CT
30H60CT
O-220AB
J-STD-020C,
O-263AB
ITO-220AB
2002/95/EC
2002/96/EC
ITO-220AB
MBR30H60CT
MBR30H35CT
MBR30H45CT-E3/45
MBRB30H45CT
JESD22-B102D
J-STD-002B
MBR30H45CT
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2535CT
Abstract: MBR2545CT-E3/45 MBRB2545CT-E3 JESD22-B102D J-STD-002B MBR2535CT
Text: MBR F,B 2535CT thru MBR(F,B)2560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency ITO-220AB • Low forward voltage drop • High forward surge capability
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2535CT
2560CT
O-220AB
ITO-220AB
MBR25xxCT
J-STD-020C,
O-263AB
MBRF25xxCT
ITO-220AB
MBR2545CT-E3/45
MBRB2545CT-E3
JESD22-B102D
J-STD-002B
MBR2535CT
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BYQ28E
Abstract: BYQ28EF UG10 UGF10 ug DIODE ON
Text: BYQ28E F,B -100 thru BYQ28E(F,B)-200, UG(F,B)10BCT thru UG(F,B)10DCT Vishay General Semiconductor Dual Common Cathode Ultrafast Rectifier FEATURES ITO-220AB TO-220AB • Glass passivated chip junction • Ultrafast recovery times • Soft recovery characteristics
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BYQ28E
10BCT
10DCT
ITO-220AB
O-220AB
BYQ28E
BYQ28EF
UGF10
BYQ28EF
UG10
UGF10
ug DIODE ON
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m6045c
Abstract: No abstract text available
Text: M6035C thru M6060C New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guarding for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation
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M6035C
M6060C
2002/95/EC
2002/96/EC
O-220AB
O-220AB
J-STD-00s
08-Apr-05
m6045c
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15H60CT
Abstract: MBR15H35CT
Text: MBR F,B 15H35CT thru MBR(F,B)15H60CT New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AB ITO-220AB 2 3 1 1 MBR15HxxCT PIN 1 PIN 2 PIN 3 CASE 2 3 MBRF15HxxCT
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15H35CT
15H60CT
O-220AB
ITO-220AB
MBR15HxxCT
MBRF15HxxCT
O-263AB
J-STD-020C,
O-220AB
15H60CT
MBR15H35CT
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Untitled
Abstract: No abstract text available
Text: SBL F,B 1030CT & SBL(F,B)1040CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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1030CT
1040CT
O-220AB
ITO-220AB
SBL10xxCT
SBLF10xxCT
J-STD-020C,
O-263AB
O-220AB
ITO-220AB
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Untitled
Abstract: No abstract text available
Text: FEP F,B 6AT thru FEP(F,B)6DT Vishay General Semiconductor Dual Common-Cathode Ultrafast Rectifier TO-220AB FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low leakage current • High forward surge capability
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O-220AB
ITO-220AB
O-263AB
J-STD-020C,
O-220AB
ITO-220AB
2002/95/EC
2002/96/EC
08-Apr-05
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transistor smd qe
Abstract: 15MPA0566-QE
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN 15MPA0566-QE August 2006 - Rev 22-Aug-06 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing Chip Device Layout General Description
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22-Aug-06
15MPA0566-QE
Millim66-QE-EV1
transistor smd qe
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1535CT
Abstract: MBR1550CT JESD22-B102D J-STD-002B MBR1535CT 1560CT B1535CT
Text: MBR F,B 1535CT thru MBR(F,B)1560CT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection ITO-220AB TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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1535CT
1560CT
ITO-220AB
O-220AB
MBR15xxCT
J-STD-020C,
O-263AB
MBRF15xxCT
ITO-220AB
MBR1550CT
JESD22-B102D
J-STD-002B
MBR1535CT
1560CT
B1535CT
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MBR4060PT
Abstract: JESD22-B102D J-STD-002B MBR4035PT MBR4045PT MBR4050PT
Text: MBR4035PT thru MBR4060PT Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop 3 • High forward surge capability 2 1 • High frequency operation
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MBR4035PT
MBR4060PT
O-247AD
2002/95/EC
2002/96/EC
08-Apr-05
MBR4060PT
JESD22-B102D
J-STD-002B
MBR4045PT
MBR4050PT
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BZE6-2RN18-C3
Abstract: No abstract text available
Text: MCRO SWITCH a Honeywell Division FED. MF9• CODE CATALOG SWITCH - LISTING B Z E 6 -2 R N 1 8 -C 3 ENCLOSED 9192B tr> 1 1.00 • - ACROSS FLATS 00 z 6 - 3 2 UNC X .312 FLAT HEAD SELF LOCKING SCREW 4X SEAL RING (X CM 2X 6 - 3 2 UNC HEX NUT 1 CO LJ 2X 6 - 3 2 UNC X (1.750) ROUND
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22AUG06
300CT06
OD33014
29AUG07
919ZB
BZE6-2RN18-C3
6-32RTY
POSITION-----15Â
BZE6-2RN18-C3
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 AUGUST ,2006- LOC ALL RIGHTS RESERVED. REVISIONS DIST E B P NOTES: D B A PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275
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22AUG06
RG58C/U,
41A/U,
URM45,
31MAR2000
B478212
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUGUST ,2006- LOC ALL RIGHTS RESERVED. E DIST R E V IS IO N S B LTR NOTES: DESCRIPTION B /K PACK IN ACCORDANCE WITH AMP SPEC 107-3275 /K 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275
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22AUG06
22AUG06
31MAR2000
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47821
Abstract: ECRE
Text: T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T 2006 By P U B L IC A T IO N R IG H TS A U G U S T ,2 0 0 6 - REVISIO N S RESERVED. E - LTR D E S C R IP T IO N NOTES: ECR- /\ PACK IN ACCORDANCE WITH AMP SPEC 107- 3275 /K
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22AUG06
22AUG
213/U
URM67,
47821
ECRE
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Untitled
Abstract: No abstract text available
Text: 12 11 10 I B SYMBOL D E FIN ITIO N A DIMENSION WITHOUT AN INSPECTION REPORT SYMBOL C~ DOES NOT REQUIRE INSPECTION. IT MAY BE CONTROLLED ON THE INDIVIDUAL COMPONENT DRAWING. H CD MISSING SYMBOLS TOTAL NO OF INSPECTIONS REQUIRED 10 LAST NO. USED 10 NO MISSING
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20JN02
25JL02
150C02
24MR03
UhLE55
ESA-710
C-4006
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2006 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 AUG ,2006- LOC ALL RIGHTS RESERVED. E 1 REVISIONS DIST B NOTES: D LTR B /\ PACK IN ACCORDANCE WITH AMP SPEC 107-3275 A 100 TRAY PACK IN ACCORDANCE WITH AMP SPEC 107-3275
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OCR Scan
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PDF
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22AUG06
URM67,
31MAR2000
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