DP8420AV-20
Abstract: DP820 DP8422AV-25 DP8421A C1995 DP8420A DP8420AV-25 DP8422A V68A 8420a
Text: DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a low cost single chip interface between dynamic RAM and all 8- 16- and 32-bit systems The DP8420A 21A 22A generate all the required access control signal timing for
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DP8420A
32-bit
DP8420AV-20
DP820
DP8422AV-25
DP8421A
C1995
DP8420AV-25
DP8422A
V68A
8420a
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VNQ600A
Abstract: VND600 VNQ600AP VNQ600AP13TR
Text: VNQ600AP P QUAD CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VNQ600AP RDS on (*) 35mΩ Ilim 22A VCC 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE nSHUT-DOWN
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VNQ600AP
SO-28
VNQ600AP13TR
VND600
VNQ600A
VNQ600AP
VNQ600AP13TR
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DP8421AV-25
Abstract: No abstract text available
Text: DP8420A,DP8421A,DP8422A DP8420A DP8421A DP8422A microCMOS Programmable 256k/1M/4M Dynamic RAM Controller/Drivers Literature Number: SNOSBX7A DP8420A 21A 22A microCMOS Programmable 256k 1M 4M Dynamic RAM Controller Drivers General Description Features The DP8420A 21A 22A dynamic RAM controllers provide a
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DP8420A
DP8421A
DP8422A
DP8422A
256k/1M/4M
DP8421AV-25
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VND600
Abstract: VNQ600A VNQ600AP VNQ600AP13TR
Text: VNQ600AP P QUAD CHANNEL HIGH SIDE SOLID STATE RELAY TYPE VNQ600AP RDS on (*) 35mΩ Ilim 22A VCC 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE nSHUT-DOWN
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VNQ600AP
VNQ600AP
SO-28
VNQ600AP13TR
VND600
VNQ600A
VNQ600AP13TR
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22A50
Abstract: 22a33 AMC7622 AMC7622A-XXSK
Text: AMC DOC. #: AMC7622_B November 2002 AMC7622/AMC7622A ADD MICROTECH CORP. 750mA LOW DROPOUT REGULATOR DESCRIPTION FEATURES The AMC7622/22A series are low dropout regulators rated for 750mA output current. AMC7622/22A series can regulate with as low as 100mV headroom between the input
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AMC7622
AMC7622/AMC7622A
750mA
AMC7622/22A
100mV
150mA
AMC7622/22A-3
22A50
22a33
AMC7622A-XXSK
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VND600-E
Abstract: VNQ600AP-E VNQ600APTR-E
Text: VNQ600AP-E QUAD CHANNEL HIGH SIDE DRIVER Table 1. General Features Figure 1. Package TYPE RDS on (*) Ilim VCC VNQ600AP-E 35mΩ 22A 36 V (*) Per each channel DC SHORT CIRCUIT CURRENT: 22A • CMOS COMPATIBLE INPUTS ■ PROPORTIONAL LOAD CURRENT SENSE ■ UNDERVOLTAGE & OVERVOLTAGE
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VNQ600AP-E
2002/95/EC
SO-28
VNQ600AP-E
VND600-E
VNQ600APTR-E
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FSF9150R4
Abstract: 2E12 JANSR2N7403
Text: JANSR2N7403 Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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JANSR2N7403
FSF9150R4
-100V,
FSF9150R4
2E12
JANSR2N7403
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8520a
Abstract: C1995 DP8500 DP8520A DP8520AV-20 DP8520AV-25 DP8521A DP8522A V68A Dual Port V-RAM
Text: May 1992 DP8520A DP8521A DP8522A microCMOS Programmable 256k 1M 4M Video RAM Controller Drivers General Description Features The DP8520A 21A 22A video RAM controllers provide a low cost single chip interface between video RAM and all 8- 16- and 32-bit systems The DP8520A 21A 22A generate all the required access control signal timing for VRAMs
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DP8520A
DP8521A
DP8522A
32-bit
8520a
C1995
DP8500
DP8520AV-20
DP8520AV-25
V68A
Dual Port V-RAM
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2E12
Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSF9150D,
FSF9150R
-100V,
2E12
FSF9150D
FSF9150D1
FSF9150D3
FSF9150R
FSF9150R1
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXGF20N300 High Voltage IGBT VCES = 3000V = 22A IC25 VCE sat ≤ 3.2V For Capacitor Discharge Applications ( Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 3000
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IXGF20N300
20N250
4P-P528
2-04-09-A
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IXBF32N300
Abstract: B32N ic901 32N300 32N30
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF32N300
32N300
IXBF32N300
B32N
ic901
32N30
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF32N300
32N300
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RJP60V0DPM
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
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RJP60V0DPM
R07DS0669EJ0100
PRSS0003ZA-A
RJP60V0DPM
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)
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RJP60V0DPM
R07DS0669EJ0200
PRSS0003ZA-A
therma2886-9022/9044
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF22N300
100ms
22N300
3-10-14-A
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035H
Abstract: 30ETH06 IRFP250 IRFPE30
Text: SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 1.85V @ VGE = 15V IC = 22A C Applications • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies
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IRGP35B60PDPbF
IRFPE30
O-247AC
035H
30ETH06
IRFP250
IRFPE30
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SOLID STATE 01E 1 9 7 92 Optoelectronic Specifications- 37E D HARRIS SENICOND SECTOR • 4302271 00272S4 HAS b T W //.7 3 1mm Aperture Photon Coupled Interrupter Module H 22A 4,H 22A 5,H 22A 6" T he G E Solid S tate H22A Interru p ter M odule is a gallium arse
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00272S4
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H22A1 GE
Abstract: H22A1 H22A2 H22A3 H22A GE H22A1
Text: E SOLID STATE DE J 3â7SDfll D Q n ? T 0 3 □ 1 Optoelectronic Specifications T W / -73 1mm Aperture Photon Coupled Interrupter Module H 22A 1,H 22A 2,H 22A 3 The G E Solid State H22A Interrupter M odule is a gallium arse nide infrared emitting diode coupled to a silicon phototransistor in
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TW/-73
H22A1
H22A2
H22A3
H22A1 GE
H22A3
H22A
GE H22A1
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Untitled
Abstract: No abstract text available
Text: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSF9150D,
FSF9150R
-100V,
riTO-254AA
MIL-S-19500
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DP820
Abstract: TD647
Text: DP8420A/DP8421A/DP8422A S3 National Æ M S e m ic o n d u c to r DP8420A/21A /22A microCMOS Programmable 256k/1M /4M Dynamic RAM Controller/Drivers General Description Features The DP8420A/21A/22A dynamic RAM controllers provide a low cost, single chip interface between dynamic RAM and
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DP8420A/DP8421A/DP8422A
DP8420A/21A
256k/1M
DP8420A/21A/22A
32-bit
DPB420A/21A/22A
areP8420A/21A/22A.
DP820
TD647
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Untitled
Abstract: No abstract text available
Text: ¿A, May 1989 DP8520A/DP8521A/DP8522A microCMOS Programmable 256k/1M /4M Video RAM Controller/Drivers General Description Features The DP8520A/21A/22A video RAM controllers provide a low cost, single chip interface between video RAM and all 8-, 16- and 32-bit systems. The DP8520A/21A/22A gener
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DP8520A/DP8521A/DP8522A
256k/1M
DP8520A/21A/22A
32-bit
2-26A
AA32096
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TO-254AA Package
Abstract: FSF9150R4
Text: JANSR2N7403 ffî MASSES Formerly FSF9150R4 22A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 Description Features • 22A, -100V, rDS 0 N = 0.140£i • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSF9150R4
JANSR2N7403
-100V,
MIL-STD-750,
MIL-S-19500,
100ms;
500ms;
TO-254AA Package
FSF9150R4
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DS8923n
Abstract: T 8922 R3500A AM 22A
Text: IDE D § b S Q H S b iNEHORY} National Semiconductor DGbaMGl Ö | _ _ T -7 5 -4 5-05 DS8922/22A/DS8923/23A TRI-STATE RS-422 Dual Differential Line Driver and Receiver Pairs General Description The DS8922/22A and DS8923/23A are Dual Differential Line Driver and Receiver pairs. These devices are designed
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T-75-45-05
DS8922/22A/DS8923/23A
RS-422
DS8922/22A
DS8923/23A
ST506,
ST412
RS-422.
DS8923
DS8923n
T 8922
R3500A
AM 22A
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7n51
Abstract: No abstract text available
Text: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r
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FSF9150D,
FSF9150R
-100V,
MIL-STD-750,
MtL-S-19500,
100ms;
500ms;
7n51
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