22JAN2009 Search Results

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. LW COPYRIGHT , N /A RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 3 2 - , N /A . ALL RIGHTS RESERVED. REVISIONS LOC DIST DF DO P LTR DESCRIPTION N REV PER ECO—0 8 —030008 DATE DWN APVD 22JAN2009 PK RL THIS RCPT. IS DESIGNED TO CONFORM TO THE

Contextual Info: DRV603 www.ti.com. SLOS617A – JANUARY 2009 – REVISED FEBRUARY 2009 DirectPath , 3VRMS Line Driver with Adjustable Gain

Contextual Info: TMP175 TMP75 SBOS288J − JANUARY 2004 − REVISED DECEMBER 2007 Digital Temperature Sensor with Two-Wire Interface FEATURES D 27 ADDRESSES TMP175 8 ADDRESSES (TMP75) DIGITAL OUTPUT: Two-Wire Serial Interface RESOLUTION: 9- to 12-Bits, User-Selectable D

GW40N120

Abstract: GW40N120KD STGW40N120 STGW40N120KD GWA40N120KD STGWA40N120KD
Contextual Info: STGW40N120KD STGWA40N120KD 40 A, 1200 V short circuit rugged IGBT with Ultrafast diode Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode

viper28

Abstract: SDIP-10 SDIP10 VIPER28HD atx power supply transformer id VIPER28LDTR VIPER VIPER28HN VIPER28LD VIPER28LN
Contextual Info: VIPER28 Off-line high voltage converters Features • 800 V avalanche rugged power section ■ PWM operation with frequency jittering for low EMI ■ Operating frequency: – 60 kHz for L type – 115 kHz for H type SDIP10 SO16 narrow Description ■ Standby power < 50 mW at 265 VAC

GW40N120KD

Abstract: STGW40N120KD GW40N120 STGW40N120
Contextual Info: STGW40N120KD 40 A, 1200 V, short circuit rugged IGBT Features • Low on-losses ■ High current capability ■ Low gate charge ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling diode 2 3 1 Application ■ TO-247 Motor control

HY27UU088G5M

Abstract: HY27UT084G2M 29f8g08 HY27UH088G2M 29F2G08 HY27UT micron 29F2G08AA HY27UT08 HY27UG084G2M hy27uu
Contextual Info: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■

Contextual Info: ST72681 USB 2.0 high-speed Flash drive controller Not For New Design Features • USB 2.0 interface compatible with mass storage device class – Integrated USB 2.0 PHY supporting USB high speed and full speed – Suspend and Resume operations LQFP48 7x7 ■

Contextual Info: Data sheet acquired from Harris Semiconductor SCHS291 This data sheet is applicable to the CD74AC563, CD54/74AC573, and CD54/74ACT573. The CD54AC563 and CD54/74ACT563 were not acquired from Harris Semiconductor. PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2009

ULN-2075B

Abstract: ULN2065B ULN2067B ULN2068B ULN2069B ULN2075B ULN2069b st
Contextual Info: ULN2065B, ULN2067B ULN2069B, ULN2075B 80 V - 1.5 A quad Darlington switches Features • Output current to 1.5 A for each Darlington ■ Minimum breakdown 80 V ■ Sustaining voltage at least 35 V ■ Integral suppression diodes ULN2065B, ULN2067B and ULN2069B

Contextual Info: ADS1282 AD S1 282 www.ti.com . SBAS418E – SEPTEMBER 2007 – REVISED OCTOBER 2008 High-Resolution Analog-to-Digital Converter

Contextual Info: Data sheet acquired from Harris Semiconductor SCHS291 This data sheet is applicable to the CD74AC563, CD54/74AC573, and CD54/74ACT573. The CD54AC563 and CD54/74ACT563 were not acquired from Harris Semiconductor. PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2009

STW43NM60ND

Abstract: 43NM60ND
Contextual Info: STW43NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS @ TJMAX RDS(on) max ID STW43NM60ND 650 V < 0.088 Ω 35 A • The worldwide best RDS(on)*area amongst the fast recovery diode devices ■ 100% avalanche tested

Contextual Info: Data sheet acquired from Harris Semiconductor SCHS291 This data sheet is applicable to the CD74AC563, CD54/74AC573, and CD54/74ACT573. The CD54AC563 and CD54/74ACT563 were not acquired from Harris Semiconductor. PACKAGE OPTION ADDENDUM www.ti.com 11-Nov-2009

"Manufacturer ID" eMMC

Abstract: emmc JESD84-A43 eMMC memory emmc ball EXT_CSD emmc CID NAND02GAH0L emmc EXT_CSD Manufacturer ID list eMMC
Contextual Info: NAND02GRH0L NAND02GAH0L NAND08GAH0N 256-Mbyte, 1-Gbyte, 1.8 V/3.3 V supply, NAND flash memories with MultiMediaCard interface Preliminary Data Features • Packaged NAND flash memory with MultiMediaCard interface LFBGA169 ■ 256 Mbytes and 1 Gbyte of formatted data

viper28

Abstract: VIPER28HD VIPER28HN VIPER28LD VIPER28LN
Contextual Info: VIPER28 Off-line high voltage converters Features • 800 V avalanche rugged power section ■ PWM operation with frequency jittering for low EMI ■ Operating frequency: – 60 kHz for L type – 115 kHz for H type SDIP10 SO16 narrow Description ■ Standby power < 50 mW at 265 VAC

Contextual Info: STL85N6F3 N-channel 60 V, 0.0057 Ω, 19 A PowerFLAT 5x6 STripFET™ Power MOSFET Features Type VDSS STL85N6F3 60 V RDS on max ID < 0.0065 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • ■ 3 Extremely low on-resistance RDS(on) 4 PowerFLAT™ 5x6

Contextual Info: DRV603 www.ti.com. SLOS617A – JANUARY 2009 – REVISED FEBRUARY 2009 DirectPath , 3VRMS Line Driver with Adjustable Gain

CD54AC563

Abstract: CD54AC573F3A CD54ACT573F3A CD74AC563 CD74AC563E CD74AC563EE4 CD74AC573E
Contextual Info: Data sheet acquired from Harris Semiconductor SCHS291 This data sheet is applicable to the CD74AC563, CD54/74AC573, and CD54/74ACT573. The CD54AC563 and CD54/74ACT563 were not acquired from Harris Semiconductor. PACKAGE OPTION ADDENDUM www.ti.com 30-Jul-2009

VIPER28HN

Abstract: VIPER28 VIPER28LN viper28l
Contextual Info: VIPER28 Off-line high voltage converters Features • 800 V avalanche rugged power section ■ PWM operation with frequency jittering for low EMI ■ Operating frequency: – 60 kHz for L type – 115 kHz for H type ■ Standby power < 50 mW at 265 VAC ■

43NM60ND

Abstract: STW43NM60ND
Contextual Info: STW43NM60ND N-channel 600 V, 0.075 Ω, 35 A TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS @ TJMAX RDS(on) max ID STW43NM60ND 650 V < 0.088 Ω 35 A • The worldwide best RDS(on)*area amongst the fast recovery diode devices ■ 100% avalanche tested

85n3l

Abstract: 85n3lh5 STD85N3LH5 85N3 STU85N3LH5 STP85N3LH5 47k uf 240
Contextual Info: STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET V Power MOSFET Features Type VDSS RDS on max ID STD85N3LH5 30 V < 0.005 Ω 80 A STP85N3LH5 30 V < 0.0054 Ω 80 A STU85N3LH5 30 V < 0.0054 Ω 80 A • RDS(on) * Qg industry benchmark

tyco PA66 GF 25

Abstract: Dsub 15P corrugated box spec tyco 15P Housing Dsub 15P tyco PA66 GF 10 Tyco PA66 PA66 GF 25 tyco 94v0 ys g20060
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. AUG .2 0 0 6 . LOC ALL RIGHTS RESERVED. REVISIONS DW LTR C1 DESCRIPTION DATE 24FEB09 REVISED ECR— 0 9 — 0 0 4 37 2 DWN APVD BH WK NOTES: D D 1. MATERIAL:

85n3l

Abstract: 85N3 STD85N3LH5 85n3lh5 47k uf 240 st 85n3lh5 STP85N3LH5 STU85N3LH5 ST SMD 236 DIODE order codes B4 diode
Contextual Info: STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET V Power MOSFET Features Type VDSS RDS on max. ID 3 STD85N3LH5 STP85N3LH5 3 1 30 V < 0.005 Ω 80 A STU85N3LH5 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)