Untitled
Abstract: No abstract text available
Text: RF-13 Rev 22JAN14 MMCX7–P–C–HF–ST–CA3 MMCX7–J–C–GF–ST–CA3 MMCX7–P–C–GF–RA–CA3 MMCX7-CA SERIES 75Ω MICRO-MINI COMPONENTS SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com?MMCX7-CA Shell Material:
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RF-13
22JAN14)
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Untitled
Abstract: No abstract text available
Text: D ECO-12-017358 22JAN13 CWR D D OBSOLETE OBSOLETE D D D
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ECO-12-017358
22JAN13
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Untitled
Abstract: No abstract text available
Text: G1 790319-9 brass SEE ECR-14-000953 22JAN14 LP TD Tin plated 1
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ECR-14-000953
22JAN14
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VS-8E2TX06-E
Abstract: No abstract text available
Text: VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • • • • • • • • • • 2L TO-220 FULL-PAK Base cathode 2 1 Cathode 3 Anode 2 Anode 1 Cathode VS-8E2TX06 DESCRIPTION/APPLICATIONS
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VS-8E2TX06-E,
VS-8E2TX06-M,
VS-8E2TX06FP-E
2002/95/EC
O-220AC
O-220
2011/65/EU
2002/95/EC.
2011/65/EU.
VS-8E2TX06-E
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Untitled
Abstract: No abstract text available
Text: Data Sheet Customer： Product : Multilayer Chip Varistor - VA Series Size: 0402/0405/0508/0603/0612/0805/1206/1210/1812 /2220 Issued Date: 22-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH
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22-Jan-11
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Untitled
Abstract: No abstract text available
Text: V12W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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V12W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V6WL45C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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V6WL45C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: V6WM100C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.56 V at IF = 3 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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V6WM100C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: GOLD QUALITY CLASS: 3 AS PER CECC 75 301-802 PITCH: 2.54MM A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 125°C
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UL94-V0
E323964
612-S
19-MAR-13
22-JAN-13
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V10WM
Abstract: V10WM100
Text: V10WM100 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.48 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-252 D-PAK • Ideal for automated placement • Low forward voltage drop, low power losses
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V10WM100
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V10WM
V10WM100
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N2A-XX-S153R-35B
Abstract: No abstract text available
Text: 90° Patterns - Dual Grid Micro-Measurements Transducer-Class Strain Gages GAGE PATTERN Actual size shown. Enlarged when necessary for definition. inch DIMENSIONS RES. IN OHMS GAGE DESIGNATION See Note 1 STANDARD CREEP CODE millimeter ENCAPSULATION OPTION
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N2A-XX-S063Q-350
N2A-XX-S167R-350
N2K-XX-S015T-350/DP
N2K-XX-S184T-10C/DP
TK-XX-S015T-350/DP
TK-XX-S184T-10C/DP
22-Jan-10
N2A-XX-S153R-35B
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Untitled
Abstract: No abstract text available
Text: TDSL31. Vishay Semiconductors Low Current 10 mm Seven Segment Display FEATURES • Low power consumption • Suitable for DC and multiplex operation • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized
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TDSL31.
2002/95/EC
2002/96/EC
TDSL31
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-8E2TH06-E, VS-8E2TH06-M, VS-8E2TH06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt FEATURES 2L TO-220AC • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation
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VS-8E2TH06-E,
VS-8E2TH06-M,
VS-8E2TH06FP-E
2002/95/EC
O-220AC
O-220
VS-8E2TH06
VS-8E2TH06FP
11-Mar-11
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VS-ETX1506FP
Abstract: No abstract text available
Text: VS-ETX1506-M3, VS-ETX1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast recovery time, extremely low Qrr • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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VS-ETX1506-M3,
VS-ETX1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-ETX1506FP
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Untitled
Abstract: No abstract text available
Text: VS-ETU3006-M3, VS-ETU3006FP-M3 Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt FEATURES • Low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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VS-ETU3006-M3,
VS-ETU3006FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
VS-ETU3006-M3
11-Mar-11
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MAL216099
Abstract: No abstract text available
Text: 160 CLA www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , High Temperature, Low Impedance FEATURES • Useful life for 2000 h at 150 °C • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free
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J-STD-020
AEC-Q200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
MAL216099
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Untitled
Abstract: No abstract text available
Text: UDD32C24L01 DESCRIPTION The series are an ultra low capacitance TVS array designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and trans-mission lines from overvoltage caused by ESD electrostatic discharge ,
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UDD32C24L01
22-Jan-14
OD-323
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Untitled
Abstract: No abstract text available
Text: VS-ETH1506-M3, VS-ETH1506FP-M3 Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES • Hyperfast soft recovery time • Low forward voltage drop • 175 °C operating junction temperature • Low leakage current 2L TO-220AC • Fully isolated package VINS = 2500 VRMS
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VS-ETH1506-M3,
VS-ETH1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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Untitled
Abstract: No abstract text available
Text: VS-ETL1506-M3, VS-ETL1506FP-M3 Vishay Semiconductors Ultrafast Rectifier, 15 A FRED Pt FEATURES • State of the art low forward voltage drop • Ultrafast soft recovery time • 175 °C operating junction temperature • Low leakage current 2L TO-220AC
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VS-ETL1506-M3,
VS-ETL1506FP-M3
O-220AC
O-220
2002/95/EC
JEDEC-JESD47
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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TDSl3150
Abstract: tdsl3150 m TDSL3160
Text: TDSL31. Vishay Semiconductors Low Current 10 mm Seven Segment Display FEATURES • Low power consumption • Suitable for DC and multiplex operation • Evenly lighted segments • Grey package surface • Untinted segments • Luminous intensity categorized
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TDSL31.
2002/95/EC
2002/96/EC
TDSL31
18-Jul-08
TDSl3150
tdsl3150 m
TDSL3160
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Untitled
Abstract: No abstract text available
Text: V20W60C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.40 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Ideal for automated placement TO-252 D-PAK • Low forward voltage drop, low power losses
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V20W60C
O-252
J-STD-020,
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: E in 3 u E c n m % *s I i 0IBUJA99 EN PROYfCCIONES F1 DATE DESCRIPTION rev REVISED PER ECO-10-000445 22JAN10 SEE ECR-11-006271 G 25MAR11 DW APPV KK HMR JS LB Oï co SECCION B - B o en .M s 3 X ¡4 1 :Ü W ï f f iK C S ï ^ ^ M 3 # fi i . "' s;í ’íí:í-?•/■k^kk:kfk;kfk:;-^
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0IBUJA99
ECO-10-000445
22JAN10
ECR-11-006271
25MAR11
9903n
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LR7189
Abstract: E13288
Text: 4 TH IS DRAWING COPYRIGHT IS 3 U N P U B L IS H E D . RELEASED BY 1TCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N 2 -, - R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. G D E S C R IP TIO N RE V DIMPLES R 15.87 [R.625] MAX WASHER PER ECR 10-000722 22JAN10
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22JAN10
LR7189
B-152,
E13288
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Untitled
Abstract: No abstract text available
Text: 4 3 RELEASED C O P Y R IG H T FO R ALL By - 2 P U B L IC A T IO N R IG H TS REVISIO N S RESERVED. R D E S C R IP T IO N LTR D1 ECR-1 0 - 0 0 0 2 6 2 D2 ECR-1 0 - 0 2 6 5 3 7 DATE 1 9APR201 0 SRE PCH KK 22JAN1 D DIM A + 0 . 1 0 OBSOLETE 2.00 TE LOGO A PVD DWN
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9APR201
22JAN1
05JUL2005
X220mm
660mm
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