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    onsemi FAN3227TMX

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey FAN3227TMX Digi-Reel 22,923 1
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    FAN3227TMX Cut Tape 22,923 1
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    FAN3227TMX Reel 22,500 2,500
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    Avnet Americas FAN3227TMX Reel 0 Weeks, 2 Days 878
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    FAN3227TMX Ammo Pack 53 Weeks, 5 Days 1
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    FAN3227TMX Reel 20 Weeks 2,500
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    Mouser Electronics FAN3227TMX 60,750
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    Newark FAN3227TMX Cut Tape 4,040 1
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    FAN3227TMX Reel 2,500
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    Rochester Electronics FAN3227TMX 5,000 1
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    Richardson RFPD FAN3227TMX 2,500
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    Avnet Asia FAN3227TMX 20 Weeks 2,500
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    EBV Elektronik FAN3227TMX 5,000 22 Weeks 2,500
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    Master Electronics FAN3227TMX 7,500
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    New Advantage Corporation FAN3227TMX 10,000 1
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    Wuhan P&S FAN3227TMX 2,320 1
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    onsemi FAN3227TMX-F085

    IC GATE DRVR LOW-SIDE 8SOIC
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    DigiKey FAN3227TMX-F085 Digi-Reel 17,435 1
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    FAN3227TMX-F085 Cut Tape 17,435 1
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    FAN3227TMX-F085 Reel 15,000 2,500
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    Mouser Electronics FAN3227TMX-F085 1,573
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    Newark FAN3227TMX-F085 Reel 2,500
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    Richardson RFPD FAN3227TMX-F085 2,500
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    Avnet Silica FAN3227TMX-F085 32 Weeks 2,500
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    EBV Elektronik FAN3227TMX-F085 2,500 33 Weeks 2,500
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    New Advantage Corporation FAN3227TMX-F085 2,500 1
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    onsemi FAN3227TMPX

    IC GATE DRVR LOW-SIDE 8MLP
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    DigiKey FAN3227TMPX Digi-Reel 2,789 1
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    FAN3227TMPX Cut Tape 2,789 1
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    Avnet Americas FAN3227TMPX Reel 20 Weeks 3,000
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    Mouser Electronics FAN3227TMPX
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    Newark FAN3227TMPX Cut Tape 2,445 1
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    FAN3227TMPX Reel 3,000
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    Ameya Holding Limited FAN3227TMPX 12,008
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    Richardson RFPD FAN3227TMPX 3,000
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    Avnet Silica FAN3227TMPX 21 Weeks 3,000
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    EBV Elektronik FAN3227TMPX 22 Weeks 3,000
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    Master Electronics FAN3227TMPX
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    New Advantage Corporation FAN3227TMPX 24,000 1
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    Wuhan P&S FAN3227TMPX 15,000 1
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    Cornell Dubilier Electronics Inc 227TMA050M

    CAP ALUM 220UF 20% 50V AXIAL TH
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    Cornell Dubilier Electronics Inc 227TMA250M

    CAP ALUM 220UF 20% 250V AXIAL TH
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    227TM Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    227TMA035M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 35V AXIAL Original PDF
    227TMA050M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 50V THRU HOLE Original PDF
    227TMA100M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 100V AXIAL Original PDF
    227TMA160M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 160V AXIAL Original PDF
    227TMA200M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 200V AXIAL Original PDF
    227TMA250M Illinois Capacitor Capacitors - Aluminum Electrolytic Capacitors - CAP ALUM 220UF 20% 250V AXIAL Original PDF

    227TM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200n60

    Abstract: robot control
    Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 200N60B 160ns 227TM 728B1 200n60 robot control

    Untitled

    Abstract: No abstract text available
    Text: IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS


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    PDF 73N30Q 227TM 728B1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


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    PDF 200N60B 160ns 227TM IXGN200N60B 405B2

    73N30Q

    Abstract: No abstract text available
    Text: IXFE 73N30Q HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on = 300 V = 66 A Ω = 46 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS


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    PDF 73N30Q 227TM 728B1 73N30Q

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 55N50 50N50 227TM IXFN55N50 IXFE55N50:

    200n60

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


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    PDF 200N60B 227TM 25crease 728B1 200n60

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS IXFE 44N50Q IXFE 48N50Q ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


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    PDF 44N50Q 48N50Q 227TM 728B1 123B1 728B1

    50n50

    Abstract: IXFN55N50 IXFE50N50 IXFE55N50 55n50
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 55N50 50N50 227TM IXFN55N50 IXFE55N50: 50n50 IXFE50N50 IXFE55N50 55n50

    200N60B

    Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
    Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient


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    PDF 200N60B 160ns 227TM IXGN200N60B 405B2 200N60B 200n60 SOT227B package SOT227B 123B16

    48N50Q

    Abstract: IXFN48N50Q 44N50
    Text: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on 500 V 39 A 120 mΩ Ω Ω 500 V 41 A 110 mΩ IXFE 44N50Q IXFE 48N50Q trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions


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    PDF 44N50Q 48N50Q 227TM IXFN48N50Q 44N50Q: 48N50Q: 48N50Q 44N50

    50N50

    Abstract: IXFE50N50 IXFE55N50 IXFN55N50
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


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    PDF 55N50 50N50 227TM 3000VSD IXFN55N50 IXFE55N50: 50N50 IXFE50N50 IXFE55N50

    36N100

    Abstract: IXFE36N100 IXFE34N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 227TM (IXFE) S VDSS VDGR TJ = 25°C to 150°C


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    PDF 36N100 34N100 34N100 IXFN36N100 IXFE36N100: IXFE36N100 IXFE34N100

    107TMA050M

    Abstract: 106TMA063M k 4145 226TMA250M 229TMA6R3M
    Text: +105°C Standard Axial Lead Aluminum Electrolytic Capacitors TMA F o r l o n g l i f e / E x t e n d e d Te m p e r a t u r e A p p l i c a t i o n s FEATURES • High ripple current ratings ■ Wide capacitance range: 0.47 µF to 22,000 µF ■ Voltage range: 6.3 WVDC to 450 WVDC


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    PDF 120Hz, 109TMA025M 22x50 108TMA100M 22x40 159TMA6R3M 18x40 228TMA010M 159TMA010M 107TMA050M 106TMA063M k 4145 226TMA250M 229TMA6R3M

    buck-boost chopper

    Abstract: buck pfc sot 227b diode fast 48N50Q IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 IXFK48N50
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol


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    PDF IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 227TM 44N50Q 48N50Q IXFK48N50Q buck-boost chopper buck pfc sot 227b diode fast 48N50Q IXFK48N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 VDSS ID25 RDS on = 500 V = 72 A Ω = 55 mΩ D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    PDF 80N50 227TM 728B1

    80n50

    Abstract: 80N50 MOSFET
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 80N50 RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 80N50 227TM 728B1 80n50 80N50 MOSFET

    switch reluctance motor

    Abstract: A41A
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 Preliminary data sheet 2 2 4 1 1 Symbol


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    PDF IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 44N50Q 48N50Q 48N50Q 227TM IXFN48N50U2/U3 switch reluctance motor A41A

    24N100

    Abstract: 23N100
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFE 24N100 1000 V 22 A IXFE 23N100 1000 V 21 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF 24N100 23N100 227TM

    36N100

    Abstract: 34n100 ixfn36n100 IXFE34N100 IXFE36N100 NS455
    Text: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.24 Ω 0.28 Ω IXFE 36N100 1000 V 33 A IXFE 34N100 1000 V 30 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ


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    PDF 36N100 34N100 227TM IXFN36N100 IXFE36N100: IXFE34N100: 728B1 IXFE34N100 IXFE36N100 NS455

    IXFK48N50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFE44N50QD2 IXFE44N50QD3 500 V IXFE48N50QD2 IXFE48N50QD3 500 V Buck & Boost Configurations for PFC & Motor Control Circuits ID cont RDS(on) trr 0.12 Ω 35 ns 0.11 Ω 35 ns 39 A 41A 3 3 4 2 2 4 D2 Symbol Test Conditions D3


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    PDF IXFE44N50QD2 IXFE44N50QD3 IXFE48N50QD2 IXFE48N50QD3 227TM 44N50Q 48N50Q IXFK48N50Q IXFK48N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary Data S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 900


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    PDF 39N90 IXFN39N90 728B1

    IXFN80N50

    Abstract: No abstract text available
    Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM Power MOSFETs Single Die MOSFET IXFE 39N90 RDS on t D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    PDF 39N90 IXFN80N50 728B1

    Untitled

    Abstract: No abstract text available
    Text: Extended Life - High voltage FEATURES Filtering – Bypass – Coupling – Blocking APPLICATIONS Operating Temperature Range Capacitance Tolerance WVDC Surge voltage SVDC WVDC Dissipation Tan δ Factor -40°C to +105°C 6.3 to 400 WVDC -25°C to +105°C (450 WVDC)


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    PDF 1000uF 1000uF MA016M 22x41 478TMA016M 16x31 109TMA025M 22x51 478TMA025M 18x41

    Untitled

    Abstract: No abstract text available
    Text: TMA +105°C General Purpose Axial Lead Aluminum Electrolytic Capacitors Features •  Standard case sizes Multiple case sizes  Lead free leads   Filtering De-coupling Applications   Bypass Coupling Specifications Operating Temperature Range


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    PDF 109TMA025M 22x51 478TMA025M 18x41 159TMA6R3M 478TMA035M 22x41 159TMA010M