225L Search Results

SUD06N10-225L-E3

Abstract: SUD06N10-225L
Contextual Info: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)

Contextual Info: PART NUMBER: 225LCA050M LO W LEAKAGE CURRENT SURFACE MOUNT CHIP ALUMINUM ELECTROLYTIC CAPACITORS Parts are RoHS com pliant Date code w hen parts became RoHS: 15 £ ELECTRICAL SPECIFICATIONS C apacitance: 2.2 uF T ole ra n ce: -20 % . +20 % Dissipation Factor: 0.1 Max at 120 Hz and 20°C

Contextual Info: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)

Contextual Info: SUD06N10-225L-GE3 Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () ID (A) 0.200 at VGS = 10 V 6.5 0.225 at VGS = 4.5 V 6 Qg (Typ) 2.7 • TrenchFET Power MOSFETs • Material categorization: For definitions of compliance please see

SUU06N10-225L

Contextual Info: SUU06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET

SUD06N10-225L

Contextual Info: SPICE Device Model SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUU06N10-225L

Abstract: 40T10
Contextual Info: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SUD06N10-225L

Contextual Info: SPICE Device Model SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175°C MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

06N10

Abstract: 45n05 45N05- 20L sud*45N05-20L dpak code marking t vishay siliconix code marking SQD45N05-20L siliconix marking code VISHAY MARKING CODE
Contextual Info: Part Marking Information Vishay Siliconix DEVICES: TO-252 DPAK TO251 TO-252 TO-251 (Q)45N05- (Q)06N10- 20L 225L LL LL TYWF TYWF Example Part Numbers In Red Type Q = Automotive, for example for SQD45N05-20L. No character otherwise, for example for SUD45N05-20L

Contextual Info: SPICE Device Model SUD06N10-225L www.vishay.com Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)

SUD06N10-225L

Contextual Info: SUD06N10-225L New Product Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD06N10-225L S N-Channel MOSFET

SUD06N10-225L

Contextual Info: SUD06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 Qg (Typ) 27 2.7 TO-252 D G Drain Connected to Tab G D S Top View Order Number: S SUD06N10-225L SUD06N10-225L—E3 (lLead (Pb)-Free)

SUU06N10-225L

Contextual Info: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

4406 mosfet

Abstract: AN609 SUD06N10-225L
Contextual Info: SUD06N10-225L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

71254

Abstract: SUU06N10-225L
Contextual Info: SUU06N10-225L Vishay Siliconix N-Channel 100-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.200 @ VGS = 10 V 6.5 0.225 @ VGS = 4.5 V 6.0 TO-251 D G and DRAIN-TAB G D S Top View S Order Number: SUU06N10-225L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

LMZ14203HTZ

Abstract: LMZ14203H
Contextual Info: LMZ14203H LMZ14203H 3A SIMPLE SWITCHER Power Module for High Output Voltage Literature Number: SNVS692B LMZ14203H 3A SIMPLE SWITCHER Power Module for High Output Voltage Easy to use 7 pin package Performance Benefits • ■ ■ ■ High efficiency reduces system heat generation

Contextual Info: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitors F o r all a p p l i c a t i o n s i n c l u d i n g s w i t c h i n g p o w e r s u p p l i e s FEATURES • Highest Reliability, up to 5000 hours ■ Voltage range: 6.3WVDC to 63 WVDC

STM CL-80

Abstract: acp ca14 AD10 AD14 TXC-05551
Contextual Info: SARA-2 ATM Cell Processing 1C Device TXC-05551 DATA SHEET PRODUCT PREVIEW DESCRIPTION Test Access Port SARA-2 is a single-chip solution using feature/ application-specific microcode that performs complete segmentation and reassembly SAR for implementing

ADSP-21000

Abstract: ADSP-21020 ADSP-21060 ADSP-21062 ADSP-21062L tddg
Contextual Info: a ADSP-2106x SHARC DSP Microcomputer Family ADSP-21062/ADSP-21062L SUMMARY High Performance Signal Processor for Communications, Graphics and Imaging Applications Super Harvard Architecture Four Independent Buses for Dual Data Fetch, Instruction Fetch and Nonintrusive I/O

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

QD13

Contextual Info: I N T E GR AT ED DEVICE. 4 Û ES 77 1 00137=17 SÛ2 • IDT böE D CMOS SyncFlFO 256 X 18, 512 X 18, 1024 x 18, 2048 18 and 409 6 x 18 FEATURES: • • • • • 256 x 18-bit org a n iz a tio n array 7 2205LB 512 x 18-bit org a n iz a tio n array (7 2 2 1 5LB)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 225L Features 2 Amp Schottky Rectifier 25 Volts • Schottky Barrier Rectifier • Guard Ring Protection

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 225L Features • • • • • • • Lead Free Finish/Rohs Compliant Note1 ("P"Suffix designates