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API Delevan 4922-51H FIXED IND 15MH 61MA 105 OHM SMD
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DigiKey	4922-51H	Reel			800	1 - 10 - 100 - 1000 $7.96625 10000 $7.96625	Buy Now
Mouser Electronics	4922-51H					1 - 10 - 100 - 1000 $8.12 10000 $8.12	Get Quote
Brady Worldwide Inc 7225-1HV-PK B946 7225-1HV BK/YW 5PK
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DigiKey	7225-1HV-PK	Bulk			1	1 $35.27 10 $35.27 100 $35.27 1000 $35.27 10000 $35.27	Buy Now
RS	7225-1HV-PK	Package		4 Weeks	1	1 $32.89 10 $32.89 100 $32.89 1000 $32.89 10000 $32.89	Get Quote
Vishay Sprague M39003-01-2251H CAP TANT 330UF 10% 6V AXIAL
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DigiKey	M39003-01-2251H	Bulk			20	1 - 10 - 100 $16.197 1000 $16.197 10000 $16.197	Buy Now
Siemens 3RA22251HD240AP6 STARTER REV FB S0 5.5-8A 240VAC
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DigiKey	3RA22251HD240AP6	Box			1	1 $958.54 10 $958.54 100 $958.54 1000 $958.54 10000 $958.54	Buy Now
Mouser Electronics	3RA22251HD240AP6					1 $948.63 10 $948.63 100 $948.63 1000 $948.63 10000 $948.63	Get Quote
RS	3RA22251HD240AP6	Bulk			1	1 $1202.13 10 $1142.02 100 $1142.02 1000 $1142.02 10000 $1142.02	Get Quote
Siemens 3RA22251HD240AK6 STARTER REV FB S0 5.5-8A 120VAC
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DigiKey	3RA22251HD240AK6	Box			1	1 $958.54 10 $958.54 100 $958.54 1000 $958.54 10000 $958.54	Buy Now
Mouser Electronics	3RA22251HD240AK6					1 $948.63 10 $948.63 100 $948.63 1000 $948.63 10000 $948.63	Get Quote
RS	3RA22251HD240AK6	Bulk			1	1 $1202.13 10 $1142.02 100 $1142.02 1000 $1142.02 10000 $1142.02	Get Quote

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2251H Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
555H Abstract: MX29F200B MX29F200T Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 555H MX29F200B MX29F200T
Untitled Abstract: No abstract text available Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte DEC/20/1999 PM0549
29F200T Abstract: No abstract text available Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001 29F200T
FPT-48P-M20 Abstract: DS05 FPT-48P-M19 MBM29F200BA Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–20813–2E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 MBM29F200TA/MBM29F200BA • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands	Original	PDF	8/128K MBM29F200TA/MBM29F200BA 48-pin 44-pin P9603 FPT-48P-M20 DS05 FPT-48P-M19 MBM29F200BA
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-4E FLASH MEMORY CMOS 2M 256K x 8/128K × 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 • GENERAL DESCRIPTION The MBM29F200TC/BC is a 2M-bit, 5.0 V-only Flash memory organized as 256K bytes of 8 bits each or 128K	Original	PDF	DS05-20867-4E 8/128K 9F200TC-55/-70/-90/MBM29F200BC-55/-70/-90 MBM29F200TC/BC 48-pin 44-pin F0306
MX29F200C Abstract: PM1250 MX29F200CT Q0-Q15 Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture	Original	PDF	MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA PM1250 MX29F200CT Q0-Q15
Macronix Abstract: architecture in 4289 MX29F400C Macronix International am29f400b 2257h Text: APPLICATION NOTE Migrating to the Macronix MX29F200C & MX29F400C Flash Families from Spansion Am29F200B & Am29F400B Memory Devices. Contents Introduction. 2	Original	PDF	MX29F200C MX29F400C Am29F200B Am29F400B Macronix architecture in 4289 Macronix International 2257h
MX29F200CT Abstract: Q0-Q15 MX29F200CTTI-70G Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture	Original	PDF	MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA MX29F200CT Q0-Q15 MX29F200CTTI-70G
HY29F200 Abstract: HY29F200B HY29F200T Text: HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements · High performance - 70 ns access time · Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and	Original	PDF	HY29F200T/B 48-Pin HY29F200 16-Bit) G-70I, T-70I R-70I G-70E, T-70E, R-70E HY29F200B HY29F200T
Untitled Abstract: No abstract text available Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549
Untitled Abstract: No abstract text available Text: MX29F200C T/B 2M-BIT [256K x 8 / 128K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Single Power Supply Operation - 4.5 to 5.5 volt for read, erase, and program operations • 262,144 x 8 / 131,072 x 16 switchable • Boot Sector Architecture	Original	PDF	MX29F200C 16K-Byte 32K-Byte 64K-Byte 100mA
555H Abstract: MX29F200B MX29F200T Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte PM0549 JUN/15/2001 555H MX29F200B MX29F200T
MBM29F200BC-70PFTN Abstract: DS05 FPT-48P-M19 MBM29F200BC Text: スパンションフラッシュメモリデータシート 2003 年 9 月本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンションブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され	Original	PDF	8/128K MBM29F200TC/200BC-55/70/90 MBM29F200TC/BC MBM29F200TC/BC-55 MBM29F200TC/BC-90 MBM29F200TC/BC-70 F48030S-c-6-7 MBM29F200BC-70PFTN DS05 FPT-48P-M19 MBM29F200BC
Untitled Abstract: No abstract text available Text: MX29F200T/B 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5.0V±10% for read, erase and write operation 131072x16/262144x8 switchable Fast access time: 55/70/90/120ns Low power consumption - 40mA maximum active current@5MHz	Original	PDF	MX29F200T/B 256Kx8/128Kx16] 131072x16/262144x8 55/70/90/120ns 7us/12us 16K-Bytex1, 32K-Bytex1, 64K-Byte JUN/15/2001 NOV/12/2001

diode MARKING CODE A9 Abstract: No abstract text available Text: MBM29F200TC-55/-70/-90 MBM29F200BC-55/-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.	Original	PDF	MBM29F200TC-55/-70/-90 MBM29F200BC-55/-70/-90 F0306 diode MARKING CODE A9
Untitled Abstract: No abstract text available Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements	OCR Scan	PDF	Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200
Untitled Abstract: No abstract text available Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements	OCR Scan	PDF	Am29F200AT/Am29F200AB 44-pin 48-pin
2216H Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.	OCR Scan	PDF	TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F
Untitled Abstract: No abstract text available Text: Preliminary information •■ AS29F200 I I 5V 256KX8/128Kx 16 CMOS Flash EEPROM Features • Organization: 256Kx8 or 128K xl6 • Sector architecture - One 16K; two 8K; one 32K; and three 64K byte sectors - Boot code sector architecture—T top or B (bottom)	OCR Scan	PDF	AS29F200 256KX8/128Kx 256Kx8 AS29F200B-70TC AS29F200B-70TI AS29F200T-70TC AS29F200T-70TI AS29F200B-70SC AS29F200B-70SI AS29F200T-70SC
Untitled Abstract: No abstract text available Text: H i j j h P i - r f o r m a i K <.• L BB SV C M O S I la s h 1 I P R O M 2 A S 2 l> I ' 2 0 0 A S6K X 8/IZ8K x I6 6 K x 8 / I 2 8 K x 1 6 C M O S Jf /.isii I'I P K O M Preliminary information Features • Organization: 256KX8 or 128KX16 • Sector architecture	OCR Scan	PDF	256KX8 128KX16 e-120TC -120TI S29F200B -55SC S29F200B-70SC -90SC
Untitled Abstract: No abstract text available Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands	OCR Scan	PDF	HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I
29F200 Abstract: 29F200 amd 29F200T Text: a P R E L IM IN A R Y Am29F200T/Am29F200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% write and erase, read ■ — M inimizes system level power requirements	OCR Scan	PDF	Am29F200T/Am29F200B 8-Bit/131 16-Bit) 29F200 29F200 amd 29F200T
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20867-3E FLASH MEMORY B lB 2M 256K X 8/128K x 16 BIT MBM29F200TC-55/-70/-90/MBM29F200BC-55/-70A90	OCR Scan	PDF	DS05-20867-3E 8/128K 29F200TC-55/-70/-90/MBM29F200BC-55/-70A90 48-pin 44-pin F4S029S-2C-2 MBM29 -90/M BM29F200 C-55/-70/-90/M
PL 2305H Abstract: MC1110 Text: TO SH IB A TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package. Listed below are the features.	OCR Scan	PDF	16-Bit TMP95CU54A TMP95CU54AF TMP95CU54A 100-pin 900/H TLCS-90/900 PL 2305H MC1110

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2251H Search Results

2251H Price and Stock

API Delevan 4922-51H

Brady Worldwide Inc 7225-1HV-PK

Vishay Sprague M39003-01-2251H

Siemens 3RA22251HD240AP6

Siemens 3RA22251HD240AK6

2251H Datasheets Context Search

555H

Untitled

29F200T

FPT-48P-M20

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MX29F200C

Macronix

MX29F200CT

HY29F200

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555H

MBM29F200BC-70PFTN

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diode MARKING CODE A9

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2216H

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29F200

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PL 2305H