527 225
Abstract: 527-225
Text: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF .750 (19.1) Max M N 1.740 (44.2 ) Max NC NF T .900 (22.9) 2.090 (53.1) Max
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MIL-C--38999
527 225
527-225
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Cannon connectors
Abstract: electroless nickel 225 nf MIL-C-38999 MIL-C-3899
Text: ARINC Series 400 Cannon 527-225 EMI/RFI 45° Split Backshell for Cannon SGA3 Connector TABLE II: FINISH OPTIONS 527 225 NF Product Series Symbol B C* G* J Basic Number Finish (Table I) LF M N .750 (19.1) Max NC NF 1.740 (44.2) Max T U* ZN .900 (22.9) 2.090 (53.1) Max
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MIL-C--38999
Cannon connectors
electroless nickel
225 nf
MIL-C-38999
MIL-C-3899
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BSM 225
Abstract: bsm225 BSM225A EUPEC TD 56 N 08
Text: BSM 225 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 225 A 200 V 120 A 0.0175 Ω HB MOS 1 C67076-S1103-A20
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C67076-S1103-A20
Oct-30-1997
BSM 225
bsm225
BSM225A
EUPEC TD 56 N 08
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C9014
Abstract: transistor c9014 C9014 Transistor data sheet transistor C9014 VP05 c9014 equivalent UTC7050 C9014 data sheet c9014 datasheet C9014 transistor datasheet
Text: SA1021 SA1021 76kHz FLL RC SOP-16-225-1.27 MUX 50kHz SA1021 SOP-16-225-1.27 * * * / * * -* * * * * * 2.0 http: www.silan.com.cn 2004.07.31 SA1021 12 13 11 RF 5 7 10 MIX AMP VCO MUTE OSC AF 14 CLIM AMP 16 15 2 e.m.f. I4 Vp=3V Frf - 6 STAB 1 3 Vp= V4-3 -
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SA1021
76kHz
OP-16-225-1
50kHz
UTC7040
220nF
C9014
transistor c9014
C9014 Transistor
data sheet transistor C9014
VP05
c9014 equivalent
UTC7050
C9014 data sheet
c9014 datasheet
C9014 transistor datasheet
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Untitled
Abstract: No abstract text available
Text: SEMiX71GD12T4s Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 175°C 1200 V Tc = 25°C 115 A Tc = 80°C 88 A 225 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25°C 97 A Tc = 80°C 73 A 225 A -40 . 175 °C ICRM = 3xICnom VGES
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SEMiX71GD12T4s
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GS8161Z18AT-300
Abstract: gs816
Text: Preliminary GS8161Z18/36AT-300/275/250/225/200 18Mb Pipelined and Flow Through Synchronous NBT SRAM Flow Through 2-1-1-1 1.8 V 2.5 V 300 345 300 340 275 320 275 315 250 295 250 285 230 265 225 260 mA mA mA mA tKQ tCycle 5.0 5.0 5.25 5.25 5.5 5.5 6.0 6.0 6.5
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GS8161Z18/36AT-300/275/250/225/200
GS8161Z18/36AT
100-pin
8161Z18A
GS8161Z18AT-300
gs816
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diagram LG LCD TV circuits
Abstract: TNY275PN 32 inch LCD TV SCHEMATIC plc810 3m 1350f-1 diagram power supply LG 32 in LCD TV circuits K1058 lg lcd tv POWER SUPPLY SCHEMATIC orient 817A CS330060
Text: Title Reference Design Report for a 225 W 286 W Peak Power Factor Corrected LLC Power Supply Using HiperPLC (PLC810PG) 90 VAC to 265 VAC Input Specification 225 W (286 W Peak) Total Output Power 5 VSB at 0.5 W 5 V at 9.5 W 12 V at 48 W (60 W Peak) 24 V at 168 W (216 W Peak)
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PLC810PG)
RDR-189
diagram LG LCD TV circuits
TNY275PN
32 inch LCD TV SCHEMATIC
plc810
3m 1350f-1
diagram power supply LG 32 in LCD TV circuits
K1058
lg lcd tv POWER SUPPLY SCHEMATIC
orient 817A
CS330060
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300V switching transistor
Abstract: CM150RL-12NF
Text: Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com CM150RL-12NF Six IGBTMOD + Brake NF-Series Module 150 Amperes/600 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 225 12 150 11 75 10 8 2 4
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CM150RL-12NF
Amperes/600
300V switching transistor
CM150RL-12NF
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Amplifier - ZHL-1HLD Amplifier print this page ZHL-1HLD Frequency MHz fL - fU GAIN, dB Min. Max. Flatness Maximum Power, dBm Dynamic Range VSWR Lw U Input no damage NF dB Typ. 225-400 23 ±1.00 +27.00 +27.00 +10.00 2.50
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FS225R17KE3
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FS225R17KE3
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FS225R17KE3
Abstract: 2750A
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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FS225R17KE3
2750A
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FS225R17KE3
Abstract: 2750A
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FS 225 R17 KE3 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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M7A transistor
Abstract: transistor M7A MARKING m7a M7A MARKING SOT-23 10 M7A MMBT2907A
Text: MMBT2907A PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 60 Volts 225 mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -60V Collector current IC = -600mA In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA
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MMBT2907A
-600mA
2002/95/EC
OT-23
MIL-STD-750
10-Temperature
M7A transistor
transistor M7A
MARKING m7a
M7A MARKING SOT-23
10 M7A
MMBT2907A
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2N6439
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439
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MIL-C-5541 CLASS 3
Abstract: 6061-T5 180 3dB coupler JCC-1009
Text: MI DRG.NO. JCC-1009A REV. JC C -1 0 0 9 ? nn COUPLER, 90° 225 - 520 MHz. 450W FILE: COUPOUT ELECTRICAL SPECIFICATIONS: FREQUENCY: 225 - 520 MHz. INSERTION LOSS: <0.25dB VSWR: <1.25: 1 ISOLATION: [TYP.] > 20B AMPLITUDE BALANCE: ±0.70dB PHASE BALANCE: POWER:
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JCC-1009
JCC-1009SM
B00NT0N.
JCC-1009A
JCC-1009
6061-T5
MIL-C-5541,
MIL-C-5541 CLASS 3
6061-T5
180 3dB coupler
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pfe 225
Abstract: rifa pfe
Text: PFE 225 Precision Capacitor PFE 225 • • High capacitance density. High stability. • • MU AH AG approval. French standard CPS 82. • • High reliability. High test voltage. • CECC 30901-001. Typical applications Construction This capacitor is made in 7.5 mm module
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2N6439
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by 2N6439/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor 2N6439 . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
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2N6439/D
2N6439
2N6439
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PN544
Abstract: TI59 national 2N3859 2N2712 2N915 MPQ2222 MPQ6700 T1890 TN2219 PN101
Text: This NPN Transistors NATL @ . VCE SAT VBE(SAT) (V) (V) c Max Min Max v * C0b (PF) Max * ‘ off (ns) Max NF (dB) Max hFE Min Max 5 500 18 75 225 2 4.5 18 5 500 18 75 225 2 4.5 25 25 5 100 25 90 180 2 (1 kHz) 10 10 10 TO-92 (94) 25 25 5 100 25 150 300
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T-29-Of
T-29-01
PN544
TI59
national 2N3859
2N2712
2N915
MPQ2222
MPQ6700
T1890
TN2219
PN101
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2n3391 complement
Abstract: 2N2712 2N2713 2N3391 2N2925 2N2711 2N2714 2N2923 2N2924 2N2926
Text: NPN SILICON SIGNAL G EN ER A L PURPOSE AMPLIFIERS AND SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 Ccb @ 10V 1 MHz Typical (P'f) @ 1Qmi, Min. (V) @ 10mA
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2N2711
2N2712
2N2713
2N2714
150mA
2N2923
2N2924
2N2925
2N531D
2N5311
2n3391 complement
2N3391
2N2926
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BSM 225
Abstract: BSM225A bsm225
Text: euoec F BSM 225 A SIMOPAC MODULE • Half bridge power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate Type VDS b f î D S on max Package Ordering Code BSM 225 A 200 V 120 A 0.0175 Q HB MOS 1
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C67076-S1103-A20
0ct-30-1997
BSM 225
BSM225A
bsm225
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
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n3860
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO- 98 P A C KA GE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
n3860
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beta transistor 2N2222
Abstract: 2N2924 equivalent beta dc of transistor 2N2222 2N2925 equivalent 2N2714 1N9148 beta transistor 2N2712 2N2905 2N2219 2n3390 equivalent beta transistor 150
Text: N PN SILICON SIG N AL G E N E R A L P U R P O S E A M P LIF IER S A N D SWITCHES V CE iat Type 2N2711 30*90 2N2712 75-225 2N2713 30-90 2N2714 75-225 2N2923 90-180 ' 2N2924 150-300 < 2N2925 235-470' 2N2926 35-470 ’ 2N3390 400-800 2N3391 250-500 Ccb @ 10V
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2N2711
2N2712
2N2713
2N2714
150mA
2N2923
2N2924
2N2925
2N3976
M23P-XS16
beta transistor 2N2222
2N2924 equivalent
beta dc of transistor 2N2222
2N2925 equivalent
1N9148
beta transistor 2N2712
2N2905 2N2219
2n3390 equivalent
beta transistor 150
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1105N
Abstract: No abstract text available
Text: REV AA FIG -P: Ç_ j - P IC K & 4. PLACE PAD O P T IO N MPP-02 n n n n n n n ! 234 [5.94] - - j T -•— .393 [9.98]- .225 [5.72] — -c-_ |^No 0F P0S * -100[2-54]) “ -225[5.72]J -D: — n 0 0 0 U U/\ D O U B LE ROW .395 [10.03] — „ -.435 [11.05]
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MPP-02
UNLE55
SSIt-ra-22-ffl-UX-XH-XX
1105N
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