ndf02n60zg
Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
ndf02n60zg
NDD02N60ZT4G
g1Dv
ndf02n60
NDF02N60Z
60ZG
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JF18006
Abstract: No abstract text available
Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use
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OCR Scan
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JE18006/D
JF18006
O-220
O-220
MJF18006,
221D0AB
221D-01
221D-02.
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NDF05N50ZG
Abstract: NDF05N50 5n50zg NDD05N50 50ZG NDD05N50Z-1G NDD05N50ZT4G
Text: NDF05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.5 W Features • • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested 100% Rg Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
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NDF05N50Z,
NDD05N50Z
JESD22-A114)
NDF05N50Z/D
NDF05N50ZG
NDF05N50
5n50zg
NDD05N50
50ZG
NDD05N50Z-1G
NDD05N50ZT4G
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PDF
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Untitled
Abstract: No abstract text available
Text: NDF08N50Z N-Channel Power MOSFET 500 V, 0.85 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS
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NDF08N50Z
NDF08N50Z/D
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221D
Abstract: A114 JESD22 NDF11N50ZG
Text: NDF11N50Z, NDP11N50Z N-Channel Power MOSFET 500 V, 0.52 W Features • • • • Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant http://onsemi.com ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise noted
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NDF11N50Z,
NDP11N50Z
NDF11N50Z
JESD22-A114)
NDF11N50Z/D
221D
A114
JESD22
NDF11N50ZG
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PDF
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B30H100G
Abstract: No abstract text available
Text: MBR30H100CT, MBRF30H100CT SWITCHMODE Power Rectifier 100 V, 30 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES 100 VOLTS Low Forward Voltage: 0.67 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity
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MBR30H100CT,
MBRF30H100CT
MBR30H100CT/D
B30H100G
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PDF
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b30h60g
Abstract: No abstract text available
Text: MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG http://onsemi.com SWITCHMODE Power Rectifier 60 V, 30 A SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 60 VOLTS 1 2, 4 Features and Benefits •
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Original
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MBRB30H60CT-1G,
MBR30H60CTG,
MBRF30H60CTG,
MBRB30H60CTT4G,
NRVBB30H60CTT4G,
MBRJ30H60CTG
MBRB30H60CT/D
b30h60g
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PDF
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BRF1545CT
Abstract: No abstract text available
Text: Order this data sheet by MBRF1545CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M BRF1545CT Advance Information SW ITCHMODE S c h o ttk y P o w e r R e c tifie rs Motorola Preferred Device SCHOTTKY BARRIER RECTIFIERS 15 AMPERES and 45 VOLTS The SW ITCHMODE Power Rectifier employs the Schottky Barrier principle in a
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OCR Scan
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MBRF1545CT/D
2PHX31340R-0
BRF1545CT
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PDF
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Untitled
Abstract: No abstract text available
Text: Order this data sheet by MBRF20100CT/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information SWITCHMODE Schottky Pow er R ectifiers The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial
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OCR Scan
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MBRF20100CT/D
2PHX31343R-Q
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PDF
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B20H100G
Abstract: B20H100G aka B20H100 SCHOTTKY BARRIER RECTIFIER aka B20H100G
Text: MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, MBRJ20H100CTG, NRVBB20H100CTT4G SWITCHMODE Power Rectifier 100 V, 20 A http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS Features and Benefits • 1 Low Forward Voltage: 0.64 V @ 125C
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MBR20H100CTG,
MBRB20H100CTG,
MBRF20H100CTG,
MBRJ20H100CTG,
NRVBB20H100CTT4G
MBR20H100CT/D
B20H100G
B20H100G aka
B20H100
SCHOTTKY BARRIER RECTIFIER aka B20H100G
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PDF
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Untitled
Abstract: No abstract text available
Text: NDF04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 2.0 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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NDF04N60Z,
NDD04N60Z
JESD22-A114)
NDF04N60Z/D
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B30L45G
Abstract: B30L45 MBRF30L45CTG 221D MBR30L45CTG
Text: MBR30L45CTG, MBRF30L45CTG SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits • • • • • • DUAL SCHOTTKY BARRIER RECTIFIERS 30 AMPERES, 45 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity
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MBR30L45CTG,
MBRF30L45CTG
MBR30L45CT/D
B30L45G
B30L45
MBRF30L45CTG
221D
MBR30L45CTG
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PDF
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ndf03n60zg
Abstract: NDD03N60Z 221D 369D A114 NDD03N60Z-1G 60ZG
Text: NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS on (TYP) @ 1.2 A 600 V 3.3 W
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Original
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NDF03N60Z,
NDP03N60Z,
NDD03N60Z
NDF03N60Z/D
ndf03n60zg
NDD03N60Z
221D
369D
A114
NDD03N60Z-1G
60ZG
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NDF04N60ZG
Abstract: NDD04N60ZT4G 221D 369D A114 JESD22 NDP04N60ZG 60ZG
Text: NDF04N60Z, NDP04N60Z, NDD04N60Z N-Channel Power MOSFET 600 V, 1.8 W Features • • • • http://onsemi.com Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant VDSS RDS on (TYP) @ 2 A 600 V 1.8 Ω
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Original
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NDF04N60Z,
NDP04N60Z,
NDD04N60Z
96aws
NDF04N60Z/D
NDF04N60ZG
NDD04N60ZT4G
221D
369D
A114
JESD22
NDP04N60ZG
60ZG
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u1620G
Abstract: U1620 aka rectifier u1620G u1620 u1620G aka U1620 diode u1620 c aka U1620 G MURF1620CTG MURF1620CT
Text: MURF1620CT Preferred Device SWITCHMODEt Power Rectifier These state-of-the-art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features http://onsemi.com •ăUltrafast 35 Nanosecond Recovery Times •ă150°C Operating Junction Temperature
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MURF1620CT
MURF1620CT/D
u1620G
U1620 aka
rectifier u1620G
u1620
u1620G aka
U1620 diode
u1620 c aka
U1620 G
MURF1620CTG
MURF1620CT
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PDF
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B20100G
Abstract: B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as
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Original
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MBRF20100CT
MBRF20100CT/D
B20100G
B20100G diode
B20100G AKA
AKA B20100
B20100G on aka
AKA B20100G
B20100 AKA
b20100 g
B20100G diode AKA
b20100
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PDF
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B30L45G
Abstract: MBR30L45CTG MBRF30 221D MBRF30L45CTG B30L45
Text: MBR30L45CTG, MBRF30L45CTG SWITCHMODE Power Rectifier 45 V, 30 A http://onsemi.com Features and Benefits •ăLow Forward Voltage •ăLow Power Loss/High Efficiency •ăHigh Surge Capacity •ă150°C Operating Junction Temperature •ă30 A Total 15 A Per Diode Leg
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Original
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MBR30L45CTG,
MBRF30L45CTG
MBR30L45CT/D
B30L45G
MBR30L45CTG
MBRF30
221D
MBRF30L45CTG
B30L45
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PDF
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Untitled
Abstract: No abstract text available
Text: NDF08N60Z N-Channel Power MOSFET 600 V, 0.95 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com VDSS
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Original
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NDF08N60Z
22-A114)
NDF08N60Z/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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Original
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NDF02N60Z,
NDD02N60Z
22-A114)
NDF02N60Z/D
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PDF
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NDD03N60Z
Abstract: No abstract text available
Text: NDF03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.6 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com
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Original
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NDF03N60Z,
NDD03N60Z
22-A114)
NDF03N60Z/D
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PDF
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B40250TG
Abstract: MBRB40250TT4G B40250 B40250G 221B-04
Text: MBR40250, MBR40250T, MBRF40250T, MBRB40250T 250 V, 40 A SWITCHMODE] Schottky Power Rectifier Features • • • • • http://onsemi.com 250 V Blocking Voltage Low Forward Voltage Drop, VF = 0.86 V Soft Recovery Characteristic, TRR < 35 ns Stable Switching Performance Over Temperature
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Original
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MBR40250,
MBR40250T,
MBRF40250T,
MBRB40250T
O-220AC
B40250G
O-220AB
O-220
B402plicable
MBR40250/D
B40250TG
MBRB40250TT4G
B40250
221B-04
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PDF
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NDF10N60ZG
Abstract: 221D A114 JESD22 NDP10N60Z
Text: NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 0.65 W, 600 Volts Features • • • • • Low ON Resistance Low Gate Charge Zener Diode−protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications
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Original
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NDF10N60Z,
NDP10N60Z
NDF10N60Z/D
NDF10N60ZG
221D
A114
JESD22
NDP10N60Z
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PDF
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b10l60g
Abstract: B10L60 221D MBR10L60CTG MBRF10L60CTG
Text: MBR10L60CT, MBRF10L60CT SWITCHMODE Power Rectifier 60 V, 10 A http://onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total 5 A Per Diode Leg
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Original
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MBR10L60CT,
MBRF10L60CT
MBR10L60CT/D
b10l60g
B10L60
221D
MBR10L60CTG
MBRF10L60CTG
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PDF
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B2045G
Abstract: MBR2045CTG B2045G AKA b2045 MBRF2045CTG MBR2045CTG TO220 221D-03 221D MBR2045CT MBRF2045CT
Text: MBR2045CT, MBRF2045CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*
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Original
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MBR2045CT,
MBRF2045CT
221D-01
221D-02
221D-03.
B2045G
MBR2045CTG
B2045G AKA
b2045
MBRF2045CTG
MBR2045CTG TO220
221D-03
221D
MBR2045CT
MBRF2045CT
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PDF
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