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    220N055T Price and Stock

    IXYS Corporation IXTP220N055T

    MOSFET N-CH 55V 220A TO220AB
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    IXYS Corporation IXTQ220N055T

    MOSFET N-CH 55V 220A TO3P
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    IXYS Corporation IXTH220N055T

    MOSFET N-CH 55V 220A TO247
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    IXYS Corporation IXTA220N055T

    MOSFET N-CH 55V 220A TO263
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    IXYS Corporation IXTC220N055T

    MOSFET N-CH 55V 130A ISOPLUS220
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    220N055T Datasheets Context Search

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    IXTA220N055T

    Abstract: IXTP220N055T 220N055T
    Text: Preliminary Technical Information 220N055T 220N055T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


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    PDF IXTA220N055T IXTP220N055T O-263 O-220) 220N055T IXTA220N055T IXTP220N055T 220N055T

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET 220N055T 220N055T VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF IXTA220N055T IXTP220N055T O-263 220N055T

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original
    PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchMVTM Power MOSFET VDSS ID25 220N055T7 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF IXTA220N055T7 O-263 220N055T

    IXTA220N055T7

    Abstract: No abstract text available
    Text: Preliminary Technical Information 220N055T7 TrenchMVTM Power MOSFET VDSS ID25 RDS on = 55 V = 220 A ≤ 4.0 m Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ


    Original
    PDF IXTA220N055T7 O-263 220N055T IXTA220N055T7