2203 TRANSISTOR Search Results

XR-2203

Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Contextual Info: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil­ icon NPN Darlington pairs on a single monolithic sub­

LS2521

Abstract: IEEE-1014 GPIB-400 MSA13 transistor uPD7210 IEEE-488 general purpose interface bus AS C2 DAB Clock Radio service manual PD7210 DHDT IEEE1014
Contextual Info: GPIB-1014P User Manual June 1994 Edition Part Number 370944A-01 Copyright 1984, 1994 National Instruments Corporation. All Rights Reserved. National Instruments Corporate Headquarters 6504 Bridge Point Parkway Austin, TX 78730-5039 512 794-0100 Technical support fax: (800) 328-2203

Contextual Info: A580-2203 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MAX1062

Abstract: MAX1062ACUB MAX1062AEUB MAX1062BCUB MAX1062BEUB MAX1062CCUB MAX1062CEUB
Contextual Info: 19-2203; Rev 0; 10/01 14-Bit, +5V, 200ksps ADC with 10µA Shutdown Features ♦ 14-Bit Resolution, 1LSB DNL ♦ +5V Single-Supply Operation ♦ Adjustable Logic Level 2.7V to 5.25V ♦ Input Voltage Range: 0 to VREF ♦ Internal Track/Hold, 4MHz Input Bandwidth

Contextual Info: 19-2203; Rev 0; 10/01 14-Bit, +5V, 200ksps ADC with 10µA Shutdown Features ♦ 14-Bit Resolution, 1LSB DNL ♦ +5V Single-Supply Operation ♦ Adjustable Logic Level 2.7V to 5.25V ♦ Input Voltage Range: 0 to VREF ♦ Internal Track/Hold, 4MHz Input Bandwidth

MAX1062

Abstract: MAX1062ACUB MAX1062AEUB MAX1062BCUB MAX1062BEUB MAX1062CCUB MAX1062CEUB
Contextual Info: 19-2203; Rev 1; 5/09 14-Bit, +5V, 200ksps ADC with 10µA Shutdown Features The MAX1062 low-power, 14-bit analog-to-digital converter ADC features a successive approximation ADC, automatic power-down, fast 1.1µs wake-up, and a highspeed SPI /QSPI™/MICROWIRE™-compatible interface. The MAX1062 operates with a single +5V analog

MAX1062

Abstract: MAX1062ACUB MAX1062AEUB MAX1062BCUB MAX1062BEUB MAX1062CCUB MAX1062CEUB circuit diagram of umax ups analog ups circuit diagram
Contextual Info: 19-2203; Rev 1; 5/09 14-Bit, +5V, 200ksps ADC with 10µA Shutdown Features The MAX1062 low-power, 14-bit analog-to-digital converter ADC features a successive approximation ADC, automatic power-down, fast 1.1µs wake-up, and a highspeed SPI /QSPI™/MICROWIRE™-compatible interface. The MAX1062 operates with a single +5V analog

Contextual Info: 19-2203; Rev 1; 5/09 14-Bit, +5V, 200ksps ADC with 10µA Shutdown The MAX1062 low-power, 14-bit analog-to-digital converter ADC features a successive approximation ADC, automatic power-down, fast 1.1µs wake-up, and a highspeed SPI /QSPI™/MICROWIRE™-compatible interface. The MAX1062 operates with a single +5V analog

SOD106A

Abstract: 1N5819 sod87 IMPLOTEC byv 20 diode 1N5817 Philips BYG90-40 BYG90-90 sod81
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers SCHOTTKY-BARRIER DIODES OVERVIEW leaded Vr V 20 30 40 90 100 SOD81 1.0 A SOD87 1.0 A surface-mount SOD106A SOT223 1.0 A 1.0 A

DTI2223

Abstract: spu2220 VPU2203 VCU 2133 dpu 2553 VCU2133 CVPU
Contextual Info: ♦»»MICRONAS 6251-253-5E INTERMETALL VCU 2133 Video Codec High-speed coder/decoder IC for analog-to-digital and digitai-to-analog conversion of the video signal in digital TV receivers based on the DIGIT 2000 concept. The VCU 2133 is a VLSI circuit in Cl technology, housed in a 40-pin Dil

STK4122II

Abstract: STK4122-II STK4122 resistor fix value STK4101II STK4101V STK4102II TR11
Contextual Info: Ordering number: EN2203B Thick Film Hybrid IC STK4122II AF Power Amplifier Split Power Supply (15W + 15W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4122II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy designing.

STK4122II

Abstract: en220 C536C STK4122-II STK4122
Contextual Info: Ordering number: EN2203B Thick Film Hybrid IC STK4122II AF Power Amplifier Split Power Supply (15W + 15W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4122II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy designing.

2N3637S

Abstract: 1000 volt pnp transistor 2N3634S 2N3635S 2N3636S 2N4928S 2N4929S 2N4930S 2N4931S BC140
Contextual Info: TO-39 PNP TRANSISTORS HIGH VOLTAGE AMPLIFIER AND SWITCH Device Type Polarity v CEO Volts lç max. (mA) PNP PNP PNP PNP PNP PNP PNP PNP 140 140 175 175 100 150 200 250 1000 1000 1000 1000 100 500 500 500 Device Type Polarity v CEO (Vdc) I q max. (mA) BC160

transistor 2203

Abstract: 2203 transistor 2203 SRA2203M KSR-I013-000 SRA2203
Contextual Info: SRA2203M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

SRA2203M

Abstract: transistor 2203
Contextual Info: SRA2203M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and

Contextual Info: SRA2203M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Contextual Info: SRA2203M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion 2. OUT • I nt erface circuit and driver circuit applicat ion Features 3. IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and

transistor 2203

Contextual Info: SRA2203M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

MRH80NHXV

Contextual Info: M O T O R O L A SC X ST RS /R F SbE D • t.3b?SSM O C H O S l ? T ■ T-3>£-1 ( MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA PRELIMINARY DATA DM0 MRH80NHXV, MRH80NHS mini PROCESSED TO MIL-S-19500 RADIATION TOLERANT TRANSISTOR Discrete Military Operation 80 VOLT, 500 MILLIAMPERE BIPOLAR NPN

bu 2225

Abstract: BU208A BU 102
Contextual Info: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

bu 515

Abstract: BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208
Contextual Info: . 2SC D • Ö235b05 QQQMÖ4Q ! ■ ISIEG BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF V84Ö v ~ r - 3 3 - < n BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high

transistor - MM6427

Abstract: MM6427 transistor 2S D 716 transistor 45 f 122 transistor D 716 TRANSISTOR 2SC 635 0914 transistor
Contextual Info: MM6427 SILICON NPN SILICON ANNULAR DARLING TO N TRANSISTOR NPN SILICON DARLING TO N TRANSISTOR . . . designed fo r use as high-gain a m p lifie rs fo r a ud io, chrom a, and c o n tro l c irc u its ; drivers fo r displays, lamps, buzzers and solenoids. •

2N4453

Abstract: 2N869A
Contextual Info: SEMICONDUCTOR! TECHNICAL DATA I 2N869A 2N4453. *^ CRYSTALONCS PNP Silicon Small-Signal Transistor 2805 Veteraris Highway Suite 14 Ronkonkoma, N.Y J1779 . . designed for high-speed switching applications. 2N869AJAN Device is on Product Discontinuance Notice

MFE9200

Contextual Info: MOTOROLA SC M O TO RO LA XSTRS/R me D F I b3b?aS4 0 001 74 3 3 | • SEMICONDUCTOR TECHNICAL DATA MFE9200 N-CHANNEL ENHANCEMENT-MODE TMOS FIELD EFFECT TRANSISTOR 200 VOLTS This T M O S FET is designed for high-voltage, high-speed switch­ ing applications such as line drivers, relay drivers, C M O S logic,