21MAY01 Search Results

Contextual Info: 307C1654BHLAB, 307C1654BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 70 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 150 Withstand Voltage

MARKING PARI SC70-6

Abstract: sot363 marking qs sm905
Contextual Info: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View

Contextual Info: SÌ1904EDH Vishay Siliconix New Product Dual N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY 0 .8 1 0 @ V g s = 4 .5 V 0 .7 3 • TrenchFET Power MOSFETS: 2.5-V Rated • ESD Protected: 1800 V • Thermally Enhanced SC-70 Package 1 .04 @ V Gs = 0.65

Contextual Info: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V

mosfet low vgs

Abstract: diode marking CODE VN S2 Si1501DL marking code vishay SILICONIX
Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V

Si1904EDH

Contextual Info: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V

Contextual Info: 307C1654BHLAB, 307C1654BHMAB Vishay Cera-Mite PTC Thermistors APPLICATION - STARTING IN ELECTRONIC FLUORESCENT BALLASTS STANDARD ELECTRICAL SPECIFICATIONS @ 25°C PARAMETER UNIT 70 ± 25% Maximum Voltage Vrms 265 Maximum Continuous Voltage Vrms 150 Withstand Voltage

Si1904EDH

Contextual Info: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V

lp8527

Abstract: 0X122 B25 640 TO3 transistor to1a CRC16 SD CARD CONTROLLER CMD26 TC6384AF ACMD18 TC6377AF cypher
Contextual Info: TENTATIVE DATA Revison0.35 SD Memory Card/SmartMedia Interface Controller TC6377BF/TC6384AF SPECIFICATION TENTATIVE Revison0.35 2001-06-25 Copyright 2001 Toshiba Corporation. All rights reserved. TOSHIBA STRICTRY CONFIDENTIAL 2001-07-11 TENTATIVE DATA Revison0.35

Si5465EDC

Abstract: siliconix
Contextual Info: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code

Si1563EDH

Abstract: "MARKING CODE EA"
Contextual Info: Si1563EDH New Product Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package 0.360 @ VGS = 2.5 V

Contextual Info: Si1904EDH Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS 1.04 @ VGS = 2.5 V

SUC85N10-04S

Contextual Info: SPICE Device Model SUC85N10-04S Vishay Siliconix N-Channel 100-V D-S 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

MARKING CODE EA

Abstract: 71416 SM563EDH
Contextual Info: SÌ1563EDH Vishay Siliconix New Product Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY FEATURES rDS(on) < ^) I d (A ) 0.280 G VQS = 4.5 V 1.28 V d s (V ) N-Channel 20 P-Channel -2 0 0.360 @ VGS * 2.5 V 1.13 0.450 @ V qs - 1.8 V 1.00 0.490 @ V GS = -4 .5 V

Contextual Info: — THIS DRAWING 15 UNPUBLISHED.- RELEASED M R PUBLICATION- BY TYCO ELECTRONICS CORPORATION. COPYRIGHT ALL R Gh TS RESERVED. LOC D isr GP 00 REVISIONS LTF D DATE OWN APVD 13JUL01 JS GB DESCRIPTION PER 0 S 20— 0281 — 01

Si1501DL

Abstract: "MARKING CODE S1"
Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V

Si1501DL

Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = −4.5 V −180 5.0 @ VGS = −2.5 V

03840

Abstract: MARKING CODE AA S0384-0
Contextual Info: Sii 501 DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel Vd s (V) N-Channe! 20 r D S (o n) lo(mA) (Q) 2.0 @ V GS = 4.5 V P-Channel 250 2.5 @ V GS = 2.5 V 150 3.8 @ VGS - -4 .5 V -1 8 0 5.0 @ VGS « -2 .5 V -1 0 0 -2 0

Si5463EDC

Contextual Info: Si5463EDC New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.062 @ VGS = –4.5 V –5.1 0.068@ VGS = –3.6 V –4.9 0.085 @ VGS = –2.5 V –4.4 0.120 @ VGS = –1.8 V –3.7 S 1206-8 ChipFET 1 D

Si1904EDH

Contextual Info: Si1904EDH New Product Vishay Siliconix Dual N-Channel 25-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS: 2.5-V Rated D ESD Protected: 1800 V D Thermally Enhanced SC-70 Package PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.810 @ VGS = 4.5 V 0.73 APPLICATIONS

Si1501DL

Contextual Info: Si1501DL Vishay Siliconix Complementary 20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363

h0603

Abstract: H0705
Contextual Info: Vishay Thin Film Single High Value Chip Resistors SURFACE MOUNT H FEATURES • Ohmic values to hundred megohms • Low Noise • Tight Tolerance TYPICAL PERFORMANCE Actual Size ◆ These high value resistors are manufactured using thin film technology and are available with improved performance and

8 pin SURFACE MOUNT RESISTOR

Abstract: NOMC16031002Z NOMC
Contextual Info: Vishay Thin Film Molded, 50 Mil Pitch, Dual-In-Line Resistor Networks Narrow Body FEATURES • Standard 8, 14 & 16 pin counts 0.150" Narrow Body JEDEC MS-012 • Rugged molded case construction • Stable thin film element Actual Size • Low temperature coefficient

Contextual Info: SPICE Device Model SUC85N10-04S Vishay Siliconix N-Channel 100-V D-S 175°°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range