Untitled
Abstract: No abstract text available
Text: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)
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SSM3J56MFV
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Untitled
Abstract: No abstract text available
Text: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C
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2SK4059MFV
100mV
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Untitled
Abstract: No abstract text available
Text: SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High-Speed Switching Applications Optimum for high-density mounting in small packages Characteristics Symbol Rating Unit Drain-source voltage VDS 20 V Gate-source voltage VGSS 10
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SSM3K04FV
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EASE63180
Abstract: ML63187 ML63189B ML63193 SASM63K AC power tool variable speed control circuit melody circuit
Text: ¡ ML63187/189B/193 User's Manual Please ignore data of ML63187 herein. The product is unavailable. FIRST EDITION ISSUE DATE: Mar. 2000 FEUL63193-01 E2Y0002-2X-13 NOTICE 1. The information contained herein can change without notice owing to product and/or
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ML63187/189B/193
ML63187
FEUL63193-01
E2Y0002-2X-13
EASE63180)
EASE63180.
M189B
Appendix-58
EASE63180
ML63189B
ML63193
SASM63K
AC power tool variable speed control circuit
melody circuit
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Untitled
Abstract: No abstract text available
Text: 2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC6026MFV General-Purpose Amplifier Applications Unit: mm • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE • Complementary to 2SA2154MFV Absolute Maximum Ratings (Ta = 25°C)
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2SC6026MFV
2SA2154MFV
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Untitled
Abstract: No abstract text available
Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2101MFV, RN2102MFV, RN2103MFV RN2104MFV, RN2105MFV, RN2106MFV Unit: mm z Complementary to the RN1101MFV to RN1106MFV R1 (kΩ) R2 (kΩ)
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RN2101MFVâ
RN2106MFV
RN2101MFV,
RN2102MFV,
RN2103MFV
RN2104MFV,
RN2105MFV,
RN1101MFV
RN1106MFV
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L15A
Abstract: MCM2125A
Text: MCM2115A 21L15A MCM2125A MCM21L25A M O TO R O LA 1024 x 1 STATIC RAM MOS T h e M C M 2 1 1 5 A a n d M C M 2 1 2 5 A fa m ilie s a re h ig h -s p e e d , 1024 w o r d s b y o n e -b it, ra n d o m -a c c e s s m e m o rie s fa b ric a te d u s in g H M O S , h ig h
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MCM2115A
MCM2125A
MCM2115A)
MCM2125A)
MCM2115A-MCM21
MCM2125AÂ
MCM21
L15A
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sat 1205
Abstract: 2SA1955FV
Text: 2SA1955FV シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA1955FV ○ 低周波増幅用 ○ スイッチング用 ○ ミューティング用 0.22±0.05 項 目 記 号 定 格 2 単位 コ レ ク タ ･ ベ ー ス 間 電 圧
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2SA1955FV
sat 1205
2SA1955FV
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SSM3K38MFV
Abstract: No abstract text available
Text: SSM3K38MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K38MFV ○ High-Speed Switching Applications ○ Analog Switch Applications 1.2±0.05 1 2 0.32±0.05 0.4 0.8±0.05 0.4 0.8±0.05 0.22±0.05 1.2V drive Low ON-resistance : Ron = 20 Ω max (@VGS = 1.2 V)
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SSM3K38MFV
SSM3K38MFV
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SSM3J15FV
Abstract: No abstract text available
Text: SSM3J15FV TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J15FV High Speed Switching Applications Analog Switch Applications Low on-resistance Unit: mm Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V DC ID −100 Pulse
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SSM3J15FV
SSM3J15FV
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SSM3K16FV
Abstract: No abstract text available
Text: SSM3K16FV 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K16FV ○ 高速スイッチング用 ○ アナログスイッチ用 : Ron = 4.0 Ω 最大 (@VGS = 2.5 V) 1.2±0.05 : Ron = 15 Ω (最大) (@VGS = 1.5 V) 絶対最大定格 (Ta = 25°C)
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SSM3K16FV
SSM3K16FV
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2SA2154MFV
Abstract: 2SC6026MFV
Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity
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2SA2154MFV
2SC6026MFV
2SA2154MFV
2SC6026MFV
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SSM3K16FV
Abstract: No abstract text available
Text: SSM3K16FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K16FV High Speed Switching Applications Analog Switch Applications 1.2±0.05 : Ron = 15 Ω max (@VGS = 1.5 V) Symbol Rating Unit Drain-Source voltage Characteristics VDS 20 V Gate-Source voltage
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SSM3K16FV
SSM3K16FV
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RN1107MFV
Abstract: RN1109MFV RN2107MFV RN2108MFV RN2109MFV
Text: RN2107MFV～RN2109MFV 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN2107MFV, RN2108MFV, RN2109MFV ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN2107MFVRN2109MFV
RN2107MFV,
RN2108MFV,
RN2109MFV
RN1107MFVRN1109MFV
RN2107MFV2109MFV
RN2107MFV
RN2108MFV
RN1107MFV
RN1109MFV
RN2107MFV
RN2108MFV
RN2109MFV
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Untitled
Abstract: No abstract text available
Text: SSM3J56MFV 東芝電界効果トランジスタ シリコンPチャネルMOS形 U-MOSⅥ SSM3J56MFV ○ パワーマネジメントスイッチ • • 1.2 V 駆動です オン抵抗が低い:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V)
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SSM3J56MFV
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RN1104FV
Abstract: RN2101FV RN1105FV RN1101FV RN1102FV RN1103FV RN1106FV RN2106FV
Text: RN1101FV~RN1106FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1101FV, RN1102FV, RN1103FV RN1104FV, RN1105FV, RN1106FV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit in mm Ultra-small package, suited to very high density mounting
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RN1101FVRN1106FV
RN1101FV,
RN1102FV,
RN1103FV
RN1104FV,
RN1105FV,
RN1106FV
RN2101FV
RN2106FV
RN1104FV
RN1105FV
RN1101FV
RN1102FV
RN1103FV
RN1106FV
RN2106FV
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Untitled
Abstract: No abstract text available
Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV, RN1113MFV Unit: mm 1.2 ± 0.05 A wide range of resistor values is available for use in various circuits. z Complementary to the RN2112MFV and RN2113MFV
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RN1112MFV
RN1113MFV
RN1112MFV,
RN2112MFV
RN2113MFVmitation,
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Untitled
Abstract: No abstract text available
Text: RN2112MFV,RN2113MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN2112MFV, RN2113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z A wide range of resistor values is available for use in various circuits.
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RN2112MFV
RN2113MFV
RN2112MFV,
RN1112MFV
RN1113MFV
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RN1110MFV
Abstract: RN1111MFV RN2110MFV RN2111MFV
Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05 0.80 ± 0.05 0.4 0.8 ± 0.05 1 1 0.4 A wide range of resistor values is available for use in various circuits.
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RN1110MFV
RN1111MFV
RN2110MFV
RN2111MFV
RN1111MFV
RN2111MFV
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mcm6830
Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Text: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories
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MS800MM0S
MC3870
MC14S00B,
MC141000/1206
M2900
M10800
M6800
MC14500B,
MC141000/1200
mcm6830
EXORCISER motorola M68MM01A
7642T
MC68B54
transistor bf 175
motorola application note 6809 6844
MMS1117
EXORCISER motorola M68MM01A2
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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RN1131MFV
Abstract: RN2131MFV RN2132MFV
Text: RN1131MFV,RN1132MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1131MFV,RN1132MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications z Reduce a quantity of parts and manufacturing process
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RN1131MFV
RN1132MFV
RN2131MFV
RN2132MFV
RN2132MFV
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sat 1205
Abstract: No abstract text available
Text: RN2119MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2119MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm 0.22±0.05 z Reduce a quantity of parts and manufacturing process 0.4 1 0.4 0.8±0.05 2
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RN2119MFV
RN1119MFV
sat 1205
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Untitled
Abstract: No abstract text available
Text: RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1119MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications 0.32±0.05 1.2±0.05 0.4 0.8±0.05 1 0.4 With built-in bias resistors
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RN1119MFV
RN2119MFV
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