21FEB05 Search Results

mil-std-202 106

Abstract: MIL-STD pcb connector T-flash
Contextual Info: Product Specification（製品規格） 108108-78224 T-FLASH CONNECTOR T-FLASH コネクタ 21FEB05 Rev.A 1. 適用範囲 Scope : 1.1 内容 1.1 Contents 本規格は T-FLASH コネクタの製品性能試験方法、品質 This specification covers the requirements for product

Contextual Info: 593D Vishay Sprague Solid Tantalum Chip Capacitors Tantamount Commercial, Surface Mount for Switch Mode Power Supplies and Converters FEATURES • • • • PERFORMANCE/ELECTRICAL CHARACTERISTICS Terminations: 100% Tin, Standard. SnPb available. Lead Pb -free available

71079

Abstract: mosfet low vgs si1555dl-t1-e3 Si1555DL Si1555DL-T1 A.4 SOT363
Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V

SiP12501

Abstract: MBR0520 MLP33-6
Contextual Info: SiP12501 New Product Vishay Siliconix Boost Converter for Single/Double AA Cell or NiMH Battery for White LED Applications FEATURES D Voltage Mode Control with Internal Frequency Compensation D 0.65-V to 3.3-V Input Voltage Range D Low Startup Voltage: 0.65 V

SiP41105

Abstract: SiP41105DB SiP41105DQP-T1 TSSOP-16
Contextual Info: SiP41105 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Syncronous MOSFET Enable Shutdown Control

Si2327

Abstract: Si2327DS 50256r
Contextual Info: SPICE Device Model Si2327DS Vishay Siliconix P-Channel 200-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7892BDP

Contextual Info: SPICE Device Model Si7892BDP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SiP41105

Abstract: SiP41105DB SiP41105DQP-T1 TSSOP-16 72719
Contextual Info: SiP41105 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Syncronous MOSFET Enable Shutdown Control

2N7002K

Contextual Info: SPICE Device Model 2N7002K Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

marking dt2

Abstract: PD driver Si4724CY S-50244
Contextual Info: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V

1N40

Contextual Info: 1N4001G THRU 1N4007G GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 1.0A FEATURE DO – 41\DO – 204AL Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed

SiP12401

Abstract: MBR0520 MLP33-6 Si2302DS
Contextual Info: SiP12401 Vishay Siliconix New Product Boost Controller For Double AA Cell or Li-Ion Battery For White LED Application FEATURES APPLICATIONS D Voltage Mode Control with Internal Frequency Compensation D 1.8-V to 5.0-V Input Voltage Range D PWM Control with 600-kHz Fixed Switching Frequency

Contextual Info: SiP41103 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver for DC/DC Conversion FEATURES D D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Internal Bootstrap Diode Adaptive Shoot-Through Protection Synchronous MOSFET Disable Adjustable Highside Propagation Delay

S50242

Abstract: S-50242
Contextual Info: SUM110N06-3m9H New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) Qg (Typ) 60 0.0039 @ VGS = 10 V 110 a 200 D D D D D D TrenchFETr Power MOSFET 175_C Junction Temperature New Package with Low Thermal Resistance

Contextual Info: Si7941DP Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A) 0.027 @ VGS = −10 V −9.0 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile 0.039 @ VGS = −4.5 V −7.5

Si4724CY

Abstract: marking dt2
Contextual Info: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V

SUD23N06-31L

Abstract: 72145
Contextual Info: SUD23N06-31L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.031 @ VGS = 10 V 23 0.045 @ VGS = 4.5 V 19.5 VDS (V) 60 D TrenchFETr Power MOSFET D 175_C Junction Temperature Pb-free Available APPLICATIONS

SUD50N06-09L-E3

Abstract: 72004 SUD50N06-09L
Contextual Info: SUD50N06-09L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY (A)a D TrenchFETr Power MOSFET D 175_C Junction Temperature 0.0093 @ VGS = 10 V 50 APPLICATIONS 0.0122 @ VGS = 4.5 V 50 D Automotive − ABS − Motor Drives

Contextual Info: T H IS DRAWING IS U N P U B LIS H E D . RELEASED FDR PUBLICATIO N A L L RIGHTS COPYRIGHT LOC RESERVED. BY TYCO ELECTRONICS CORPORATION. CONNECTOR CONTACT ASSEMBLY EXEMPLARY REVISIONS D IS T H D IM E N S IO N S LTR DE SC R IPTIO N DATE EH10 - 0 2 4 7 - 0 5

S-50244

Abstract: S50244 Si4724CY marking dt2 s50244rev
Contextual Info: Si4724CY Vishay Siliconix N-Channel Synchronous MOSFETs with Break-Before-Make FEATURES D D D D D 0- to 30-V Operation Driver Impedance—3 W Undervoltage Lockout Fast Switching Times 30-V MOSFETs D D D D High Side: 0.0375 W @ VDD = 4.5 V Low Side: 0.029 W @ VDD = 4.5 V

Contextual Info: Si1555DL Vishay Siliconix Complementary Low-Threshold MOSFET Pair FEATURES PRODUCT SUMMARY N-Channel P-Channel 20 −8 rDS on (W) ID (A) 0.385 @ VGS = 4.5 V 0.70 0.630 @ VGS = 2.5 V 0.54 0.600 @ VGS = −4.5 V −0.60 0.850 @ VGS = −2.5 V −0.50 1.200 @ VGS = −1.8 V

Si1330EDL

Contextual Info: SPICE Device Model Si1330EDL Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SUD40N06-25L-E3

Abstract: SUD40N06-25L
Contextual Info: SUD40N06-25L Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC TE CONNECTIVITY REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR DIM L # .010 DESCRIPTION DATE APVD D5 REV PER ECR-12-018919 31OCT2012 ML SZ D6 UPDATED 12NOV2012 ML