21F1C Search Results

B1181

Abstract: JIS B1181 TRANSISTOR b1181 2-16C1C B11-88 JIS b 2-21F1C ac238 AC654 AC652
Contextual Info: ACCESSORIES Some sem iconductors require accessories. Such accessories are listed below th e external drawings o f each sem iconductor standard. Usage o f such accessories is show n in th e follow ing figures. to be applied to 2-16C1C (to be appüed to 2-21F1B and 2-21F1C)

HN2A26FS

Contextual Info: HN2A26FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN2A26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package. 1.0±0.05 : IC = −100 mA (max) • High hFE

RN1102FS

Abstract: RN2111FS RN49P1FS
Contextual Info: RN49P1FS 東芝トランジスタ シリコンNPN • PNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN49P1FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm

RN1961FS

Abstract: RN1966FS RN2961FS RN2962FS RN2963FS RN2964FS RN2965FS RN2966FS
Contextual Info: RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)

RN1972FS

Abstract: RN1973FS RN2972FS RN2973FS
Contextual Info: RN1972FS,RN1973FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1972FS,RN1973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Complementary to RN2972FS, RN2973FS 0.8±0.05

Contextual Info: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)

transistor TO-3P Outline Dimensions

Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
Contextual Info: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,

Contextual Info: RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

Contextual Info: RN1970FS,RN1971FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1970FS,RN1971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Complementary to RN2970FS, RN2971FS

Contextual Info: RN2970FS,RN2971FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 package. fS6 E Rating Unit Collector-base voltage

HN2A26FS

Contextual Info: HN2A26FS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 HN2A26FS ○ 低周波増幅用 ○ AM 増幅用 単位: mm 1.0±0.05 記号 定格 単位 VCBO −50 V コ レ ク タ ・ エ ミ ッ タ 間 電 圧 VCEO −50 V エ ミ ッ タ ・ ベ ー ス 間 電 圧

RN1970FS

Abstract: RN1971FS RN2970FS RN2971FS
Contextual Info: RN1970FS,RN1971FS 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1970FS, RN1971FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用

RN296PFS

Abstract: 816 k
Contextual Info: RN296PFS 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN296PFS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用 単位: mm 1.0±0.05

Contextual Info: RN2970FS,RN2971FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1970FS, RN1971FS

transistor 975

Abstract: TRANSISTOR 545 2F1B TO-3P Jedec package outline
Contextual Info: Transistor Outline Package TO-3P L パッケージ 外形図 パッケージ形状および寸法 単位 : mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 2 1 (Bottom view) 5.2 max 2 2.8 1 3 0.6 +0.25 –0.10

RN1972FS

Abstract: RN1973FS RN2972FS RN2973FS
Contextual Info: RN2972FS, RN2973FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN2972FS, RN2973FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

HN2C26FS

Contextual Info: HN2C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C26FS Frequency General-Purpose Amplifier Applications Unit: mm 1.0±0.05 • Excellent hFE linearity • Lead (Pb) - free 2 5 3 4 +0.02 Maximum Ratings (Ta = 25°C) Characteristic 6 0.48 -0.04

RN1971FS

Abstract: RN2970FS RN2971FS RN1970FS
Contextual Info: RN2970FS,RN2971FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2970FS,RN2971FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 1 6 2 5 3 4 +0.02 0.48 -0.04

RN1961FS

Abstract: RN1966FS RN2961FS RN2962FS RN2963FS RN2964FS RN2965FS RN2966FS
Contextual Info: RN2961FS~RN2966FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2961FS,RN2962FS,RN2963FS, RN2964FS,RN2965FS,RN2966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

RN1961FS

Abstract: RN1962FS RN1963FS RN1964FS RN1965FS RN1966FS RN2961FS RN2966FS
Contextual Info: RN1961FS~RN1966FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1961FS,RN1962FS,RN1963FS RN1964FS,RN1965FS,RN1966FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm

HN2C26FS

Contextual Info: HN2C26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN2C26FS Frequency General-Purpose Amplifier Applications Unit: mm Two devices are incorporated into a fine-pitch, Small-Mold (6-pin) package • High current : IC = 100 mA (max) • High hFE

RN1961FS

Abstract: RN1966FS RN2961FS RN2962FS RN2963FS RN2964FS RN2965FS RN2966FS
Contextual Info: RN2961FS~RN2966FS シリコンPNPエピタキシャル形 PCT方式 (バイアス抵抗内蔵) 東芝トランジスタ RN2961FS, RN2962FS, RN2963FS RN2964FS, RN2965FS, RN2966FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用

RN1961FS

Abstract: RN1962FS RN1963FS RN1964FS RN1965FS RN1966FS RN2961FS RN2966FS
Contextual Info: RN1961FS~RN1966FS 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1961FS, RN1962FS, RN1963FS RN1964FS, RN1965FS, RN1966FS ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用