21EI2 Search Results

Contextual Info: '> * i h Silicon t' 9 * r i s T J U M i s N P N X n y 3 V m MAG m 14.5 dB TYP. « g Æ ^ * » fit 20 V m%L!± VcEO 12 V V ebo 3.0 V Ä le 100 mA * Pt 250 mW /$ T í 150 #C K T„. -6 5 -+ 1 5 0 . ,y 9 ^ x f4 *S S 9 7 % ^ x’ 3 > ff « V - f â : mm) è f = l GHz

AT-60500

Abstract: AT-01635 AT-21400 AT21400 AT-60586
Contextual Info: Silicon Bipolar Transistors Low Noise Transistors Typical Specifications at +25°C Case Temperature Part Number Test Freq. (GHz) NF0 (dB) PldB (dBm) I 21eI2 @ 1.0 GHz (dB) Max. Usable Freq.M (GHz) w* (GHz) AT-41400 AT-60100 AT-60200 AT-60500 2.0 2.0 2.0

HRMA-0470B

Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Contextual Info: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic

transistor bf 244

Abstract: AT-21400 D42E Rbl 69 AT-21400-G chip die hp transistor
Contextual Info: blE J> HEWLETT-PACKARD/ CMPNTS HEW LETT PACKARD m m MMi475flM □ □□t17cU Features • • • • 40B AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Chip Outline1 Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs High S21 Gain: 9.5 dB Typical at 4 GHz

e981-08

Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981
Contextual Info: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi­

Contextual Info: A V A N T E K INC SOE D 0AVANTEK 1 1 4 m 0QDb445 7 AT-00572 Up to 1 GHz General Purpose Silicon Bipolar Transistor T-Sl-'Zl Features Avantek TO-72 Package • 19.0 dBm typical Pi dB at 1.0 GHz • 6.0 d B typical G i dB at 1.0 GHz .210 * 5.33 MAX • 2.3 dB typical NFo at 1.0 GHz

23STYLE

Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION