MB120L
Abstract: DO-216AA
Text: LITE-ON SEMICONDUCTOR MB120L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 Volts FORWARD CURRENT - 1.0 Ampere FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Ultra low VF provides higher efficiency and extends battery life
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MB120L
DO-216AA
DO-216AA
016grams
MB120L
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JEDEC DO-216aa
Abstract: DO-216AA
Text: SMD Schottky Barrier Rectifier CDBE140-G RoHS Device REVERSE VOLTAGE - 40 Volts FORWARD CURRENT- 1.0 Ampere FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF provides higher efficiency and extends
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CDBE140-G
DO-216AA
300us
JEDEC DO-216aa
DO-216AA
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Untitled
Abstract: No abstract text available
Text: STPS1150 Power Schottky rectifier Datasheet - production data Description A These 150 V power Schottky rectifiers are suited for switch mode power supplies on up to 24 V rails and high frequency converters. K STmite JEDEC DO-216AA STPS1150M Packaged in STmite/STmite flat, SMA and axial,
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STPS1150
DO-216AA)
STPS1150M
STPS1150MF
DO-214AC)
STPS1150A
DO-41
DocID9472
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PDF
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JEDEC DO-216aa
Abstract: MB120E DO216AA
Text: LITE-ON SEMICONDUCTOR MB120E SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 Volts FORWARD CURRENT - 1.0 Ampere FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF&IR provides higher efficiency and extends battery life
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MB120E
DO-216AA
DO-216AA
016grams
40ical
300us
26-Dec-2001,
KSHP03
JEDEC DO-216aa
MB120E
DO216AA
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PDF
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MB140
Abstract: KSHP01
Text: LITE-ON SEMICONDUCTOR MB140 REVERSE VOLTAGE - 50 to 1000 Volts FORWARD CURRENT- 1.0 Ampere SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF provides higher efficiency and extends
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MB140
DO-216AA
DO-216AA
016grams
10ical
300us
26-Dec-2001,
KSHP01
MB140
KSHP01
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PDF
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KSHP04
Abstract: MB120L
Text: LITE-ON SEMICONDUCTOR MB120L SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 Volts FORWARD CURRENT - 1.0 Ampere FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Ultra low VF provides higher efficiency and extends battery life
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Original
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MB120L
DO-216AA
300us
26-Dec-2001,
KSHP04
KSHP04
MB120L
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PDF
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MB120E
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR MB120E SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 20 Volts FORWARD CURRENT - 1.0 Ampere FEATURES DO-216AA For surface mounted applications Metal-Semiconductor junction with guardring Epitaxial construction Low VF&IR provides higher efficiency and extends battery life
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MB120E
DO-216AA
DO-216AA
016grams
MB120E
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PDF
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MBRM140T1G
Abstract: No abstract text available
Text: MBRM140T1G, NRVBM140T1G, MBRM140T3G, NRVBM140T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces
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MBRM140T1G,
NRVBM140T1G,
MBRM140T3G,
NRVBM140T3G
MBRM140/D
MBRM140T1G
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PDF
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MBRM110LT1G
Abstract: No abstract text available
Text: MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM110LT1G,
NRVBM110LT1G,
NRVBM110LT3G
MBRM110L/D
MBRM110LT1G
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PDF
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TP-105-01-02
Abstract: s467a MAX3232so TP-105-01-05 SAFC915MA70N-TC11 OMRON C20 W934IT TP-105-01-09 brc16 TP-105-01
Text: Chapter 1 TRF6903 Demonstration and Evaluation Kit Overview This chapter provides an overview of the TRF6903 demonstration and development kit. Topic Page 1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1-2
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TRF6903
MSP-TRF6903-DEMO
TP-105-01-02
s467a
MAX3232so
TP-105-01-05
SAFC915MA70N-TC11
OMRON C20
W934IT
TP-105-01-09
brc16
TP-105-01
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PDF
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NRVBM2H100T3G
Abstract: No abstract text available
Text: MBRM2H100T3G, NRVBM2H100T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal
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MBRM2H100T3G,
NRVBM2H100T3G
MBRM2H100/D
NRVBM2H100T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: NRVTSM260E Surface Mount Trench Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com Features • • • • • • • • • • • Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2
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NRVTSM260E
NRVTSM260/D
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PDF
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Untitled
Abstract: No abstract text available
Text: 1PMT5.0AT3 Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and
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r14525
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRM5817T3/D SEMICONDUCTOR TECHNICAL DATA Product Preview MBRM5817T3 MBRM5819T3 Medium Power Surface Mount Products 1A Schottky Rectifier Powermite Package SCHOTTKY BARRIER RECTIFIERS 1 AMPERE 20 & 40 VOLTS Powermite devices are an advanced series of high performance, Schottky
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MBRM5817T3/D
MBRM5817T3
MBRM5819T3
MBRM5817T3/D*
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PDF
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IGBT Battery 120 watt Charger circuit diagrams
Abstract: tl494 spice model four relay stabilizer circuit diagram 650 va gsm door lock circuit diagram MRC 433 mosfet MC34066 SOLUTION FOR SMPS USING TL494 MOSFET ESD Rated TL594 phone charger car power inverter TL494
Text: BRD8016/D Rev. 0, Nov-2000 Wireless Component Solutions for Handsets and Accessories Wireless Component Solutions for Handsets and Accessories BRD8016/D Rev. 0, Nov–2000 SCILLC, 2000 “All Rights Reserved’’ WIRELESS EZFET is a trademark of Semiconductor Components Industries, LLC SCILLC .
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BRD8016/D
Nov-2000
r14525
IGBT Battery 120 watt Charger circuit diagrams
tl494 spice model
four relay stabilizer circuit diagram 650 va
gsm door lock circuit diagram
MRC 433 mosfet
MC34066
SOLUTION FOR SMPS USING TL494
MOSFET ESD Rated
TL594 phone charger
car power inverter TL494
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PDF
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1PMT26AT1
Abstract: mlt 22 627 1PMT5.0AT3G
Text: 1PMT5.0AT1/T3 Series Zener Transient Voltage Suppressor POWERMITE Package The 1PMT5.0AT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low Zener
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MBRM110LT1
Abstract: No abstract text available
Text: MBRM110L Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM110L
MBRM110L
MBRM110LT1
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MBRM110ET1G
Abstract: MBRM110E MBRM110ET1 MBRM110ET3 MBRM110ET3G
Text: MBRM110E Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM110E
MBRM110E/D
MBRM110ET1G
MBRM110E
MBRM110ET1
MBRM110ET3
MBRM110ET3G
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zener 35b
Abstract: 1PMT5920BT3 1PMT5921BT3 1PMT5922BT3 1PMT5923BT3 1PMT5924BT3 1PMT5925BT3 1PMT5927BT3 1PMT5929BT3
Text: 1PMT5920BT3 Series 3.2 Watt Plastic Surface Mount POWERMITE Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same
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1PMT5920BT3
r14525
1PMT5920BT3/D
zener 35b
1PMT5921BT3
1PMT5922BT3
1PMT5923BT3
1PMT5924BT3
1PMT5925BT3
1PMT5927BT3
1PMT5929BT3
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MBRM110E
Abstract: MBRM110ET1 MBRM110ET3
Text: MBRM110E Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM110E
r14525
MBRM110E/D
MBRM110E
MBRM110ET1
MBRM110ET3
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PDF
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MBRM1H100T3G
Abstract: marking B1H
Text: MBRM1H100T3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM1H100T3G
MBRM1H100/D
MBRM1H100T3G
marking B1H
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PDF
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SWITCHYARD LAYOUT
Abstract: SWITCHYARD SWITCHYARD and bus bar arrangement switchyard control LAYOUT Electrical SWITCHYARD Bus-bars arrangement in substation abb switchyard manual BUSBAR calculation datasheet CM01 ABB MCB 120
Text: &RQWURO WHUPLQDO 5 & 1MRK 511 120-BEN Page 1 Revision: Issued: March 2003 Data subject to change without notice HDWXUHV • Open terminal with extensive configuration possibilities and expandable hardware design to meet specific user requirements
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120-BEN
092-UEN
093-UEN
101-UEN
009-BEN
112-BEN
SE-721
SWITCHYARD LAYOUT
SWITCHYARD
SWITCHYARD and bus bar arrangement
switchyard control LAYOUT
Electrical SWITCHYARD
Bus-bars arrangement in substation
abb switchyard manual
BUSBAR calculation datasheet
CM01
ABB MCB 120
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PDF
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MBRM140T1G
Abstract: MBRM140 MBRM140T1 MBRM140T3 MBRM140T3G
Text: MBRM140 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM140
MBRM140T1G
MBRM140
MBRM140T1
MBRM140T3
MBRM140T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: MBRM140E Low Leakage Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced
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MBRM140E
MBRM140E/D
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