2164 DRAM Search Results

2164 DRAM Result Highlights (5)

Part	Manufacturer	Description
UPD48011318FF-FH16-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011436FF-FH12-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011336FF-FH16-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48011418FF-FH12-FF1-A	Renesas Electronics Corporation	Low Latency DRAM, T-LBGA, /Tray
UPD48288218AFF-E24-DW1	Renesas Electronics Corporation	Low Latency DRAM, T-TFBGA, /Tray

2164 DRAM Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BP 109 Abstract: osram tube "BP 109" dali schematic LM 4229 data sheet osram dali Sylvania OSRAM Osram Mercury 1819 bulb HCI3000 Text: COLOURS COME AND COLOURS GO. HCI ’ S S TA Y S . P O W E R S TA R HCI® – CERAMIC-TECHNOLOGY THERE IS LIGHT. AND THERE IS OSRAM. OSRAM CERAMIC TECHNO LOGY GETS MORE O U T O F M E TA L H A L I D E L A M P S . H C I ® F R O M O S R A M . COLOUR IDENTITY FROM	Original	Delhi-110001 BP 109 osram tube "BP 109" dali schematic LM 4229 data sheet osram dali Sylvania OSRAM Osram Mercury 1819 bulb HCI3000	PDF
Untitled Abstract: No abstract text available Text: SG5722G4AH8P0UU April 23, 2009 Ordering Information Part Numbers Description Module Speed SG5722G4AH8P0KA 2Gx72 16GB , DDR3, 240-pin Registered DIMM, Parity, ECC, CoolFlex, 512Mx4 Based, DDR3-800-555, 30.40mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6	Original	SG5722G4AH8P0UU SG5722G4AH8P0KA 2Gx72 240-pin 512Mx4 DDR3-800-555, PC3-6400 SG5722G4AH8P06B	PDF
Untitled Abstract: No abstract text available Text: SG5721G4AH8P6UU April 23, 2009 Ordering Information Part Numbers Description Module Speed SG5721G4AH8P6KA 1Gx72 8GB , DDR3, 240-pin Registered DIMM, Parity, ECC, CoolFlex, 256Mx4 Based, DDR3-800-555, 30.40mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6	Original	SG5721G4AH8P6UU SG5721G4AH8P6KA 1Gx72 240-pin 256Mx4 DDR3-800-555, PC3-6400 SG5721G4AH8P66B	PDF
Core8051 Abstract: U1AFS600-FG256 FlashPro3 flashpro3 schematic AES-128 FG256 PQ208 gaa 716 kt 501 PUSH PULL MOSFET DRIVER dip Text: Preliminary v0.4 Actel Fusion Mixed-Signal FPGA for the MicroBlade Advanced Mezzanine Card Solution Features and Benefits • Targeted to Advanced Mezzanine Card AdvancedMC Designs • Designed in Partnership with MicroBlade • 8051-Based Module Management Controller (MMC)	Original	8051-Based 130-nm, 32ost Core8051 U1AFS600-FG256 FlashPro3 flashpro3 schematic AES-128 FG256 PQ208 gaa 716 kt 501 PUSH PULL MOSFET DRIVER dip	PDF
IC 4822 Abstract: transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram Text: DVD Receiver LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 Service Service Service LX3750W LX3700D Service Manual TABLE OF CONTENTS COMPACT Page Location of PC Boards . 1-2 Versions Variation & Package . 1-2	Original	LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 LX3750W LX3700D BAS316 BZX79-B5V1 BZX79-B15 IC 4822 transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram	PDF
actel smart fusion Abstract: No abstract text available Text: Preliminary v0.4 Actel Fusion Mixed-Signal FPGA for the MicroBlade Advanced Mezzanine Card Solution Features and Benefits • Targeted to Advanced Mezzanine Card AdvancedMC Designs • Designed in Partnership with MicroBlade • 8051-Based Module Management Controller (MMC)	Original	8051-Based actel smart fusion	PDF
R5F562N8 Abstract: R5F61668RN50FPV QB-MINI2 r0e00008akce00 176LQFP R5F64185 R5F72855 R5F72167ADFA R4F2472VBR34V R0E000010KCE00 Text: Renesas Electronics America Solutions Guide Embedded Systems Conference 2010 Edition Renesas Electronics Corporation—the new company resulting from the April 1, 2010 merger of Renesas Technology Corporation and NEC Electronics Corporation—is a global semiconductor powerhouse offering a wide range of advanced solutions for a huge	Original	0410/1K/JPGraphics/PF/SP R01PF0001EU0100 R5F562N8 R5F61668RN50FPV QB-MINI2 r0e00008akce00 176LQFP R5F64185 R5F72855 R5F72167ADFA R4F2472VBR34V R0E000010KCE00	PDF
Untitled Abstract: No abstract text available Text: SM572164574E63R May 31, 2000 Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • July 26, 1999 Modified DC specifications on page 5.	Original	SM572164574E63R 128EREIN	PDF
Untitled Abstract: No abstract text available Text: SM564644574X83R May 31, 2000 Revision History • May 31, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • July 27, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com	Original	SM564644574X83R 512MByte 64Mx4	PDF
information applikation Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR Text: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond	OCR Scan		PDF
BA5 marking Abstract: No abstract text available Text: M I CR ON T E C H N O L O G Y INC 3ÖE b l l l S M 6] G D G S 4 S S i> \ M R N ADVANCE i. •iiivir ^ ? rmsry p r a-itoafcvh 1 MEG DRAM MODULE FAST PAGE MODE DRAM MODULE FEATURES PIN ASSIGNMENT Top View • Common RAS control pinout in a 72-pin single-in-line	OCR Scan	72-pin 175mW 024-cycle T9D136M 0Q54b2 T-46-23-17 GOG24fci3 BA5 marking	PDF
30 pin SIP dram memory Abstract: No abstract text available Text: I^IIC R O N MT8C9024 1MEG x 9 DRAM DRAM MODULE FAST PAGE MODE PIN ASSIGNMENT Top View • Industry standard pin-out in a 30-pin single-in-line package • High performance CMOS silicon gate process • Single 5V±10% power supply • All inputs, outputs and clocks are fully TJ'L and	OCR Scan	MT8C9024 30-pin 1575mW 30 pin SIP dram memory	PDF
2164 dynamic ram Abstract: No abstract text available Text: MITSUBISHI LS Is DRAM MODULE FAST PAGE MODE DYNAMIC RAM 36i 1M > 36 J O M BIT Max. Access Type name Load memory time Outward dimensions Data sheet W X H X D (mm) page 107.95 x 31.65 x 7 3 /1 3 (ns) MH1M36BU J-75 ★ 75 M5M44400BTP, R T x 4 MH1M36BU J-85	OCR Scan	MH1M36BU M5M44400BTP, M5M41000BVP, 37748736-BIT 1048576-WORD 36-BIT) MH1M36BUJ 2164 dynamic ram	PDF
Untitled Abstract: No abstract text available Text: FUJITSU November 1990 Edition 2.0 DATA SHEET M B 8 1 C 1 0 0 1 A - 70U-80U ‘ 10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CM OS 1M x 1 B it Nibble Mode DRAM The Fujitsu M B81C1001A is a CM O S, fully decoded dynam ic RAM organized as 1,048,576 words x 1 bit. The M B81C1001A has been designed for mainframe	OCR Scan	70U-80U B81C1001A DIP-18P-M04 MBS1C100C1001A-10L 24-LEAD FPT-24P-M04) F24020S-2C MB81C1001A-70L	PDF

eprom 2904 Abstract: L 4440 72-Pin SO-DIMM Text: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.	OCR Scan	512kx8512kx81Mx4-- HM62W8512A HM628512A HM628512 HM674100H HM671400H HM62V8128B HM62V8128 HM62W1664HB HM62W1664H eprom 2904 L 4440 72-Pin SO-DIMM	PDF
cm c013 Abstract: LT 1910 mb8l ZIP-20P-M02 Text: FUJITSU November 1990 Edition 2.0 MB81C1001A-70U-80U-10L CMOS 1,048,576 BIT NIBBLE MODE DYNAMIC RAM CMOS 1M x 1 Bit Nibble Mode DRAM T h e F u jitsu M B 8 1 C 1 0 0 1 A is a C M O S , fu lly d e c o d e d d y n a m ic R A M o rg a n iz e d a s 1,0 4 8 ,5 7 6 w o rd s x 1 bit. T h e M B 8 1 C 1 0 0 1 A h a s b e e n d e s ig n e d fo r m a in fra m e	OCR Scan	MB81C1Ã 1A-70U-80U-10L MB81C1001A U881C1001A MB81C1001A-70 MB81C1001A-80L cm c013 LT 1910 mb8l ZIP-20P-M02	PDF
DRAM 2164 Abstract: No abstract text available Text: PRELIMINARY MT4LC1 M16C3 S X 16 DRAM 1 MEG l^ ic n o N 1 M E G x 1 6 DRAM DRAM 3.3V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES PIN ASSIGNMENT (Top View) • JED EC- and industry-standard x l6 tim ing, functions, pinouts and packages • I ligh-perform ance CM OS silicon-gate process	OCR Scan	M16C3 024-cycle 44/50-Pin DRAM 2164	PDF
Untitled Abstract: No abstract text available Text: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series	OCR Scan	512kx8512kx8r HM62W8512A HM628512A HM628512 HM6741Q0H HM671400H HM62V8128B HM62V8128 HM62W1664HB HM62W1664H	PDF
eprom 2904 Abstract: 4502 C DRAM 64kx16 Text: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —	OCR Scan	128kx8n 128kX 128kx8Type HM62W8512A HM628512A HM628512 HM674100H HM671400H HM62V8128B HM62V8128 eprom 2904 4502 C DRAM 64kx16	PDF
Untitled Abstract: No abstract text available Text: MT4C1670/1 L 64K X 16 DRAM \|U \|IC =R O N 64K x 16 DRAM STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH FEATURES PIN ASSIGNMENT Top View • Industry standard x l6 pinouts, tim ing, functions and packages • High-perform ance, CM OS silicon-gate process	OCR Scan	MT4C1670/1 MT4C1670 MT4C1671	PDF
MT4C1670 Abstract: No abstract text available Text: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages	OCR Scan	DD0HS21 MT4C1670/1 MT4C1670 MT4C1671 225mW----------- DDD4S36	PDF
27C256AG Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series	OCR Scan	512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A	PDF
Intel 2164 Abstract: 2164 dynamic ram 2164B-12 2164B-15 Text: 2164B 65,536 X 1-BIT DYNAMIC RAM WITH PAGE MODE L erformance Range 2164B-12 2164B-15 • TTL Compatible Inputs and Output r a c c a c t RC 120 ns 150 ns 60 ns 75 ns 220 ns 260 ns ■ Schmitt Triggers on all Input Control Lines ■ Page Mode Capability ■ RAS-Only and Hidden Refresh	OCR Scan	2164B 2164B-12 2164B-15 16-Pin 2164B 2164B. 16-LEAD Intel 2164 2164 dynamic ram	PDF
intel 8288 Abstract: 8203 intel dram 2164 8203A Text: intei ARTICLE REPRINT AR-197 JANUARY, 1982 e < $ c p < A <F ? * <f/ C opyright b y C om puter D e sig n PubJtshmg Co. C January, 1962 All Righ ts R e se rve d Reprinted b y Perm ission <C - V 3-176 ORDER N UM BER: 210378 BETTER PROCESSOR PERFORMANCE VIA GLOBAL MEMORY	OCR Scan	AR-197 intel 8288 8203 intel dram 2164 8203A	PDF

2164 DRAM Search Results

2164 DRAM Result Highlights (5)

2164 DRAM Datasheets Context Search

BP 109

Untitled

Untitled

Core8051

IC 4822

actel smart fusion

R5F562N8

Untitled

Untitled

information applikation

BA5 marking

30 pin SIP dram memory

2164 dynamic ram

Untitled

eprom 2904

cm c013

DRAM 2164

Untitled

eprom 2904

Untitled

MT4C1670

27C256AG

Intel 2164

intel 8288