2110 - 2170MHZ POWER MODULE Search Results

EMC21L1004GN

Abstract: EUDYNA 26841 2110 - 2170mhz power module
Contextual Info: Eudyna GaN-HEMT 10W Preliminary EMC21L1004GN High Voltage - High Power GaN-HEMT Power Amplifier Module FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 28.5dB typ. at Pout=22dBm(Avg.) ・Broad Frequency Range : 2110 to 2170MHz ・Proven Reliability

QPP-301

Contextual Info: QPP-301 120W, 2110-2170MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-301 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The

QPP-302

Contextual Info: QPP-302 120W, 2110-2170MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-302 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are

XEMOD

Abstract: 2090-2190MHz QPP-305 H1182
Contextual Info: QPP-305 10W, 2110-2170MHz Driver Amplifier Preliminary QuikPAC Module Data General description: Features: The QPP-305 QuikPAC RF power module is a two stage Class AB amplifier designed for use as a driver in linear RF power amplifiers. The power transistors are fabricated using Xemod’s

transistor 13002

Abstract: 13002 power transistor transistor 13002 TO 05 QPP-303 Class A power amplifiers transistor w 13002
Contextual Info: QPP-303 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-303 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power

5W amplifier tone

Abstract: QPP-304
Contextual Info: QPP-304 25W, 2110-2170MHz Class AB Driver Stage QuikPAC Module Data General description: Features: The QPP-304 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver stage of linear RF power amplifiers for cellular base stations. The power transistors are

QPP-310

Abstract: ldmos 3g xemod
Contextual Info: QPP-310 180W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-310 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of RF power amplifiers in 3G CDMA base stations. The power

QPP-310

Abstract: QPP-311
Contextual Info: QPP-311 180W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-311 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of RF power amplifiers in 3G CDMA base stations. The power

XD010-35S

Abstract: H1182
Contextual Info: PRELIMINARY QuikPAC Module Data XD010-35S 10W, 2110-2170MHz CDMA Driver Amplifier General description: Features: The XD010-35S QuikPAC 10W power module is a 2-stage Class A/AB amplifier module for use in the driver stages of CDMA RF power amplifiers for cellular base stations. The power transistors are

QPP-308

Contextual Info: QPP-308 60W, 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-308 QuikPAC RF power module is a Class AB amplifier stage designed for use in the driver and output stages of linear RF power amplifiers for cellular base stations. The power transistors are

transistor 10mhz 60w

Abstract: transistor 38W 12.5W bypass transistor QPP-307
Contextual Info: QPP-307 60W; 2110-2170MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-307 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the driver or output stage of linear RF power amplifiers for cellular base stations.

T0311QZ1950

Contextual Info: RFDpj06/012 Sep.15,2006 To: Qualcomm Inc. PRELIMINARY SPECIFICATIONS OF TRANSMITTER MODULE P/N : T0311QZ1950 D/N : RFDpj06/012 CUSTOMER’S APPROVAL CUSTOMER : . APPROVED BY : . DATE : . NOTES : . The above products are designed, developed and manufactured as contemplated for general use,

SP10T

Abstract: GSM400 DCS 1800 RX SAW Filter MEMS RF switch CAPACITORS 2110 - 2170mhz power module RFMD LTE Band 40
Contextual Info: RF1293 SWITCH FILTER MODULE WITH FIVE LINEAR 3G/4G PATHS Package Style: 21-pin, 3.2 mm x 3.5 mm x 1.0 mm RF1293 GSM DCS/ PCS Rx Features         GSM 900 Rx Excellent insertion loss and isolation performance Five linear paths offer band

Resistor mttf

Abstract: AP512 AP512-PCB JESD22-A114 UMTS-band power module POWER MODULE TM 39 wj model marking code
Contextual Info: AP512 The Communications Edge TM UMTS-band 8W HBT Amplifier Module Product Features • 2110 – 2170 MHz • 28.5 dB Gain • -55 dBc ACLR @ 28 dBm W-CDMA linear power • +39 dBm P1dB • +12 V Single Supply • Power Down Mode • Bias Current Adjustable

CXM3558ER

Abstract: SP10T 6040MHz IC TX-2 SONY INDUCTOR SP10T switch VQFN-26P-01 2110 - 2170mhz power module cxm* sony
Contextual Info: SP10T Antenna Switch Module 4TRx/2Tx/4Rx for GSM and UMTS/CDMA Multi Mode Handset CXM3558ER Description The CXM3558ER is a SP10T antenna switch module for GSM and UMTS/CDMA multi-mode handset. The CXM3558ER has a built-in dual low pass filter and a +1.8V CMOS compatible decoder.

P0632103H

Abstract: trimmer electron
Contextual Info: Preliminary 02.05.28 P0632103H 2.1 GHz band ♦ Features • • • • 2.1 GHz frequency band Typical 33 dBm output power Low power consumption 5.5 W typ. Excellent IM3 =-70 dBc@Pout=10 dBm S.C.L. • • • • Typical 22 dB power gain Low gain deviation

TX1824

Contextual Info: RF8888 Preliminary SP10T ANTENNA SWITCH MODULE TRIBAND GSM, PENTABAND UMTS Package Style: Laminate, 3.0mmx3.8mmx0.85mm RF8888 GSM Rx1 GSM Rx2 Features   GSM Rx3 Very Low IL and High Isolation: 1dB IL: 2.17GHz GSM TRx 1.05dB IL: 1.91GHz GSM Tx HB 25dB Isolation: Between all TRx

Coexistence of GSM, WCDMA and LTE

Abstract: MICRO TX1 HDR2X3 RF8888 LTE filter band 13 tx-2 2200 26PIN SP10T GSM1800 GSM900
Contextual Info: RF8888 Preliminary SP10T ANTENNA SWITCH MODULE TRIBAND GSM, PENTABAND UMTS Package Style: Laminate, 3.0mmx3.8mmx0.85mm RF8888 GSM Rx1 GSM Rx2 Features          GSM Rx3 Very Low IL and High Isolation: 1dB IL: 2.17GHz GSM TRx 1.05dB IL: 1.91GHz GSM Tx HB

MAT-21-1038

Contextual Info: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2810MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2810MHz VCC1 Features Mode Pin to Switch the Attenuation Slope NC MODE VCC2 VREF2 VCC3 28 2 Voltage Variable Attenuator 24 RFOUT

Contextual Info: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2810MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2810MHz VCC1 Features Mode Pin to Switch the Attenuation Slope NC MODE VCC2 VREF2 VCC3 28 2 Voltage Variable Attenuator 24 RFOUT

CXM3641ER-T2

Contextual Info: SP7T+SP7T Diversity Antenna Switch with MIPI Interface CXM3641ER Description The CXM3641ER is a SP7T+SP7T middle power switch with an integrated MIPI controller for wireless communication system. The Sony GaAs Junction gate pHEMT JPHEMT MMIC process is used for low insertion loss

ACX Multilayer Chip

Abstract: BF2520 ACX filter Bandpass Filter GHz
Contextual Info: ACX Advanced Ceramic X BF 2520 Series Multilayer Chip Band-Pass Filters Features ™Ultra small SMD type with low loss at passband and high attenuation at stop-band. Applications ™2.4GHz WLAN, Home RF, Bluetooth Modules, etc. Specifications Freq. Range MHz

Contextual Info: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2700MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2700MHz VCC1 Features „ Frequency Range 400MHz to 2700MHz „ Mode Pin to Switch the Attenuation Slope „ Gain = 25dB Typical „

LQP03TN10NH02D

Abstract: rfmd 3807 LQG15HN27NJ02D
Contextual Info: RFVA0016 RFVA0016Analog Controlled Variable Gain Amplifier 400MHz to 2700MHz ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER 400MHz TO 2700MHz VCC1 Features „ Frequency Range 400MHz to 2700MHz „ Mode Pin to Switch the Attenuation Slope „ Gain = 25dB Typical „