2108 NPN TRANSISTOR Search Results

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSR1108 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =A1KQ., R2=22K£i) • C om plem ent to K S R 2108 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

2108 npn transistor

Abstract: 2108H crouzet 87 664
Contextual Info: 21/03/2012 www.crouzet.com CP2: 2108/2108H 2108 Part number 87610340 \ 8 or 6-figure display, height 7 mm \ Totalizer: - 7 kHz and 40 Hz inputs - Max. counting capacity 99,999,999 impulses Hour counter/chronometer: - Start/stop/ inputs - 4 time ranges: 99,999.9 hours - 99,999.9 min

2108H

Abstract: 2108 npn transistor iec 255-4 831 transistor 2108 counter cp2 C 829 transistor
Contextual Info: Totalizers, LCD, 24 x 48 Operating characteristics ● 87 610 340 1 87 610 440 2 Display 87 610 340 2108 87 610 440 (2108H) CP2 ● CP2 R 2 R This dot indicates capacity overload Terminal markings and connections 2108 Terminals : 1 - Reset input 2 - Enable Reset

crouzet millenium 1 front panel program

Abstract: crouzet millenium 2 PROGRAMMING Crouzet Millenium 2 millenium 3 crouzet crouzet millenium 1 2108H millenium 2 crouzet crouzet millenium 3 PROGRAMMING 89750101 Crouzet Millenium
Contextual Info: Crouzet Counters, Controllers and Proximity Sensors 4141 Series Counters Millenium Micro Controller Simulation of program with PC software. Standard application programs available on the Crouzet website at www.crouzet.com. c c c c Program Protection by 4 Digit Password

2108 npn transistor

Contextual Info: COUNT/RATE COUNT/RATE 2108 SERIES TOTALIZING COUNTER • 8 Digit 7mm High LCD Display • Replaceable Lithium Battery - 8 Year Life • Compact Size 24 x 48mm .95˝ x 1.89˝ Front Panel 37.5mm (1.48˝) Depth C UL US LISTED GENERAL FEATURES: WIRING: The 2108 Series is a totalizing counter housed in a DIN-sized (24 x 48mm)

2108H

Abstract: 2108 npn transistor 2108-h
Contextual Info: COUNT/RATE COUNT/RATE 2108H SERIES ELAPSED TIME INDICATOR • 6 Digit .3˝ High LCD Display • 4 Selectable Time Ranges – Hours, 1/10 Hours – Minutes, 1/10 Minutes – Seconds, 1/10 Seconds – Hours, Minutes, Seconds C UL US LISTED GENERAL FEATURES:

BFW92

Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,

Contextual Info: 2SC1923 SEMICONDUCTOR forward international b u c t r q n k s ltd . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY AMPLIFIER APPLICATIONS, FM,RF,M3XJF AMPLIFIER APPLICATIONS. Package: TO-92 * Small Reverse Transfer Capacitance:Cr^=0,7pF TYP,

Contextual Info: ^£.mi- 2onauctoi l/~\ One. £07 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BUV20 NPN MULTI - EPITAXIAL POWER TRANSISTOR FEATURES • HIGH CURRENT • FAST SWITCHING • HIGH RELIABILITY APPLICATIONS

thermistor 10 SP

Abstract: 275-217 Diode 1N40 12 volt relay SPDT relay 12 Volt 1N4001 RELAY 47K variable resistor Q1 2N3904 276-007 2N3904
Contextual Info: www.thermistor.com Temperature Controller POWER SUP PLY R1 47K RT1 TIVE POSI U1A 1 3 + 2 C1 FD M 2N3904 typ 10 ical 1 Meg ITIVE R4 PSE OLECT VALU WER E PLY 2 K1 5 WE PO PLY UP RS C10MFD 1 DT ER 2 R 1 TO RT MIS ER TH 3 + - EN OP ED OS CL 8 8 4 4 1 2 3 N O MM

K1118

Abstract: MJ3029 transistor k 1119 transistor K 3532 d 1669 transistor MJ2955 300 watts amplifier MJ2955A he01 Ic as20
Contextual Info: M Q T O R C L A SC XSTRS/R F 12E D | b3 b 7 E 5 4 0084*177 3 | M J2955 — MOTOROLA S e e P g r 3 -6 M J2955A — SEMICONDUCTOR See P g .3 -9 TECHNICAL DATA MJ3029 NPN SILICON HIGH-VOLTAGE TRANSISTOR 5 AMPERE POWER TRANSISTOR NPN SILICON . . . designed for T V horizontal and vertical deflection amplifier

gd 361 transistor

Abstract: MOTOROLA 2N3902 2N3902
Contextual Info: MOTOROLA SC X S T R S /R F 15E D | b3b?2S4 QOñ45Q5 b | T - MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3902 3.5 AMPERE HIGH VOLTAGE NPN SILICON TRANSISTORS POWER TRANSISTORS NPN SILICON . . . designed for use in high-voltage inverters, converters, switching

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCP53T1 PNP Silicon E pitaxial Transistor Motorol« Pr*f*rr*d D*vlca This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed

2108 npn transistor

Abstract: TRANSISTOR D 471 2PC945P
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 2PC945 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 26 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC945 FEATURES PINNING

2108 npn transistor

Abstract: 2PC1815 TRANSISTOR D 471
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 28 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 PINNING FEATURES

bc517

Abstract: StR 40000 or transistor transistor BC517
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA

marking code IC .ztz

Abstract: ZtZ MARKING PUMX1 marking ztz sot363
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 PUMX1 NPN general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 1999 Apr 14 Philips Semiconductors Preliminary specification NPN general purpose double transistor

BF585

Abstract: BF587 BF588 BP317 sot128b
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors BF585; BF587 FEATURES

str 6707

Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF570 NPN medium frequency transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN medium frequency transistor

BFV469

Abstract: transistor NPN 3474 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor Product specification Supersedes data of 1997 Jun 20 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistor BFV469 FEATURES PINNING • High transition frequency

Bf240

Abstract: transistor d 2333 2108 npn transistor Transistor B 886 NPN C 5344 transistor NPN 3474 str 6707 BF240 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BF240 NPN medium frequency transistor Product specification Supersedes data of 1998 Dec 02 1999 Apr 21 Philips Semiconductors Product specification NPN medium frequency transistor BF240 FEATURES PINNING

BP317

Abstract: PMSTA42 PMSTA43 PMSTA92 PMSTA93
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D187 PMSTA42; PMSTA43 NPN high-voltage transistors Product specification Supersedes data of 1997 Jun 19 1999 May 21 Philips Semiconductors Product specification NPN high-voltage transistors PMSTA42; PMSTA43

ED-1502C

Abstract: ED1502 ED1502C ED1502D ED1502E npn general purpose transistors application BP317 ED1502B
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 ED1502 NPN general purpose transistor Product specification Supersedes data of 1997 May 01 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor ED1502 FEATURES PINNING