KTY 110
Abstract: KTY 11-6 Q62705-K245 kty 110 15 KTY 21-6 transistor K246 KTY 11-7 Q62705-K334 k246 Q62705-K259
Text: Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package KT 110, KT 210, KTY 11, KTY 21 Features • Temperature dependent Resistor with Positive Temperature Coefficient • Miniature plastic package for very small thermal time constants
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Q62705-K245
Q62705-K247
Q62705-K334
Q62705-K258
Q62705-K259
FC40/PP7)
KTY 110
KTY 11-6
Q62705-K245
kty 110 15
KTY 21-6
transistor K246
KTY 11-7
Q62705-K334
k246
Q62705-K259
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2SA821
Abstract: No abstract text available
Text: 2SA821 -0.03A , -210 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Breakdown Voltage Low Transition Frequency G A 2SA821-P 2SA821-Q 82~180
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2SA821
2SA821-P
2SA821-Q
2SA821-N
14-Feb-2011
-150V,
2SA821
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TRANSISTOR bf493
Abstract: bf493 BF491 BF492
Text: BF491 THRU BF493 PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW TO-92 .210 5.33 .170(4.32) .205(5.20) .175(4.45) 3 2 1 .082(2.082) .50(12.7MIN.) .078(1.982) .022(0.55)
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BF491
BF493
625mW
BF492
TRANSISTOR bf493
bf493
BF491
BF492
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2SA821
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210
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2SA821
-150V,
2SA821
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datasheet of ic 555
Abstract: IC 555 2SA821
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA821 TRANSISTOR PNP TO—92 FEATURES Power dissipation PCM : 0.25 W（Tamb=25℃） Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range
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2SA821
O--92
270TYP
050TYP
datasheet of ic 555
IC 555
2SA821
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2SA821S
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92S Plastic-Encapsulated Transistors 2SA821S TRANSISTOR PNP TO-92S 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V
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O-92S
2SA821S
O-92S
-150V,
2SA821S
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Untitled
Abstract: No abstract text available
Text: Package Drawings and Dimensions 8 Lead Plastic Dual Inline Package PDIP – .300" Body Width Inches Symbol Notes: Millimeters Notes Min. Max. Min. Max. A A1 — .015 .210 — — .38 5.33 — A2 B B1 C .115 .014 .045 .008 .195 .022 .070 .014 2.93 .36 1.14
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5M-1982.
O-263
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2SA821S
Abstract: No abstract text available
Text: 2SA821S 2SA821S TO-92S TRANSISTOR PNP 1. EMITTER FEATURES 2. COLLECTOR Power dissipation PD: 0.25 3. BASE W (Tamb=25℃) Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SA821S
O-92S
-150V,
2SA821S
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2SA821
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range
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2SA821
-150V,
2SA821
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2SA821
Abstract: No abstract text available
Text: 2SA821 2SA821 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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2SA821
-150V,
2SA821
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smd transistor 2xX
Abstract: smd TRANSISTOR sot-23 a2 marking r25 sot23 KTY 10-6 transistor Kty 10.6 SOT R25 smd sot-23 code marking 106 KT 100 tube KTY 19M SMD transistor 2x sot 23
Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F
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OT-23
BSS303
19-6M/Z
M10x1
1/8x27
GMX05639
smd transistor 2xX
smd TRANSISTOR sot-23 a2
marking r25 sot23
KTY 10-6
transistor Kty 10.6
SOT R25
smd sot-23 code marking 106
KT 100 tube
KTY 19M
SMD transistor 2x sot 23
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KTY 110
Abstract: KTY 19M KTY 10-6 KTY 11-6 smd marking 6z KT 209 kty 1000 KTY 88 marking r25 sot23 KTY 10-7
Text: Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 16-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-x KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C – 60 F to 300 F
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OT-23
BSS303
19-6M/Z
M10x1
1/8x27
GMX05639
KTY 110
KTY 19M
KTY 10-6
KTY 11-6
smd marking 6z
KT 209
kty 1000
KTY 88
marking r25 sot23
KTY 10-7
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NTE107
Abstract: NPN Transistor TO92 NPN Silicon Epitaxial Planar Transistor to92 equivalent nte107
Text: NTE107 Silicon NPN Transistor UHF Oscillator for Tuner Description: The NTE107 is a silicon NPN planar epitaxial transistor in a TO92 type package designed specifically for high frequency applications. This device is suitable for use as an oscillator in UHF television tuners.
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NTE107
NTE107
100MHz
60MHz,
NPN Transistor TO92
NPN Silicon Epitaxial Planar Transistor to92
equivalent nte107
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npn 60V 600mw
Abstract: NTE2672 voltage 15v,collector current 40mA VEBO-15V
Text: NTE2672 Silicon NPN Transistor High Gain, Low Frequency, General Purpose Amp TO92 Type Package Features: D High DC Current Gain: hFE = 800 to 3200 D Low Collector−Emitter Saturation Voltage: VCE sat = 0.5V Max D High Collector−Base Voltage: VEBO ≥ 15V
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NTE2672
100mA,
npn 60V 600mw
NTE2672
voltage 15v,collector current 40mA
VEBO-15V
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NTE2341
Abstract: npn darlington TO92 NTE2342
Text: NTE2341 NPN & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.
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NTE2341
NTE2342
NTE2341
500mA,
100MHz
npn darlington TO92
NTE2342
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to92 darlington
Abstract: nte232
Text: NTE232 Silicon PNP Transistor Darlington Amplifier, Preamp Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.
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NTE232
NTE232
100mA,
50MHz
100MHz
to92 darlington
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KTY 110
Abstract: kty 110 15 KTY 11-6 to92 mini Q62705-K332 KT 117
Text: SIEM ENS Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package KT 110, KT 210, KTY 11, KTY 21 Features Temperature dependent Resistor with Positive Temperature Coefficient Miniature plastic package for very small thermal time constants
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Q62705-K332
Q62705-K245
Q62705-K246
Q62705-K247
Q62705-K334
Q62705-K258
Q62705-K259
Q62705-K260
FC40/PP7)
KTY 110
kty 110 15
KTY 11-6
to92 mini
KT 117
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kty 110 15
Abstract: No abstract text available
Text: SIEMENS Silicon Spreading Resistance Temperature Sensor in Miniature Leaded Plastic Package K T 110, KT 210, KTY 11, KTY 21 Features • Temperature dependent Resistor with Positive Temperature Coefficient • Miniature plastic package for very small thermal time
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Q62705-K332
Q62705-K245
Q62705-K246
Q62705-K247
Q62705-K334
Q62705-K258
Q62705-K259
Q62705-K260
FC40/PP7)
KTY11,
kty 110 15
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Untitled
Abstract: No abstract text available
Text: ED42_ J21 ED47_ _21_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S C R / D Í O d e IS O lS t & d POW-R-BLOK Module 210 Amperes/600-2000 Volts OUTLINE DRAWING _J T \_ Ï Ï T ED42 21, ED47 21 SCR/Diode Isolated
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Amperes/600-2000
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ST72A
Abstract: ST76A ST70A st74a SN 0727 TO 92 BS170 Field Effect Transistors 2N7000 TO-92 n-channel fet to-92 BST100
Text: Small Signal Leaded Devices Field Effect Transistors D -M O S FET Pkg Type ft yfs typ (mA/V) VGS (th) (V) *on max (ns) toff max (ns) 500 120 500 50 50 50 50 50 175 175 250 250 300 300 300 300 250 250 500 300 250 300 750 300 210 150 2.5 15 2.5 15 25 25 25
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2N7000
BS107
BS170
BSD212
BSD213
SD214
BSD215
O-92VAR.
ST72A
ST76A
ST70A
st74a
SN 0727
TO 92 BS170
Field Effect Transistors
2N7000 TO-92
n-channel fet to-92
BST100
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2SA821
Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
Text: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5
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2SA806,
2SA821
2SA805,
2SA820
2SA802,
2SA832
2SA805
2SA806
2SA832
2sa805a
toyo
10KO
2SA802
2SA820
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marking 4p sot23
Abstract: smd marking 271 Sot smd transistor marking n5
Text: Infineon tech n o Io g i e s Silicon Temperature Sensors KT 100 KT 110 KT 130 KT 210 KT 230 KTY 1 6-6 KTY 10-x KTY 11-x KTY 13-x KTY 21-X KTY 23-x KTY 19-6 Features • • • • • • • • Temperature dependent resistor with positive temperature coefficient
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OT-23
E35b05
G1342b4
GPD05638
fl23Sb05
BSS303
fl235bDS
marking 4p sot23
smd marking 271 Sot
smd transistor marking n5
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Untitled
Abstract: No abstract text available
Text: T em ic J/SSTJ210 Series S e m i c o n d u c t o r s N-Channel JFETs J210 J211 J212 SSTJ211 SSTJ212 Product Summary Part Number V G S off (V ) V ( b r )G SS M i n ( V ) gfe Min (mS) Idss Min(mA) 3 210 -1 to -3 -2 5 4 2 J /S S T J 2 U - 2 .5 to - 4 .5 -2 5
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J/SSTJ210
SSTJ211
SSTJ212
S-52428--Rev.
14-Apr-97
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CK77
Abstract: 04831
Text: PACKAGE OUTLINES TO-5 0 .3 3 5 - 0 3 7 0 PIN T 1 E 0 .1 0 0 2 6 C 2 .5 4 0 3 0.200 / 15 0 8 0 ) YV ft (0 .4 0 6 - 0.4831 (0 2 2 9 - 3 . 1 7 5 ) T O - 18 0 .2 0 9 - 0 21 9 (5 3 0 9 - 5 5 6 3 ) 0 17 8 - 0.191 0 . 1 8 8 - 0 210 (4 .5 2 1 - 4 .8 5 1 ) (4 7 7 5 - 5 3 3 4 )
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O-116
CK77
04831
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