20N1 Search Results

20N1 Result Highlights (5)

Part	Manufacturer	Description
TRS20N120HB	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 20 A, 2 in 1, TO-247
NP20N10YDF-E1-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
NP20N10YDF-E2-AY	Renesas Electronics Corporation	Power MOSFETs for Automotive
UPD120N15TA-A	Renesas Electronics Corporation	3 Terminal Regulators, MM, /
UPD120N18T1B-E1-AZ	Renesas Electronics Corporation	3 Terminal Regulators, POMM, /

20N1 Price and Stock

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Infineon Technologies AG IQD020N10NM5ATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IQD020N10NM5ATMA1	Digi-Reel	4,985		1	1 $4.74 10 $3.386 100 $4.74 1000 $2.07812 10000 $2.07812	Buy Now
	IQD020N10NM5ATMA1	Cut Tape	4,985		1	1 $4.74 10 $3.386 100 $4.74 1000 $2.07812 10000 $2.07812	Buy Now
Mouser Electronics	IQD020N10NM5ATMA1		4,183			1 $4.64 10 $3.48 100 $2.55 1000 $2.08 10000 $2.07	Buy Now
Newark	IQD020N10NM5ATMA1	Cut Tape	4,770		1	1 $4.86 10 $3.53 100 $2.66 1000 $2.17 10000 $2.17	Buy Now
Infineon Technologies AG IPT020N10N5ATMA1 MOSFET N-CH 100V 31A/260A 8HSOF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPT020N10N5ATMA1	Cut Tape	2,006		1	1 $4.58 10 $3.024 100 $4.58 1000 $1.64633 10000 $1.64633	Buy Now
	IPT020N10N5ATMA1	Digi-Reel	2,006		1	1 $4.58 10 $3.024 100 $4.58 1000 $1.64633 10000 $1.64633	Buy Now
	IPT020N10N5ATMA1	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $1.62425	Buy Now
Rochester Electronics	IPT020N10N5ATMA1		139,602		1	1 $1.8 10 $1.8 100 $1.69 1000 $1.53 10000 $1.53	Buy Now
Chip 1 Exchange	IPT020N10N5ATMA1		54,392			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	IPT020N10N5ATMA1		15,560			1 - 10 - 100 $1.9444 1000 $1.6667 10000 $1.6667	Buy Now
Infineon Technologies AG IPTC020N13NM6ATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPTC020N13NM6ATMA1	Digi-Reel	618		1	1 $8.62 10 $6.223 100 $8.62 1000 $4.1879 10000 $4.1879	Buy Now
	IPTC020N13NM6ATMA1	Cut Tape	618		1	1 $8.62 10 $6.223 100 $8.62 1000 $4.1879 10000 $4.1879	Buy Now
Mouser Electronics	IPTC020N13NM6ATMA1		1,183			1 $8.23 10 $5.9 100 $4.36 1000 $4 10000 $3.93	Buy Now
Littelfuse Inc IXFT320N10T2 MOSFET N-CH 100V 320A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT320N10T2	Tube	303		1	1 $19.88 10 $19.88 100 $14.21 1000 $19.88 10000 $19.88	Buy Now
Newark	IXFT320N10T2	Bulk	30		1	1 $18.38 10 $15.27 100 $12.15 1000 $11.91 10000 $11.91	Buy Now
Littelfuse Inc IXFK420N10T MOSFET N-CH 100V 420A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK420N10T	Tube	222		1	1 $18.74 10 $18.74 100 $18.74 1000 $18.74 10000 $18.74	Buy Now
Newark	IXFK420N10T	Bulk	275		1	1 $18.04 10 $14.1 100 $12.02 1000 $12.02 10000 $12.02	Buy Now

Find more 20N1 price and stock on Findchips.com

20N1 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
20N10	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
20N100D2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N100E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
20N120E2	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

20N1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IC IGBT 20N120 Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1 Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings	Original	20N120 20N120 O-247 IXDH20N120D1 IC IGBT 20N120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1	PDF
Untitled Abstract: No abstract text available Text: IXGH 20N100 IXGT 20N100 IGBT VCES IC25 VCE sat tfi(typ) = 1000 V = 40 A = 3.0 V = 280 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient	Original	20N100 O-247 O-268	PDF
20N100 Abstract: No abstract text available Text: IGBT IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
20n120 Abstract: induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGP 20N120B IXGP 20N120BD1 = 1200 = 40 = 3.4 = 160 tfi(typ) Preliminary Data Sheet V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	20N120B 20N120BD1 IC110 O-220 6A/DSEC16-06A 20n120 induction heating cooker igbt induction cooker siemens igbt 20A 20N120BD1 induction cooker application notes	PDF
IC IGBT 20N120 Abstract: IXDH20N120AU1 ixdh20n120au 20N120 Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	20N120 O-263 IXDH20N120AU1 IC IGBT 20N120 IXDH20N120AU1 ixdh20n120au	PDF
MDD25 Abstract: 255-16N1 MDD255 ixys MCC 700 Text: MDD 255 High Power Diode Modules IFRMS = 2x450 A IFAVM = 2x270 A VRRM = 1200-2200 V 3 VRSM V VRRM V Type 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 MDD MDD MDD MDD MDD MDD 2 3 2 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 Symbol	Original	2x450 2x270 255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 10Transient 20100203a MDD25 255-16N1 MDD255 ixys MCC 700	PDF
T1125 Abstract: No abstract text available Text: MDO 500 IFRMS = 880 A IFAVM = 560 A VRRM = 1200-2200 V High Power Diode Modules VRSM VDSM VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Symbol 3 2 2 MDO 500-12N1 MDO 500-14N1 MDO 500-16N1 MDO 500-18N1 MDO 500-20N1 MDO 500-22N1 Test Conditions	Original	500-12N1 500-14N1 500-16N1 500-18N1 500-20N1 500-22N1 T1125	PDF
2x520 Abstract: No abstract text available Text: MDD 312 IFRMS = 2x 520 A IFAVM = 2x 310 A VRRM = 1200-2200 V High Power Diode Modules VRRM VDRM V V 1300 1500 1700 1900 2100 2300 1200 1400 1600 1800 2000 2200 Type 3 MDD 312-12N1 MDD 312-14N1 MDD 312-16N1 MDD 312-18N1 MDD 312-20N1 MDD 312-22N1 Test Conditions	Original	312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 312-22N1 2x520	PDF
20N15 Abstract: No abstract text available Text: Capacitive proximity sensors CFDM 20N1500/S35L Capacitive proximity sensors dimension drawing 20 35 9 3,5 22 10 12 4xLED M8 x 1 6 13 8,9 general data photo mounting type shielded nominal sensing distance Sn 5 mm temperature drift ± 15 % +10 . +70 °C	Original	20N1500/S35L 20N15	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N1501/S35L Inductive proximity switch dimension drawing 20 32 7 9 3,5 19 10 10 4xLED 13 M8 x 1 general data photo mounting type shielded nominal sensing distance Sn 5 mm hysteresis 3 . 20 % of Sr output indicator 4 port LED red	Original	20N1501/S35L	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type shielded nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	20N17A3/S35L	PDF

Untitled Abstract: No abstract text available Text: Advanced Technical Data High Voltage IGBT IXGH 20N120B VCES IXGT 20N120B IC25 VCE sat = 1200 = 40 = 3.4 = 160 tfi(typ) Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient	Original	20N120B O-268 O-247 728B1 123B1 065B1	PDF
Untitled Abstract: No abstract text available Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140	PDF
IXGH20N120BD1 Abstract: IXGH 20N120BD1 Text: High Voltage IGBT with Diode VCES IC25 VCE sat IXGH 20N120BD1 IXGT 20N120BD1 tfi(typ) Preliminary Data Sheet Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N120BD1 20N120BD1 IC110 O-247AD O-268 O-247) Fea140 IXGH20N120BD1 IXGH 20N120BD1	PDF
Untitled Abstract: No abstract text available Text: MDD 310 IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V High Power Diode Modules 3 VRSM VRRM V V 900 1300 1500 1700 2100 2300 800 1200 1400 1600 2000 2200 3 Type 1 2 2 1 MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1 Symbol	Original	310-08N1 310-12N1 310-14N1 310-16N1 310-20N1 310-22N1	PDF
Untitled Abstract: No abstract text available Text: Inductive sensors IFFM 20N17A3/S35L Inductive proximity switch dimension drawing 10 LED 32 7 7 19 3,5 10 20 M8 x 1 13 general data photo mounting type flush nominal sensing distance Sn 8 mm hysteresis 3 . 20 % of Sr output indicator LED red electrical data	Original	20N17A3/S35L housi500Â	PDF
20N120D1 Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247 Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C	Original	20N120 20N120D1 ISOPLUS247TM 20080118a 20N120D1 IC IGBT 20N120 20n120 FII30-12E ISOPLUS247	PDF
Untitled Abstract: No abstract text available Text: MDD 255 High Power Diode Modules VRSM V 1300 1500 1700 1900 2100 2300 VRRM V 1200 1400 1600 1800 2000 2200 3 Type 1 2 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Symbol Conditions IFRMS IFAVM TVJ = TVJM 180° sine IFSM TVJ = 45°C;	Original	255-12N1 255-14N1 255-16N1 255-18N1 255-20N1 255-22N1 200-2200V E72873 20121206e	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM	Original	20N120 20N120 O-268 O-247 O-268AA	PDF
Untitled Abstract: No abstract text available Text: IXGA 20N100 VCES IXGP 20N100 IC25 VCE sat IGBT = 1000 V = 40 A = 3.0 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	20N100 O-220AB O-263 728B1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced	OCR Scan	MGW20N 120/D 20N120 MGW20N120/D	PDF

20N1 Search Results

20N1 Result Highlights (5)

20N1 Price and Stock

Infineon Technologies AG IQD020N10NM5ATMA1

Infineon Technologies AG IPT020N10N5ATMA1

Infineon Technologies AG IPTC020N13NM6ATMA1

Littelfuse Inc IXFT320N10T2

Littelfuse Inc IXFK420N10T

20N1 Datasheets (5)

20N1 Datasheets Context Search

IC IGBT 20N120

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20N100

20n120

IC IGBT 20N120

MDD25

T1125

2x520

20N15

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IXGH20N120BD1

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20N120D1

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