AN609
Abstract: IRFBC40A SiHFBC40A 9043-2
Text: IRFBC40A_RC, SiHFBC40A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBC40A
SiHFBC40A
AN609,
20-Apr-10
AN609
9043-2
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AN609
Abstract: IRFI520G
Text: IRFI520G_RC, SiHFI520G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFI520G
SiHFI520G
AN609,
20-Apr-10
AN609
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VBPW34
Abstract: VBPW34S VBPW34SR VBPW 81128
Text: VBPW34S, VBPW34SR Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: GW, RGW VBPW34S • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity
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VBPW34S,
VBPW34SR
VBPW34S
J-STD-020
2002/95/EC
2002/96/EC
VBPW34S
VBPW34SR
18-Jul-08
VBPW34
VBPW
81128
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diode code GW 17
Abstract: VBPW104S
Text: VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBPW104S • Package form: GW, RGW • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity
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VBP104S,
VBP104SR
VBPW104S
VBPW104SR
J-STD-020
2002/95/EC
2002/96/EC
VBP104S
VBP104SR
18-Jul-08
diode code GW 17
VBPW104S
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AN609
Abstract: IRFI510G
Text: IRFI510G_RC, SiHFI510G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFI510G
SiHFI510G
AN609,
20-Apr-10
AN609
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74139m
Abstract: 4139 temperature AN609 IRFBC30A SiHFBC30A 74139
Text: IRFBC30A_RC, SiHFBC30A_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBC30A
SiHFBC30A
AN609,
20-Apr-10
74139m
4139 temperature
AN609
74139
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9014 transistor specification
Abstract: AN609 IRFBE20 SiHFBE20
Text: IRFBE20_RC, SiHFBE20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBE20
SiHFBE20
AN609,
20-Apr-10
9014 transistor specification
AN609
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VBPW34FAS
Abstract: VBPW34
Text: VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES VBPW34FAS • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity
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VBPW34FAS,
VBPW34FASR
VBPW34FAS
J-STD-020
2002/95/EC
2002/96/EC
VBPW34FAS
VBPW34FASR
11-Mar-11
VBPW34
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Untitled
Abstract: No abstract text available
Text: T97 Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT , Hi-Rel COTS, Ultra-Low ESR, Conformal Coated Case FEATURES • High reliability; Weibull failure rate grading available • Surge current testing per MIL-PRF-55365 options available • Ultra-low ESR
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MIL-PRF-55365
2002/95/EC
18-Jul-08
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AN609
Abstract: IRFBC40AS SiHFBC40AS
Text: IRFBC40AS_RC, SiHFBC40AS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC40AS
SiHFBC40AS
AN609,
20-Apr-10
AN609
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AN609
Abstract: IRFBF30 SiHFBF30
Text: IRFBF30_RC, SiHFBF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBF30
SiHFBF30
AN609,
20-Apr-10
AN609
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AN609
Abstract: IRFBE30L IRFBE30S SiHFBE30S
Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBE30S
SiHFBE30S
IRFBE30L
SiHFBE30L
AN609,
20-Apr-10
AN609
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Untitled
Abstract: No abstract text available
Text: PFC375 AC-DC Series Data Sheet Features • RoHS lead-solder-exempt compliant • Greater than 1 million hours demonstrated MTBF • Power Factor Correction PFC meets EN61000-3-2 • Fully-regulated outputs • Main output remote sense • Current Share, Power Fail, and Power Good signals
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PFC375
EN61000-3-2
EN61000-4-2/-3/-4/-5
UL94V-0
MCD10156
20-Apr-10
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AN609
Abstract: IRFBC20L IRFBC20S SiHFBC20L
Text: IRFBC20S_RC, SiHFBC20S_RC, IRFBC20L_RC, SiHFBC20L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC20S
SiHFBC20S
IRFBC20L
SiHFBC20L
AN609,
20-Apr-10
AN609
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9571
Abstract: AN609 IRFBC30
Text: IRFBC30_RC, SiHFBC30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBC30
SiHFBC30
AN609,
20-Apr-10
9571
AN609
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VBPW34FAS
Abstract: VBPW34FASR VBPW VBPW34
Text: VBPW34FAS, VBPW34FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES VBPW34FAS • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 7.5 High radiant sensitivity
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VBPW34FAS,
VBPW34FASR
VBPW34FAS
J-STD-020
2002/95/EC
2002/96/EC
VBPW34FAS
VBPW34FASR
18-Jul-08
VBPW
VBPW34
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AN609
Abstract: IRFBC40 SiHFBC40
Text: IRFBC40_RC, SiHFBC40_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBC40
SiHFBC40
AN609,
20-Apr-10
AN609
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VBP104FAS
Abstract: No abstract text available
Text: VBP104FAS, VBP104FASR Vishay Semiconductors Silicon PIN Photodiode FEATURES VBP104FAS • • • • • Package type: surface mount Package form: GW, RGW Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 Radiant sensitive area (in mm2): 4.4 High radiant sensitivity
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VBP104FAS,
VBP104FASR
VBP104FAS
J-STD-020
2002/95/EC
2002/96/EC
VBP104FAS
VBP104FASR
11-Mar-11
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12V 4A Transformer
Abstract: transformer 220V to 24V 3A PFC375420 20APR1
Text: PFC375 AC-DC Series Data Sheet Features • RoHS lead-solder-exempt compliant • Greater than 1 million hours demonstrated MTBF • Power Factor Correction PFC meets EN61000-3-2 • Fully-regulated outputs • Main output remote sense • Current Share, Power Fail, and Power Good signals
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PFC375
EN61000-3-2
EN61000-4-2/-3/-4/-5
UL94V-0
MCD10156
20-Apr-10
12V 4A Transformer
transformer 220V to 24V 3A
PFC375420
20APR1
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4139 temperature
Abstract: 9571 AN609 IRFBC30AL IRFBC30AS SiHFBC30AL SiHFBC30AS 74139
Text: IRFBC30AS_RC, SiHFBC30AS_RC, IRFBC30AL_RC, SiHFBC30AL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC30AS
SiHFBC30AS
IRFBC30AL
SiHFBC30AL
AN609,
20-Apr-10
4139 temperature
9571
AN609
74139
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SiHFBC30L
Abstract: 5611/M 90430 AN609 IRFBC30L IRFBC30S SiHFBC30S
Text: IRFBC30S_RC, SiHFBC30S_RC, IRFBC30L_RC, SiHFBC30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFBC30S
SiHFBC30S
IRFBC30L
SiHFBC30L
AN609,
20-Apr-10
5611/M
90430
AN609
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9014 transistor specification
Abstract: AN609 IRFBF20 SiHFBF20
Text: IRFBF20_RC, SiHFBF20_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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IRFBF20
SiHFBF20
AN609,
20-Apr-10
9014 transistor specification
AN609
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22106
Abstract: No abstract text available
Text: VBP104S, VBP104SR Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount VBPW104S • Package form: GW, RGW • Dimensions L x W x H in mm : 6.4 x 3.9 x 1.2 • Radiant sensitive area (in mm2): 4.4 • High photo sensitivity
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VBP104S,
VBP104SR
VBPW104S
VBPW104SR
J-STD-020
2002/95/EC
2002/96/EC
VBP104S
VBP104SR
11-Mar-11
22106
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200CT03
Abstract: No abstract text available
Text: TH I S DRAW I NG IS UNPUBLISHED. C O P Y RI G HT 20 RELEASED BY TYCO ELE CTRONICS F OR CORPORATION. ALL PUBLICATION R | GHT S 20 REV I S I O N S LOC RESERVED. LTR DESCRIPTION DWN DATE ECN APVD RELEASED E J AO - 0 5 6 9 - 03 200CT03 SA KA REVISED ECR- I 0 -0 0 5 8 5 7
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200CT03
20APR10
200CT2003
200CT2
3IMAR2000
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