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    208-840 RESISTOR Search Results

    208-840 RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    KA4F3R(0)-T1-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation
    HD1A3M(0)-T1-AZ Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    208-840 RESISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR SMD L3

    Abstract: BLV909
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product specification Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product specification UHF power transistor BLV909 FEATURES PINNING - SOT409B • Emitter ballasting resistors for optimum temperature


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    PDF M3D175 BLV909 OT409B 125002/03/pp16 TRANSISTOR SMD L3 BLV909

    14K621

    Abstract: varistor 10k 471 FNR-14K FNR-10K241 varistor k220 FNR-07K511 25K30 FNR-14K391 varistor k271 FNR20K471
    Text: ZINC OXIDE VARISTOR Are non-linear resistors utilize a semiconductor electronic ceramic element mainly composed of Zinc Oxide and its resistors change as a function of the applied voltage .It s called Varistor or Transient surge absorbers FEATURES 18V~1.8KV


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    PDF 000A/cm2) 000A/cm 1000h 14K621 varistor 10k 471 FNR-14K FNR-10K241 varistor k220 FNR-07K511 25K30 FNR-14K391 varistor k271 FNR20K471

    C6248

    Abstract: No abstract text available
    Text: SPD, Power Conditioning, PF Capacitors and Harmonic Filters Industrial Surge Protection Products 2.1 Surge Protection and Power Conditioning Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Product Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    PDF CVX050/100 HCUE300â CA08100004Eâ V3-T2-77 C6248

    SSD1332

    Abstract: SSD1332T1R1 4202 bd datasheet SSD1332U1R1 7 segment 7433 96x64 dc dc converter 4953 pw125 ram 4532 SB75
    Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1332 Advance Information 96RGB x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without notice.


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    PDF SSD1332 96RGB SSD1332 SSD1332T1R1 4202 bd datasheet SSD1332U1R1 7 segment 7433 96x64 dc dc converter 4953 pw125 ram 4532 SB75

    B621-2

    Abstract: 0/skm 125 ga 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) Units AC, 1 min. DIN 40 040 DIN IEC 68 T.1 1200 1200 500 / 420 1000 / 840 ± 20 3000 – 40 . . .+150 (125) 2 500 7) Class F 40/125/56 V V A A


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    PIR based security system

    Abstract: infrared based security alarm "PIR wiring diagram PIR motion DETECTOR CIRCUIT DIAGRAM PIR datasheet PIR alarm system V0010 pir control 12V electromagnetic relay 74477
    Text: Security Systems Technical Data Dual Detectors EIM/B EIM/DB Description This new series of dual detectors is based on the proven detection principles of the EIM detector, consisting of a logical AND connection between infrared technology and electromagnetic fields.


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    PDF D-69006 D-69123 D0201 PIR based security system infrared based security alarm "PIR wiring diagram PIR motion DETECTOR CIRCUIT DIAGRAM PIR datasheet PIR alarm system V0010 pir control 12V electromagnetic relay 74477

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Jan 25 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 BLF1047 OT541A OT541A) 603516/04/pp11

    BLF1047

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2000 Oct 23 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 OT541A 603516/04/pp11 BLF1047 BP317

    transistor MAR 826

    Abstract: BLF1047 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification 2001 Mar 22 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 PINNING - SOT541A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D390 BLF1047 OT541A 603516/04/pp11 transistor MAR 826 BLF1047 BP317

    UHVR112

    Abstract: No abstract text available
    Text: TH97/10561QM UHVR112 IATF 0060636 SGS TH07/1033 HIGH VOLTAGE ULTRAFAST RECTIFIER DIODE DO - 41 PRV : 1200 Volts Io : 1.0 Ampere FEATURES : * * * * * * TW00/17276EM 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) Glass passivated junction chip High surge current capability


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    PDF TH97/10561QM UHVR112 TH07/1033 TW00/17276EM DO-41 UL94V-O MIL-STD-202, UHVR112

    RGP02-20E

    Abstract: RGP02-12E 0216E
    Text: RGP02-12E // 20E HIGH VOLTAGE FAST RECOVERY RECTIFIERS PRV : 1200 - 2000 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF RGP02-12E DO-41 UL94V-O MIL-STD-202, RGP02-20E 0216E

    RGP0212E

    Abstract: RGP02-12E RGP02-20E
    Text: RGP02-12E // 20E HIGH VOLTAGE PRV : 1200 - 2000 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency


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    PDF RGP02-12E DO-41 UL94V-O MIL-STD-202, RGP0212E RGP02-20E

    SSD1332

    Abstract: transistor 5-2736 lcd 96x64 color 96x64 LCD 96x64 OLED lcd 96x64 lcd 96x64 monochrome CFAL9664B-F-B1 CFAX12864 1.54" 128 x 64 OLED
    Text: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Shown actual size. Crystalfontz Model Number CFAL9664B-F-B1 Hardware Version Revision A Data Sheet Version Revision 1.1 July 2009 Product Pages


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    PDF CFAL9664B-F-B1 com/product/CFAL9664BFB1 CFAL9664B-F-B1 SSD1332 SSD1332 transistor 5-2736 lcd 96x64 color 96x64 LCD 96x64 OLED lcd 96x64 lcd 96x64 monochrome CFAX12864 1.54" 128 x 64 OLED

    SSD1332

    Abstract: lcd 96x64 monochrome transistor 5-2736 SSD1332Z RAMTEX Library ssd1332u1 96x64 LCD 96x64 OLED SSD1332U1R1 CFAL9664B-F-B1
    Text: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Shown actual size. Crystalfontz Model Number CFAL9664B-F-B1 Hardware Version Revision A Data Sheet Version Revision 1.0 February 2009 Product Pages


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    PDF CFAL9664B-F-B1 com/product/CFAL9664BFB1 CFAL9664B-F-B1 SSD1332 SSD1332 lcd 96x64 monochrome transistor 5-2736 SSD1332Z RAMTEX Library ssd1332u1 96x64 LCD 96x64 OLED SSD1332U1R1

    RGP02-12E

    Abstract: RGP02-20E 0212e 0218E
    Text: RGP02-12E // 20E HIGH VOLTAGE FAST RECOVERY RECTIFIERS PRV : 1200 - 2000 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF RGP02-12E DO-41 UL94V-O MIL-STD-202, RGP02-20E 0212e 0218E

    transistor f422

    Abstract: transistor f423 transistor f422 equivalent F422 F421 F423 L442 F924 uPD65 F324
    Text: DATA SHEET CMOS-8L 3 Volt, 0.5-Micron CMOS Gate Array Description: Features: NEC’s CMOS-8L is an optimized true 3-Volt technology, targeted for applications requiring extensive integration, low power and high speed. The CMOS-8L ASICs are ideal for use in applications like


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    RGP02

    Abstract: diode RGP 20 RGP02-12E RGP02-20E
    Text: RGP02-12E // 20E HIGH VOLTAGE FAST RECOVERY RECTIFIERS PRV : 1200 - 2000 Volts Io : 0.5 Ampere DO - 41 FEATURES : * * * * * * * Glass passivated junction High current capability High surge current capability High reliability Low reverse current Low forward voltage drop


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    PDF RGP02-12E DO-41 UL94V-O MIL-STD-202, Dime50 RGP02 diode RGP 20 RGP02-20E

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RGP02-12E // 20E HIGH VOLTAGE


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    PDF RGP02-12E DO-41

    SSD1332

    Abstract: SB950 2BM10000 ssd1332u1 GS23 MAR 609 IMAGES transistor 5-2736 501 display 96x64 OLED OLED 96X64 1.2
    Text: Crystalfontz America, Incorporated GRAPHIC OLED MODULE SPECIFICATIONS Shown actual size. Crystalfontz Model Number CFAL9664B-F-B1 Hardware Version Revision A Data Sheet Version Revision 1.2, August 2010 Product Pages


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    PDF CFAL9664B-F-B1 com/product/CFAL9664BFB1 CFAL9664B-F-B1 SSD1332 SSD1332 SB950 2BM10000 ssd1332u1 GS23 MAR 609 IMAGES transistor 5-2736 501 display 96x64 OLED OLED 96X64 1.2

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information 900 MHz Low Voltage LVDS Clock Synthesizer The MPC9259 is a 3.3V compatible, PLL based clock synthesizer targeted for high performance clock generation in mid-range to high-performance telecom, networking and computing applications. With output frequencies from 50 MHz to 900 MHz and the support of differential LVDS


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    PDF MPC9259/D MPC9259 MPC9259

    MTJG-2-88JX1-FSG-PG

    Abstract: 8P8C RJ45 LED RJ45 SMT magnetics 1000 MTJG-3-885X1-SMT TIA RJ45 plug dimension drawing pin configuration fsd 210 662x 2x2 6p6c
    Text: MODULAR TELEPHONE JACKS MTJ SERIES Adam Technologies, Inc. INTRODUCTION: Adam Tech MTJ series Modular Telephone Jacks are a complete line of PCB and wire leaded jacks which are UL and CSA approved and meet all required FCC rules and regulations. Adam Tech offers


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    PDF 10p10c) MTJG-8-88JX1-FSE-LD-M1 MTJG-2-88JX1-FSG-PG 8P8C RJ45 LED RJ45 SMT magnetics 1000 MTJG-3-885X1-SMT TIA RJ45 plug dimension drawing pin configuration fsd 210 662x 2x2 6p6c

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor, Inc. TECHNICAL DATA Preliminary Information 900 MHz Low Voltage LVDS Clock Synthesizer The MPC92459 is a 3.3 V compatible, PLL based clock synthesizer targeted for high performance clock generation in mid-range to high-performance


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    PDF MPC92459

    B80C 1500M

    Abstract: B380C1500m B380C 1500M
    Text: B40C / B80C / B125C / B250C / B380C 1500M SERIES MINIATURE SINGLE - PHASE SILICON BRIDGE RECTIFIER Voltage - 65 to 600 Volts Current - 1.5 Amperes FEATURES ♦ Plastic package has Underwriters Lab­ oratory Flammability Classification 94V-0 ♦ High case dielectric


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    PDF B125C B250C B380C 1500M MIL-STD-202, B80C 1500M B380C1500m B380C 1500M

    B03-9199E

    Abstract: No abstract text available
    Text: Ah lili ASEA BROWN BOVERI ABB Relays Selection tables for capacitors B03-9199E Page 1 January 1987 Changed since January 1985 Data subject to change without notic • T h e se tables include capacitors used in R X T C C 1 capacitor unit, R X T C B 1 capaci­


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    PDF B03-9199E S-72171