K 1358 fet transistor
Abstract: MAX1679 T101D103-CA 140-103LAG-RBI MAX1879 MAX1879EUA MAX1879EVKIT ZHCS1000 FDC638P FET K 1358
Text: 19-2061; Rev 0; 5/01 NK EVALUATIO IT AVAILA BLE Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and
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MAX1879
MAX1879
K 1358 fet transistor
MAX1679
T101D103-CA
140-103LAG-RBI
MAX1879EUA
MAX1879EVKIT
ZHCS1000
FDC638P
FET K 1358
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T101D103-CA
Abstract: ntc 100-20 K 1358 fet transistor 140-103LAG-RBI T101D103 Fenwal NTC MAX1879 FDC638P MAX1679 MAX1879EUA
Text: 19-2061; Rev 0; 5/01 ABLE KIT AVAIL N IO T A U L EVA Simple, Efficient, 1-Cell Li+ Pulse Charger Features ♦ Simple Design Minimizes Heat The MAX1879 initiates charging in one of three ways: battery insertion, charger power-up, or toggling the THERM pin. Key safety features include continuous voltage and
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MAX1879
MAX1879
T101D103-CA
ntc 100-20
K 1358 fet transistor
140-103LAG-RBI
T101D103
Fenwal NTC
FDC638P
MAX1679
MAX1879EUA
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ic 2061 d
Abstract: 2061 D transistor 2061 D 2061 CDD2061 2061 transistor 2061 2061D
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C) DESCRIPTION SYMBOL VCBO Collector -Base Voltage
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CDD2061
O-220
25deg
C-120
ic 2061 d
2061 D
transistor 2061
D 2061
CDD2061
2061 transistor
2061
2061D
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ic 2061 d
Abstract: CDD2061 2061 D
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON EPITAXIAL POWER TRANSISTOR CDD2061 9AW TO-220 Designed For AF Power Amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)
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CDD2061
O-220
25deg
C-120
ic 2061 d
CDD2061
2061 D
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2061 D
Abstract: PD 2061 A HCF4070BEY SO14-DIP14 2061
Text: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current
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HCF4070
DIP14
HCF4070
DIP14
2061 D
PD 2061 A
HCF4070BEY
SO14-DIP14
2061
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HCF4070B
Abstract: No abstract text available
Text: HCF4070 Quad exclusive OR gate Datasheet − production data Features • Medium-speed operation tPHL = tPLH = 70 ns typ at CL = 50 pF and VDD = 10 V ■ Quiescent current specified up to 20 V ■ 5 V, 10 V and 15 V parametric ratings ■ Input leakage current
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HCF4070
DIP14
HCF4070
DIP14
HCF4070B
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DS33646
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTC2061E6 ADVANCE INFORMATION 12V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SOT26 Features Mechanical Data • • NPN + PNP Combination BVCEO > 12 -12 V • Case: SOT26 • Case Material: Molded Plastic, “Green” Molding Compound
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ZXTC2061E6
AEC-Q101
J-STD-020
MIL-STD-202,
DS33646
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2SC2061
Abstract: la 7820 T103
Text: R O H M CO LTD ' ~ 40E J> 7820= ^ h J7 > y X # /T ran sisto rs GGOSbSS 7 BRHM 2S C 2061 T ^ - a T NPN y «;=!> bÿ>yz$ i^S^liaiiffl/M edium Power Amp. lEpitaxial Planar NPN Silicon Transistor 2SC2CS1 sifW'A'vli-7- • i+ïfi'îJ'jÈH/Diinensions Unit : mm
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2SC2061
700mA
700mA
O-92L
SC-51
T-27-15
2SC2061
la 7820
T103
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2sd2061
Abstract: No abstract text available
Text: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)
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0Q0b037
O-220FP
2SD2061
HU-72-I
2sd2061
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Untitled
Abstract: No abstract text available
Text: ROHM CO LTD ~ 40E » ? a S Û W QQOSb'iS h 7 > V ^ ^ / T r a n s is t o r s 7 HRHN 2S C 2061 % 2 7 -js r - — N P N h 7 > y z $ l+ S ^ ia H ffl/ M e d iu m Power Amp. ¡Epitaxial Planar NPN Silicon Transistor V1-5JViVvIi-y • ii-Jfi'^jilS/Dimensions Unit : mm
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VLN 2003a
Abstract: HP 2061 2SC4455 wo8j "1SV 90"
Text: Ordering number: EN 2814 2SC4455 No.2814 i SAß»YO NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity
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2SC4455
2034/2034A
SC-43
7tlt17D7b
VLN 2003a
HP 2061
2SC4455
wo8j
"1SV 90"
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN 2814 i S A iY O _ 2SC4455 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatu res • Fast switching speed • Low collector saturation voltage • High gain-bandwidth product • Small collector capacity
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2SC4455
2SC4455
0278M
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"to-98" package
Abstract: MPS5172 2N5172 2N6076 PN5172 2n5172 to-92 TO-98 RCA 2N
Text: G E SOLI» STATE DE | 3075DÛ1 0 0 1 7 C]3T 1 | r* s ' -Signal Transistors 2N5172, MPS5172, PN5172,2N6076 Silicon Transistors TO-92 TO-98
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2N5172,
MPS5172,
PN5172,
2N6076
PN5172
2N6076
PN5172)
O-910
"to-98" package
MPS5172
2N5172
2n5172 to-92
TO-98
RCA 2N
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"to-98" package
Abstract: 2N5172
Text: G E SOLI» STATE DE j3fl7SDùl 0 0 1 7 c]3cì 1 | T~- "¿sr Signal Transistors 2N5172, MPS5172, PN5172, 2N6076 Silicon Transistors TO-92 TO-98 The GE/RCA 2N, MPS, PN5172 are NPN and 2N6076 is a
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2N5172,
MPS5172,
PN5172,
2N6076
PN5172
obser10V,
"to-98" package
2N5172
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transistor 2061
Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Text: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59
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711Dfl5b
0D7GQ24
2PD602;
2PD602A
2PB710
2PB710A
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
transistor 2061
2PD602S
2PD602
2PD602A
2PD602AQ
2PD602AR
2PD602Q
2PD602R
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2PB710
Abstract: 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602Q 2PD602R 2PD602S SC59 transistor 2061
Text: Philips Semiconductors 7 1 1 D flE b D D 7 G0 2 4 bSG • P H IN NPN general purpose transistor FEATURES Objective specification 2PD602; 2PD602A PIN CONFIGURATION • Large collector current • Low col lector-emitter saturation voltage. DESCRIPTION H-
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711DflEb
007Q021J
2PD602;
2PD602A
2PB710
2PB710A
VSA314
2PD602Q:
2PD602R:
2PD602S:
2PD602
2PD602A
2PD602AQ
2PD602Q
2PD602R
2PD602S
SC59
transistor 2061
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LB 1001 SANYO
Abstract: 2SC4455 T500
Text: Ordering number:EN 2814 2SC4455 No.2814 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed •Low collector saturation voltage • High gain-bandwidth product • Small collector capacity bsolute Maximum Ratings at Ta = 25°C
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2SC4455
LB 1001 SANYO
2SC4455
T500
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2061 D
Abstract: 2PD602S ic 2061 d 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q
Text: bb53<ì31 OGSbOSÖ lai M A R X Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A N AI1ER P H I L I P S / D I S C R E T E b?E FEATURES • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION
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2PD602;
2PD602A
2PB710
2PB710A
-SC59
2PD602Q:
2PD602R:
2PD602S:
2PD602AQ:
2PD602AR:
2061 D
2PD602S
ic 2061 d
2PD602
2PD602A
2PD602AQ
2PD602AR
2PD602Q
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2SA1582
Abstract: sanyo 2033
Text: ; Ordering number: EN 2505 2SA1582/2SC4113 PN P/ NPN Epitaxial Planar Silicon Transistors SAiYOl Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance (Ri = 2.2kfl,R2= °°)
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2SA1582/2SC4113
2SA1582
2034/2034A
SC-43
7tlt17D7b
sanyo 2033
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2SA1572
Abstract: No abstract text available
Text: Ordering number: EN 2 4 5 8 2SA1572/2SC4067 PNP/ NPN Epitaxial Planar Silicon Transistors I SAKYOi Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance: R1=0, R2=47kii
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2SA1572/2SC4067
47kii
SC-43
rO-92
3C-43
2SA1572
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icl 2025
Abstract: 2005A TRANSISTOR IFW 2SA1591 2SC4133 BT 3713
Text: SANYO SEMICONDUCTOR CORP 32E D 7 cn ? G 7 f c 1 0 0 0 1 1 7 5 - G E3 T— 37— 13 V" T— 35— 11 P N P /N P N Epitaxial Planar Silicon Transistors 2051 Switching Applications with Bias Resistances R1=4.7kflf R2=47kO 2530 Applications Switching circuit, inverter circuit, interface circuit, driver circuit
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G00T175
47kohms)
T-91-20
SC-43
icl 2025
2005A
TRANSISTOR IFW
2SA1591
2SC4133
BT 3713
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN2381 No.2381 2 S A 1 5 6 4 /2 S C 4 0 4 8 PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance Applications . Switching circuit, inverter circuit, interface circuit, driver circuit Features . On-chip bias resistance:
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EN2381
10kii
2SA1564
SC-51
rO-92
3C-43
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sef530
Abstract: SEF532 SEF531 60v 9A c243s
Text: S G'S-THOMSON. 0 7 E 73C D 17*12*1237 17518 D •\ ' T N-CHANNEL POWER MDS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N'Channel enhancement mode Power-Mos field effect transistors. A B SO LU TE MAXIMUM RATINGS
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SEF530
SEF531
SEFS32
sif533
00V/60V
00V/60V
SEF532/SEF533
300ms,
SGSP361
C-243
SEF532
60v 9A
c243s
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2SA170B
Abstract: 2SC485 2sa105 transistor 2sa1705 2SC4485 2SA1705
Text: Ordering number: EN 3025 2SA1705/2SC4485 No.3025 SAMYO i PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency Power Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers. Features . Adoption of FBET process. • Fast switching speed.
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2SA1705/2SC4485
2SA1705
2034/2034A
SC-43
7tlt17D7b
2SA170B
2SC485
2sa105
transistor 2sa1705
2SC4485
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