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    203 OPTO Search Results

    203 OPTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
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    203 OPTO Price and Stock

    OSRAM Opto Semiconductors SFH 203 PFA

    Photodiode PIN Chip 900nm 0.59A/W Sensitivity 2-Pin T-1 3/4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SFH 203 PFA 9,848
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.597
    • 10000 $0.4728
    		Buy Now

    203 OPTO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH 203 P) und 750nm bis 1100nm (SFH 203 PFA)


    Original     		PDF 400nm 1100nm 750nm

    GEO06645

    Abstract: Q62702-P955 Q62702-P956 SFH203
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei 880 nm (SFH 203 FA)


    Original     		PDF OHR00883 OHF01026 GEO06645 GEO06645 Q62702-P955 Q62702-P956 SFH203

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203 P, SFH 203 PFA SFH 203 P Features: SFH 203 PFA Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203 P) and 750 nm to 1100 nm (SFH 203 PFA) • Short switching time (typ. 5 ns)


    Original     		PDF D-93055

    SFH203

    Abstract: SFH203P
    Text: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 203 P, SFH 203 PFA SFH 203 P Features: SFH 203 PFA Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203 P) and 750 nm to 1100 nm (SFH 203 PFA) • Short switching time (typ. 5 ns)


    Original     		PDF D-93055 SFH203 SFH203P

    850 nm LED

    Abstract: sfh203fa GEOY6645 Q62702-P955 Q62702-P956
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei


    Original     		PDF

    foto transistor

    Abstract: 850 nm LED FA 600 GEOY6645 Q62702-P955 Q62702-P956 photointerrupters
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 und bei


    Original     		PDF

    850 nm LED

    Abstract: GEOY6648 Q62702-P946 Q62702-P947 A T R Industrie-Elektronik GmbH
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei


    Original     		PDF

    GEOY6648

    Abstract: Q62702-P947
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei


    Original     		PDF

    GEO06648

    Abstract: Q62702-P946 Q62702-P947 SFH203P 203 OPTO
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm SFH 203 P und bei


    Original     		PDF GEO06648 GEO06648 Q62702-P946 Q62702-P947 SFH203P 203 OPTO

    SFH203

    Abstract: SFH 203
    Text: 2011-10-20 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 SFH 203, SFH 203 FA SFH 203 SFH 203 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203) and 750 nm to 1100 nm (SFH 203FA) • Short switching time (typ. 5 ns)


    Original     		PDF 203FA) SFH203) SFH203FA) D-93055 SFH203 SFH 203

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 203, SFH 203 FA SFH 203 SFH 203 FA Features: Besondere Merkmale: • Wavelength range S10% 400 nm to 1100 nm (SFH 203) and 750 nm to 1100 nm (SFH 203FA) • Short switching time (typ. 5 ns)


    Original     		PDF 203FA) SFH203) SFH203FA) D-93055

    Q62702P0956

    Abstract: 850 nm LED GEOY6645 OHLY0598
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


    Original     		PDF

    Q62702P0955

    Abstract: 850 nm LED GEOY6645 OHLY0598 Q62702P0956
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


    Original     		PDF

    Q62702P0956

    Abstract: sfh203fa SFH203 RoHS SFH203
    Text: Silizium-PIN-Fotodiode Silicon PIN Photodiode Lead Pb Free Product - RoHS Compliant SFH 203 SFH 203 FA SFH 203 SFH 203 FA Wesentliche Merkmale Features • Wellenlängenbereich (S10%) 400nm bis 1100nm (SFH203) und 750nm bis 1100nm (SFH203FA) • Kurze Schaltzeit (typ. 5 ns)


    Original     		PDF 400nm 1100nm SFH203) 750nm SFH203FA) 203FA) Q62702P0955 Q62702P0956 sfh203fa SFH203 RoHS SFH203

    850 nm LED

    Abstract: GEOY6648 OHLY0598
    Text: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silicon PIN Photodiode with Very Short Switching Time Lead Pb Free Product - RoHS Compliant SFH 203 P SFH 203 PFA SFH 203 P SFH 203 PFA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich


    Original     		PDF

    anti-reflection coating

    Abstract: C45N OC-768
    Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD48 PIN Diode The Series IPD48 PINs are applicable for building the next generation of high bit rate optoelectronic receivers for SONET/SDH


    Original     		PDF D-47057 ipag35 IPD48 IPD48 OC-768) PO-IPD48-0002 anti-reflection coating C45N OC-768

    10 GHz pin diode

    Abstract: diode all 4606 C10B C10N
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C10Z: 10 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building high bit rate, 10 Gbit/s opto-electronic receivers for


    Original     		PDF D-47057 ipag35 IPD12 Responsiv75 DS-IPD12 C10Z-0004 10 GHz pin diode diode all 4606 C10B C10N

    20 GHz PIN diode

    Abstract: diode all C20B C20N
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C20Z: 20 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building up high bit rate (10 Gbit/s NRZ and RZ) optoelectronic receivers for SONET/SDH and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD12 Dependen75 DS-IPD12 C20Z-0004 20 GHz PIN diode diode all C20B C20N

    diode all

    Abstract: 4606 C15B C15N
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD12_C15Z: 15 GHz PIN Diode Chip Applications The series IPD12 PINs are applicable for building up high bit rate (10 Gbit/s NRZ and RZ) optoelectronic receivers for SONET/SDH and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD12 Dependen75 DS-IPD12 C15Z-0004 diode all 4606 C15B C15N

    diode all

    Abstract: 4606 C40B C40N OC-768
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C40Z: 40 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD48 OC-768) Power75 DS-IPD48 C40Z-0002 diode all 4606 C40B C40N OC-768

    diode all

    Abstract: 4606 C45B C45N OC-768 IPD48-C45N
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C45Z: 45 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD48 OC-768) Pow75 DS-IPD48 C45Z-0002 diode all 4606 C45B C45N OC-768 IPD48-C45N

    60 GHz PIN diode

    Abstract: 4606 diode all C60B C60N C60Z OC-768 IPD48
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C60Z: 60 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD48 OC-768) Power75 DS-IPD48 C60Z-0002 60 GHz PIN diode 4606 diode all C60B C60N C60Z OC-768

    diode all

    Abstract: C80N OC-768
    Text: IPAG - Innovative Processing AG Data Sheet Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com IPD48_C80Z: 80 GHz PIN Diode Chip Applications The series IPD48 PINs are applicable for building up the next generation of high bit rate optoelectronic receivers for SONET/SDH (OC-768) including FEC and Ethernet applications.


    Original     		PDF D-47057 ipag35 IPD48 OC-768) 80GHz. DS-IPD48 C80Z-0002 diode all C80N OC-768

    C15N

    Abstract: No abstract text available
    Text: IPAG - Innovative Processing AG Product Overview Lotharstr. 55, D-47057 Duisburg, Germany - phone: +49 203 3792986, fax: +49 (203) 3794094 - www.ipag35.com Series IPD12 PIN Diode The Series IPD12 The series IPD12 PINs are applicable for building high bit rate (10 Gbit/s NRZ and


    Original     		PDF D-47057 ipag35 IPD12 IPD12 PO-IPD12-0004 C15N