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    201CNQ045 DIODE Search Results

    201CNQ045 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SANGDEST MICROELECTRONICS Technical Data Data Sheet N1188, Rev. A 201CNQ SERIES Green Products 201CNQ035/201CNQ040/201CNQ045/201CNQ050 SCHOTTKY RECTIFIER Applications: ● High current switching power supply ● Plating power supply ● Free-Wheeling diodes


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    N1188, 201CNQ 201CNQ035/201CNQ040/201CNQ045/201CNQ050 PDF

    diode 954

    Abstract: 201CN tt 5200
    Contextual Info: tSENSITRON 201CNQ035 201CNQ040 201CNQ045 SEMICONDUCTOR TECHNICAL DATA DATA SHEET, 954, REV. - PLASTIC POWER SCHOTTKY RECTIFIER 35/40/45 V, 200 A Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode


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    201CNQ035 201CNQ040 201CNQ045 diode 954 201CN tt 5200 PDF

    20257

    Abstract: 203CNQ100
    Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r PM Nuntfaor II Schottky Diodes 7 >F(AV)0Tc VfM*IFM A * (Veto) » te mJ (3) (7)tan fatodVmm Ur mA (Amp») Fw-on- •GW Mu l Tj •c Notes Dnnand Numbtr Cue Style, (Cm OuAm) (1) M od ul« « Center Tap 200CNQ035


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    200CNQ035 200CNQ040 200CNQ045 201CNQ035 201CNQ040 201CNQ045 201CNQ050 203CNQ080 203CNQ100 208CNQ060 20257 PDF

    MBR20030CTL

    Abstract: MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045
    Contextual Info: tSENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 890, REV. A Plastic Schottky Rectifier Product Catalog New Package! TO-247 Featuring: High Current/Leaded and Surface Mount Package Types SENSITRON SEMICONDUCTOR PLASTIC SCHOTTKY RECTIFIERS Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3


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    O-247 NQ045 403CNQ080 403CNQ100 60CNQ045SL 61CNQ045SL 62CNQ030SL 63CNQ100SL 69CNQ135SL 69CNQ150SL MBR20030CTL MBR20050CT MBR30050CT MBR30045CT MBR20015CTL 200CNQ030 244N MBR1605 SPD115417A fst30045 PDF

    200cnq050

    Contextual Info: IN TER NAT IO NA L R E C T I F I E R HE D | 4055455 GG1DDE3 3 | r*-o 3 *«2 / Schottky Rectifiers 25 T O 440 A M P S ' f AV @ T C Part Number V RW M vF M @ 'r m T j = 125°C & 'fm Rated VRW M Max. Tj (V) (A) (°C) (A) (mfl) <°C) 200CNQ030 200CNQ035 200CNQ040


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    200CNQ030 200CNQ035 200CNQ040 200CNQ045 200CNQ050 201CNQ 201CNQ035 201CNQ040 201CNQ045 201CNQ050 PDF

    D425

    Contextual Info: PD-2.258 International S Rectifier 201 c n q . s e rie s SCHOTTKY RECTIFIER 200 Amp Description/Features Major Ratings and Characteristics Characteristics ' f AV Rectangular waveform RRM lFSM @ tp-5pssine VF TJ @ 10OApk, Tj-125DC (per leg) 200 A 35 to 45


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    D-427 D-428 D425 PDF

    201CNQ045

    Abstract: 201CNQ 201CNQ035 201CNQ040 40HFL40S02 IRFP460
    Contextual Info: PD-2.258 rev. A 12/97 201CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.


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    201CNQ. 201CNQ IRFP460 40HFL40S02 201CNQ045 201CNQ035 201CNQ040 40HFL40S02 IRFP460 PDF

    201CNQ045

    Abstract: IRFP460 201CNQ 201CNQ035 201CNQ040
    Contextual Info: Buletin PD-2.258 rev. B 07/00 201CNQ. SERIES SCHOTTKY RECTIFIER 200 Amp TO-244AB Major Ratings and Characteristics Characteristics IF AV Rectangular Description/Features 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.


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    201CNQ. O-244AB 201CNQ IRFP460 FL40S02 201CNQ045 IRFP460 201CNQ035 201CNQ040 PDF

    201CNQ

    Abstract: 201CNQ035 201CNQ040 201CNQ045 IRFP460
    Contextual Info: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.


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    201CNQ. O-244AB 201CNQ IRFP460 FL40S02 201CNQ035 201CNQ040 201CNQ045 IRFP460 PDF

    Contextual Info: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.


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    201CNQ. O-244AB 100Apk, 201CNQ 12-Mar-07 PDF

    Contextual Info: Bulletin PD-2.258 rev. C 07/01 201CNQ. SERIES 200 Amp SCHOTTKY RECTIFIER TO-244AB Description/Features Major Ratings and Characteristics Characteristics IF AV Rectangular 201CNQ. Units The 201CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature.


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    201CNQ. O-244AB 201CNQ 08-Mar-07 PDF

    200CNQ030

    Abstract: 200CNQ 200CNQ020 200CNQ035 200CNQ040 201CNQ020 201CNQ030 201CNQ035 201CNQ045 diode
    Contextual Info: INTERNATIONAL RECTIFIER 4855452 SS DE I 4fl554SE □□□5133 55C 0 5 1 3 3 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.072A INTERNATIONAL RECTIFIER S Q O C N Q A N D 2 Q 1 C N Q S I«R E R I E S SOO Amp Schottky Center Tap Rectifier Module Description/Features


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    200CNQ 201CNQ S545a 4UNCT10N 1N1801 200CNQ030 200CNQ020 200CNQ035 200CNQ040 201CNQ020 201CNQ030 201CNQ035 201CNQ045 diode PDF

    200CNQ030

    Abstract: IOR 5300
    Contextual Info: INTERNATIONAL RECTIFIER SS DE I 4fl554SE 00D5133 55C 0 5 1 3 3 48 5 545 2 IN TE RNAT ION A L R EC TIFI E R Data Sheet No. PD-2.072A INTERNATIONAL RECTIFIER IOR SOOCNQ AND B O I CNQ SERIES 800 Amp Schottky Center Tap Rectifier Module Major Ratings and Characteristics


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    554SE 00D5133 200CNQ 201CNQ 200CNQ030 IOR 5300 PDF

    smd diode f54

    Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
    Contextual Info: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040


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    10MQ040 10MQ060 10MQ090 15MQ040 10BQ015 10BQ040 10BQ060 10BQ100 30BQ015 30BQ040 smd diode f54 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150 PDF

    12v to 220v step-up transformer winding awg

    Abstract: CD4013B IC PIN DETAILS HEXFETs FETs B66335
    Contextual Info: APPLICATION NOTE 965A A 500W100 kHz Resonant Converter Using HEXFETs* H E X F E T is a trademark ot International Rectifier by S. Young, Q. Cattino Summary This application note describes the implementation o f a 100 kHz reson­ ant converter using International Rec­


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    500W100 AN-965A 12v to 220v step-up transformer winding awg CD4013B IC PIN DETAILS HEXFETs FETs B66335 PDF

    209CmQ150

    Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
    Contextual Info: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78


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    10BQ100 10BQ015 10BQ040 10BQ060 30BQ100 30BQ015 30BQ040 30BQ060 209CmQ150 K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015 PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


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    MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


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    MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


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    MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


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    MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Contextual Info: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


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    MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


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    MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF