201403 Search Results

Contextual Info: Page 1 of 1 Product Change Notification - EOL of DS* Series, 3-Pin Delay Lines PCN Number: 201403 Last Time Buy Date: 31-Mar-2014 Subject: EOL of DS* Series 3-Pin, SIP Delay Lines Level 1 - Customer Notification Only Level 2 - Customer Approval Required TFT Contact:

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SU3018□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20140317-C PAGE 1 Ⅰ﹒Configuration and dimensions： Marking White ( PCB Pattern ) Unit：m/m A B C D E F G H I J 3.30±0.20 3.50±0.20

100 HFK

Contextual Info: DATA SHEET > HFK > 20140325 HFK CAPACITIVE COUPLING CLAMP AND CALIBRATION SET CA HFK FOR TESTS ACCORDING TO . > EN 61000-4-18 > EN 61000-4-4 > IEC 61000-4-18 > IEC 61000-4-4 CALIBRATION SET FOR CAPACITIVE COUPLING CLAMP VERIFICATION The HFK is used to couple EFT/burst pulses to I/O lines as required in different European and international standards for

Contextual Info: SPECIFICATION FOR APPROVAL REF. : PROD. NAME SH3028□□□□L□-□□□ ABC'S DWG NO. Shielded SMD Power Inductor REV. 20140317-B PAGE 1 Ⅰ﹒Configuration and dimensions： A Marking White C B 100 G D I E R I D H ( PCB Pattern ) Unit：m/m A B C

Contextual Info: SPECIFICATION FOR APPROVAL REF. : SF1506□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Power inductor NAME REV. 20140311-B PAGE 1 Ⅰ﹒Configuration and dimensions： A A B 4 R47 1 3 Marking B Inductance code C' H F G C 2 2 H G 3 E 1 （PCB Pattern

Contextual Info: TC7WH241FU/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7WH241FU, TC7WH241FK Dual Bus Buffer Non Inverted, 3-State Outputs Features TC7WH241FU • High speed: tpd = 3.6 ns typ. at VCC = 5 V • Low power dissipation: ICC = 2 A (max) at Ta = 25°C

Contextual Info: N3 PTVSxU1UPA series HU SO 300 W Transient Voltage Suppressor Rev. 1 — 6 March 2014 Product data sheet 1. Product profile 1.1 General description 300 W unidirectional Transient Voltage Suppressor TVS in a DFN2020-3 (SOT1061) leadless medium power Surface-Mounted Device (SMD) plastic package, designed for

Contextual Info: DF3A6.2FV TOSHIBA Diodes For Protecting Against ESD DF3A6.2FV Product for Use Only as Protection against Electrostatic Discharge ESD 0.22±0.05 Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range

Contextual Info: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)

Contextual Info: MIC Riser Cables, 2-24 Fibers Features and Benefits 900 µm TBII® Buffered Fibers Easy, consistent stripping All-dielectric cable construction Requires no grounding or bonding Flame-retardant jacket Rugged and durable Standards Approval and Listings National Electrical Code®

Contextual Info: TC74VCX541FT/FK/FTG TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCX541FT, TC74VCX541FK, TC74VCX541FTG Low-Voltage Octal Bus Buffer with 3.6 V Tolerant Inputs and Outputs The TC74VCX541 is a high performance CMOS octal bus buffer which is guaranteed to operate from 1.2-V to 3.6-V. Designed for

Contextual Info: UniCam Security Keyed LC Connector, Organizer Pack, 50 µm multimode OM3/ OM4/OM4 extended 10G distance slate 223.0125 Corning security keyed LC connector solution offers mechanical network security for organizations desiring to segregate networks due to privacy or security concerns. Utilizing the LC small-form-factor (SFF) format

Contextual Info: TC74VCX164245FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCX164245FT 16-Bit Dual Supply Bus Transceiver The TC74VCX164245FT is a dual supply, advanced high-speed CMOS 16-bit bus transceiver fabricated with silicon gate CMOS technology.

Contextual Info: 2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4944 Audio Frequency General Purpose Amplefier Applications • Small package (dual type) • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • High hFE: hFE = 120 to 400

Contextual Info: TC4511BP/BF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC4511BP, TC4511BF TC4511B BCD-to-Seven Segment Latch/Decoder/Driver TC4511B is decoder which converts the input of BCD code into the 7 segment display element driving signal and the output has

Contextual Info: SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU Unit: mm ○ Power Management Switch Applications ○ High-Speed Switching Applications Absolute Maximum Ratings Ta = 25 °C (Q1,Q2 Common) (Note) Characteristic Symbol Rating

Contextual Info: SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm 2.1±0.1 Characteristic 6 2 5 3 4 +0.1 0.3-0.05 1 0.166±0.05 Absolute Maximum Ratings Ta = 25 °C (Q1,Q2 Common)

TC75S59AFE

Contextual Info: TC75S59AFE/AFC TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S59AFE, TC75S59AFC Single Comparator（Open-Drain Output） The TC75S59AFE and TC75S59AFC are CMOS general-purpose single comparators. The devices can operate from a single supply

Contextual Info: TC74LCX16646AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX16646AFT Low-Voltage 16-Bit Bus Transceiver/Register with 5-V Tolerant Inputs and Outputs The TC74LCX16646AFT is a high-performance CMOS 16-bit bus transceiver/register. Designed for use in 3.3-V systems, it

Contextual Info: TC74LCX245F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX245F, TC74LCX245FT, TC74LCX245FK Low-Voltage Octal Bus Transceiver with 5-V Tolerant Inputs and Outputs The TC74LCX245 is a high-performance CMOS octal bus transceiver. Designed for use in 3.3-V systems, it achieves

Contextual Info: TC74VCXR162646FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCXR162646FT Low-Voltage 16-Bit Bus Transceiver/Register with 3.6-V Tolerant Inputs and Outputs The TC74VCXR162646FT is a high-performance CMOS 16-bit bus transceiver/register. Designed for use in 1.8-V, 2.5-V or 3.3-V

Contextual Info: HN4A51J TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process HN4A51J Audio Frequency General Purpose Amplifier Applications z z z z Unit: mm High voltage : VCEO = −120V High hFE : hFE = 200 to 700 Excellent hFE linearity : hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)

Contextual Info: 2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)

Contextual Info: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current