201209 Search Results
201209 Price and Stock
Cal-Chip Electronics FB201209T-100Y-SFBEAD 0805 10 OHM .07DC 500MA |
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FB201209T-100Y-S | Digi-Reel | 7,950 | 1 |
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Pulse Electronics Corporation ABPY00201209221Y00FERRITE BEAD 220 OHM 0805 1LN |
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ABPY00201209221Y00 | Digi-Reel | 7,650 | 1 |
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ABPY00201209221Y00 | Cut Tape | 4,000 | 10 |
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ABPY00201209221Y00 | 8,000 |
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Cal-Chip Electronics FB201209T-182Y-SFBEAD 0805 1.8K OHM .4DC 200MA |
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FB201209T-182Y-S | Digi-Reel | 4,000 | 1 |
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Cal-Chip Electronics FBH201209T-300Y-SFB HI 0805 30 OHM 3A .04DC |
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FBH201209T-300Y-S | Digi-Reel | 4,000 | 1 |
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Cal-Chip Electronics FBH201209T-751Y-SFERRITE BEAD 750 OHM 0805 1LN |
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FBH201209T-751Y-S | Reel | 4,000 | 4,000 |
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201209 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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PBJ201209T-121Y-N
Abstract: PBJ201209T-331Y-N PBJ201209T-400Y-N PBJ201209T-102Y-N PBJ201209T-301Y-N HP 2231 opto coupler PBJ201209T-300Y-N PBJ201209T-070Y-N
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200mV PBJ201209T-070Y-N PBJ201209T-110Y-N PBJ201209T-190Y-N PBJ201209T-300Y-N PBJ201209T-320Y-N PBJ201209T-400Y-N PBJ201209T-500Y-N PBJ201209T-600Y-N PBJ201209T-800Y-N PBJ201209T-121Y-N PBJ201209T-331Y-N PBJ201209T-400Y-N PBJ201209T-102Y-N PBJ201209T-301Y-N HP 2231 opto coupler PBJ201209T-300Y-N PBJ201209T-070Y-N | |
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Abstract: PAGE13 QKR031-C QKR032-D MLB-201209-0060P-N2
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MLB-201209-0060P-N2 TEL886-3-5972488 Fax886-3-5972477 PAGE12 PAGE13 QKR031-C QKR032-D MLB-201209-0060P-N2 | |
mlb-201209-0040p-n1
Abstract: PAGE12 PAGE13 QKR031-C QKR032-D
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MLB-201209-0040P-N1 TEL886-3-5972488 Fax886-3-5972477 mlb-201209-0040p-n1 PAGE12 PAGE13 QKR031-C QKR032-D | |
ACC635050
Abstract: ACC201209 ACC321611 ACC322513 ACC453215 ACC575018 ACC575032 HF50 HF70
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ACC201209 ACC321611 ACC322513 ACC453215 ACC575018 ACC575032 ACC635050 ACC635050 ACC201209 ACC321611 ACC322513 ACC453215 ACC575018 ACC575032 HF50 HF70 | |
SMI-201209
Abstract: SMI-201209PEF-R33
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floMI-201209PEF-220 SMI-201209 SMI-201209PEF-R33 | |
MLB-201209-0030P-N1
Abstract: PAGE12 PAGE13 QKR031-C QKR032-D MLB2012090030
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MLB-201209-0030P-N1 TEL886-3-5972488 Fax886-3-5972477 MLB-201209-0030P-N1 PAGE12 PAGE13 QKR031-C QKR032-D MLB2012090030 | |
Contextual Info: SPECIFICATION FOR APPROVAL REF. : UF09□□□□□□L□-□□□ ABC'S DWG NO. PROD. Line Filter NAME REV. 20120924-B PAGE 1 Ⅰ﹒Configuration and dimensions: B A ●UF09H2 Series Marking: C C Wψ Inductance. Code Manufacture. Wψ D F 3 2 3 E 2 E |
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20120924-B UF09H2 UF09V2 UF09V2 UF09H2 MIL-STD-202 JESD22-B111 JIS-C-6429 AR-001C | |
Contextual Info: SPECIFICATION FOR APPROVAL REF. : FR1013□□□□L□-□□□ ABC'S DWG NO. PROD. Shielded Inductor NAME REV. 20120918-C PAGE 1 Ⅰ﹒Configuration and dimensions: 102 A B Marking C Wψ F A B C F 10.00 ±0.5 13.00 ±0.5 5.00 ±2.0 5.00 ±0.5 Ⅱ﹒Description: |
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FR1013â 20120918-C AR-001C | |
Contextual Info: SPECIFICATION FOR APPROVAL PAGE:1 PROD. NAME Ⅰ﹒ PART NO: SRR1280-271V4K REF 20120926 Shielded SMD Power Inductor Configuration and dimensions: C 271 B A E D Unit:m/m Ⅱ﹒ A B 12.5 0.3 12.5 0.3 C 7.5 0.5 D E F 5.0 0.3 7.0 typ. 6.8 ref. G H 5.4 ref. |
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SRR1280-271V4K 30sec 60sec 150sec MIL-STD-202 JESD22-B111 JIS-C-6429 | |
ADC08D1000WG-QV
Abstract: ADC08D1520WGFQV
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AH6-D-12-0001 ADC08D1520WGFQV. ADC08D1000WG-QV ADC08D1000WGFQV ADC08D1520WGFQV/NSC ADC08D1000WG-QV ADC08D1520WGFQV | |
UPB201209T-500Y-N
Abstract: UPB201209T-101Y-N UPB201209T UPB201209T-300Y-N UPB201209T-330Y-N UPB201209T-600Y-N
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UPB201209T-110Y-N UPB201209T-150Y-N UPB201209T-190Y-N UPB201209T-260Y-N UPB201209T-300Y-N UPB201209T-330Y-N UPB201209T-400Y-N UPB201209T-500Y-N UPB201209T-600Y-N UPB201209T-800Y-N UPB201209T-500Y-N UPB201209T-101Y-N UPB201209T UPB201209T-300Y-N UPB201209T-330Y-N UPB201209T-600Y-N | |
Contextual Info: SMD Multilayer Ferrite Chip Beads Tape Dimensions and Packaging Quantities Dimensions in mm P A C K A G E S IZE o o Q Q 160808 1.08 1.88 8 201209 1.42 2 .2 4 321611 1.88 321616 o C H IP S / R E E L 4 1.05 4000 8 4 1.04 4000 3 .5 0 8 4 1.27 3000 1.88 3.61 8 |
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Contextual Info: SPECIFICATION FOR APPROVAL REF. : SN3010□□□□L□-□□□ ABC'S DWG NO. PROD. SMD Power Inductor NAME REV. 20120924-D PAGE 1 Ⅰ﹒Configuration and dimensions: C B A 1.2 1.0 D 2.7 1.0 E F E PCB Pattern Unit:m/m A B C D E F 3.00 ±0.1 3.00 ±0.1 |
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SN3010â 20120924-D 30sec 60sec 150sec MIL-STD-202 JESD22-B111 JIS-C-6429 AR-001C J-STD-002 | |
SBJ201209T-471Y-N
Abstract: 201209T-202Y-N 201209T-301Y-N 201209T-600Y-N
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200mV 201209T-070Y-N 201209T-110Y-N 201209T-170Y-N 201209T-190Y-N 201209T-260Y-N 201209T-320Y-N 201209T-400Y-N 201209T-500Y-N 201209T-600Y-N SBJ201209T-471Y-N 201209T-202Y-N 201209T-301Y-N 201209T-600Y-N | |
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LSML-201209Contextual Info: Surface Mount Multilayer Chip Inductor LSML-201209 Series C A L IB E R E L E C T R O N IC S IN C . specifications subject to change * revision 3-2003 Dimensions 0.5 ± 0.3 0.90 ± 0.20 2.0 ± 0.20 0.5 ± 0.3 (Not to scale) Dimensions in mm 1.25 ± 0.20 Part Numbering Guide |
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LSML-201209 | |
Contextual Info: SMD Multilayer Ferrite and Ceramic Chip Inductors * o p * Dimensions in m m P A C K A G E SIZE o o o o C H IP S /R E E L 160808 1.08 1.88 8 4 1.0 5 4000 201209 1.42 2 .2 4 8 4 1.0 4 4000 201212 1.5 0 2 .3 0 8 4 1.6 0 2000 321611 1.88 3 .5 0 8 4 1.27 3000 |
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Abstract: PAGE13 QKR032-D
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MLB-201209-0050S-N1-RU TEL886-3-5972488 Fax886-3-5972477 PAGE12 PAGE13 QKR032-D | |
TK39N60WContextual Info: TK39N60W MOSFETs Silicon N-Channel MOS DTMOS TK39N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.055 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK39N60W O-247 TK39N60W | |
TPCP8105Contextual Info: TPCP8105 MOSFETs Silicon P-Channel MOS U-MOS TPCP8105 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches • Notebook PCs 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) |
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TPCP8105 TPCP8105 | |
Contextual Info: TLP714 Photocouplers GaAℓAs Infrared LED & Photo IC TLP714 1. Applications • Intelligent Power Module Signal Isolation • Factory Automation FA • Transistor Inverters 2. General The TLP714 is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode |
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TLP714 TLP714 | |
Contextual Info: TK16N60W MOSFETs Silicon N-Channel MOS DTMOS TK16N60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching |
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TK16N60W O-247 | |
TJ9A10M3Contextual Info: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V) |
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TJ9A10M3 O-220SIS TJ9A10M3 | |
ITS4200S-SJ-D
Abstract: MJ 5023 JEDEC51-7 I200SD AURIX EPCOS 5025 -3
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ITS4200S-SJ-D ITS4200S-SJ-D MJ 5023 JEDEC51-7 I200SD AURIX EPCOS 5025 -3 | |
Contextual Info: TC74VCX164245FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VCX164245FT 16-Bit Dual Supply Bus Transceiver The TC74VCX164245FT is a dual supply, advanced high-speed CMOS 16-bit bus transceiver fabricated with silicon gate CMOS technology. |
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TC74VCX164245FT 16-Bit TC74VCX164245FT |