201203 Search Results

Q9-001

Abstract: ISO 9001
Contextual Info: Integrated Silicon Solution, Inc. ISSI 1940 Zanker Road, San Jose, CA 95112, USA Corporate Registration Includes: Integrated Silicon Solution, Inc. (Shanghai) No. 12-13, Lane 647, Songtao Road, Zhangjiang Hi-Tech Park Pudong New Area, Shanghai, 201203, China

"vlsi technology" abstract

Abstract: "vlsi technology" abstract for split-gate flash
Contextual Info: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China

Contextual Info: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20120323-C PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F D H D m/m m/m

MIPSTZ2012D2R2

Abstract: MIPSTZ2012D
Contextual Info: CD-TCE074-201203 Multi-layer Power Inductor : MIPSTZ2012D series Low Profile Type Features • 2.0x1.25 mm and 0.8 mm in height (small and low profie): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class

Contextual Info: DG-201203-1 062 Densitron Technologies plc A8064 ISO 9001

MIPSZ2520D2R2

Abstract: MIPSZ2520D2R2H
Contextual Info: CD-TCE071-201203 Multi-layer Power Inductor : MIPSZ2520D series High current Type Features • 2.5x2.0 mm and 1.0 mm in height (compact size): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class

MIPF2016D4R7

Abstract: MIPF2016D2R2 MIPF2016D1R5 MIPF2016D3R3 mipf2016d4 MIPF2016
Contextual Info: CD-TCE066-201203 Multi-layer Power Inductor : MIPF2016series Very Small Type Features • 2.0x1.6 mm and 1 mm in height (very compact size): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class • High speed mounting: Using SMT mounter makes less than a

CD-TCE072-201203

Contextual Info: CD-TCE072-201203 Multi-layer Power Inductor : MIPSUZ2012Dseries Very Small and Very Low Profile Type Features • 2.0x1.25 mm and 0.5 mm in height (very compact size : CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class

MIPSAZ3225D

Abstract: MIPSAZ3225D1R5 MIPSAZ3225D2R2 MIPSAZ3225D0R5 MIPSAZ3225D0R2
Contextual Info: CD-TCE075-201203 Multi-layer Power Inductor : MIPSAZ3225D series High current Type Features • 3.2x2.5 mm and 1.2 mm in height (compact size): CAE and fine printing technology made this compact size possible • Extremely low DC resistance in the class

Contextual Info: CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

Contextual Info: CUS521 Schottky Barrier Diode Silicon Epitaxial CUS521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.5 V (max) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit

TLP290-4

Abstract: 11-11F1
Contextual Info: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.

hsop28 layout

Abstract: TB62214AFG IMX 140 TB62214 Toshiba HSOP28
Contextual Info: TB62214AFG/AFTG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62214AFG, TB62214AFTG BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC The TB62214AFG/AFTG is a two-phase bipolar stepping motor driver using a PWM chopper controlled by clock input.

Contextual Info: TLP3375 Photocouplers Photorelay TLP3375 1. Applications • High-Speed Memory Testers • High-Speed Logic IC Testers • Radio-Frequency Measuring Instruments • ATE Automatic Test Equipment 2. General The TLP3375 photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is

Contextual Info: TK4P60DA MOSFETs Silicon N-Channel MOS π-MOS TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3)

LM 858 IC chip

Abstract: Q65111A3098
Contextual Info: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN  Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß

VLF3014AT1R0N1R7

Abstract: VLF3014 ET-7200 VLF3014AT-1R0N1R7 30x2 VLF5010 0033g VLF3025 VLF302510 VLF5014AT100MR9
Contextual Info: Inductors for Power Circuits Wound/STD • magnetic shielded VLF series Type: VLF3014A 2.6x2.8 mm VLF302510MT (3.0x2.5 mm) VLF302512MT (3.0x2.5 mm) VLF4012A (3.5x3.7 mm) VLF4014A (3.5x3.7 mm) VLF5010A-2 (4.5x4.7 mm) VLF5012A (4.5x4.7 mm) VLF5014A (4.5x4.7 mm)

AN10876

Abstract: varistor 275 AN-1104 SSL2109AT AN1104 SSL2109 SSL2109A BYV25
Contextual Info: SSL2109 series GreenChip controller for LED lighting Rev. 3 — 4 June 2012 Product data sheet 1. General description The SSL2109 series is a range of high-voltage Integrated Circuits IC for driving LED lamps in general lighting applications. The main benefits of this IC include:

Japanese Transistor Data Book

Contextual Info: Doc No. TT4-EA-14130 Revision . 2 Product Standards Bipolar Transistor DSAF00100L DSAF00100L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF001 DSA3001 in ML3 type package 0.6 3 • Features 1.0  High forward current transfer ratio hFE with excellent linearity

Contextual Info: Doc No. TT4-EA-14124 Revision. 2 Product Standards Schottky Barrier Diode DB2W40200L DB2W40200L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5  Low forward voltage VF  Forward current Average IF(AV) = 2 A rectification is possible

Contextual Info: Doc No. TT4-EA-14152 Revision. 4 Product Standards Zener Diode DE2704700L DE2704700L Silicon epitaxial planar type Unit: mm 0.6 For ESD protection 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

Contextual Info: Doc No. TT4-EA-14156 Revision. 5 Product Standards Zener Diode DE2703600L DE2703600L Silicon epitaxial planar type Unit: mm For ESD protection DE2S036 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

Contextual Info: Hyper Mini TOPLED Hyper-Bright LED Lead Pb Free Product - RoHS Compliant LB M673, LT M673 Released Besondere Merkmale • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: kleine Bauform für Anwendungen mit wenig Platzbedarf

GPLY6880

Abstract: sideled OHF04132
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung