Untitled
Abstract: No abstract text available
Text: DSEE15-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 15 A 25 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
|
Original
|
DSEE15-12CC
60747and
20110215a
|
PDF
|
DSEE29-12CC
Abstract: No abstract text available
Text: DSEE29-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 30 A 35 ns 3 DSEE29-12CC Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
|
Original
|
DSEE29-12CC
29-12CC
60747and
20110215a
DSEE29-12CC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSEE29-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 30 A 35 ns 3 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
|
Original
|
DSEE29-12CC
29-12CC
60747and
20110215a
|
PDF
|
TO-273
Abstract: DSEE15-12CC
Text: DSEE15-12CC V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 600 V 15 A 25 ns 3 DSEE15-12CC Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
|
Original
|
DSEE15-12CC
60747and
20110215a
TO-273
DSEE15-12CC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSEE55-24N1F V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 3 1200 V 60 A 40 ns 5 DSEE55-24N1F Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips
|
Original
|
DSEE55-24N1F
60747and
20110215a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DSEE55-24N1F V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 3 1200 V 60 A 40 ns 5 Backside: isolated Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
|
Original
|
DSEE55-24N1F
60747and
20110215a
|
PDF
|