20100401A Search Results

E72873

Abstract: MWI450-12E9
Contextual Info: MWI 450-12 E9 IGBT Modules Sixpack IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 3 E72873 See outline drawing for pin arrangement 5 Features IGBTs Symbol Conditions VCES TVJ = 25°C to 125°C

E72873

Abstract: MWI450-12E9
Contextual Info: MWI 450-12 E9 IGBT Modules Sixpack IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES

Contextual Info: MWI 450-12 E9 IC80 = 440 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Sixpack 2 28 4 15 20 25 16 17 21 22 26 27 11/12 29 6 13 14 9/10 18 19 7/8 23 24 1 E72873 3 See outline drawing for pin arrangement 5 Features IGBTs Conditions Maximum Ratings VCES

Contextual Info: MWI 450-12 E9 IC8 0 = 440 A VCE S = 1200 V VCE sat ty=p . 2.2 V IGBT Modules Six p ack 2 28 4 15 20 25 16 17 21 22 26 27 11/ 12 29 6 13 14 9 / 10 18 19 7 /8 23 24 1 3 E 7 28 7 3 See ou tline draw ing f or p in arrangement 5 Features IGBTs VC C ondi ti ons

ZY180L

Abstract: UL758
Contextual Info: VMO 1200-01F Advanced Technical Information HipPerFET Module VDSS = 100 V ID25 = 1220 A RDS on = 1.25 mΩ N-Channel Enhancement Mode D S D G KS KS G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 75 V ± 20 V ID25 ID80