200V MOS FET Search Results

2SK2521-01

Contextual Info: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2518-01MR

Abstract: MOSFET 200v 20A n.channel
Contextual Info: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2518-01MR

Abstract: MOSFET 200v 20A n.channel
Contextual Info: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2520-01MR

Abstract: 2SK2520
Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2522-01MR

Contextual Info: 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2519-01

Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2SK2521-01

Contextual Info: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

SDF120NA20

Abstract: D403
Contextual Info: Æiltton _ PRODUCT CÂTÂL @ HFVICFS- INC. N-CHANNEL ENHANCEMENT MOS FET 200V, 120A, 0.03Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE RGS=1.0Mn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25'C)

Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

N-Channel MOSFET 200v

Abstract: MOSFET 200v 20A n.channel
Contextual Info: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

3sk287

Abstract: 3sk272 2SK690 "Intelligent Power Device"
Contextual Info: Field Effect Transistors • IPD Intelligent Power Device (continued) Application Output Breakdown Voltage Type No. EL Driver MIP803 Application Type No. Output MOS FET Vcc VDSS Id 1.5 -3 .5 V 200V 15/70mA Input Voltage VlN Output Breakdown Voltage Package

Contextual Info: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk2520

Abstract: 2SK2520-01MR
Contextual Info: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

2sk3155

Abstract: 2sk3148 Fuel injection
Contextual Info: Hitachi Power MOS FET D5 Series : Low on-resistance at 1 00V to 200V V dss * i •Applications ¡Feature and Merit Electrical equipment Feature In-pipe fuel injection High 1 Monitor S-correction Merit High breakdown voltage promotes equipm ent safety planning

Contextual Info: FU JI 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,1 m 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3£2 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -

2SK2519-01

Contextual Info: FUJI 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0 ,4 Q 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators

Contextual Info: FU JI tìusELTUtìue 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof 0 ,4 Q 10A 40W > Outline Drawing > Applications

Contextual Info: Preliminary Datasheet RJK2075DPA 200V - 20A - MOS FET High Speed Power Switching R07DS0856EJ0100 Rev.1.00 Jul 24, 2012 Features • Low on-resistance RDS on = 0.054  typ. (at ID = 10 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching

SDF240

Contextual Info: Ætttron PRODUCT DEVICES.INC. CATALO' N-CHANNEL ENHANCEMENT MOS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Dra in-Ga te Vo 11age (R g s = 1.OMn) (1) Gote-Source Voltage Con t inuous Drain Current Continuous (Tc = 2 5 “C)

Contextual Info: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3 Q 20A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof TO-220F15 4.5 2.7 > Applications