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    200V MOS FET Search Results

    200V MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    200V MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2521-01

    Abstract: No abstract text available
    Text: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2521-01 2SK2521-01

    2SK2518-01MR

    Abstract: MOSFET 200v 20A n.channel
    Text: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2518-01MR 2SK2518-01MR MOSFET 200v 20A n.channel

    2SK2518-01MR

    Abstract: MOSFET 200v 20A n.channel
    Text: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2518-01MR 2SK2518-01MR MOSFET 200v 20A n.channel

    2SK2520-01MR

    Abstract: 2SK2520
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2520-01MR 2SK2520-01MR 2SK2520

    2SK2522-01MR

    Abstract: No abstract text available
    Text: 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2522-01MR 2SK2522-01MR

    2SK2519-01

    Abstract: No abstract text available
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2519-01 2SK2519-01

    2SK2521-01

    Abstract: No abstract text available
    Text: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2521-01 2SK2521-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2520-01MR

    Untitled

    Abstract: No abstract text available
    Text: 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2521-01

    N-Channel MOSFET 200v

    Abstract: MOSFET 200v 20A n.channel
    Text: 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0,13Ω 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2518-01MR N-Channel MOSFET 200v MOSFET 200v 20A n.channel

    Untitled

    Abstract: No abstract text available
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2519-01

    Untitled

    Abstract: No abstract text available
    Text: 2SK2522-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,18Ω 18A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2522-01MR

    2SK2519-01

    Abstract: 200v 10A mosfet
    Text: 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2519-01 2SK2519-01 200v 10A mosfet

    2sk2520

    Abstract: 2SK2520-01MR
    Text: 2SK2520-01MR N-channel MOS-FET FAP-II Series 200V > Features - 0,4Ω 10A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2520-01MR 2sk2520 2SK2520-01MR

    SDF120NA20

    Abstract: D403
    Text: Æiltton _ PRODUCT CÂTÂL @ HFVICFS- INC. N-CHANNEL ENHANCEMENT MOS FET 200V, 120A, 0.03Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS DRAIN-SOURCE VOLTAGE DRAIN-GATE VOLTAGE RGS=1.0Mn GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT CONTINUOUS (Tc = 25'C)


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    PDF SDF120NA20 MIL-STD-883 300iis, D403

    3sk287

    Abstract: 3sk272 2SK690 "Intelligent Power Device"
    Text: Field Effect Transistors • IPD Intelligent Power Device (continued) Application Output Breakdown Voltage Type No. EL Driver MIP803 Application Type No. Output MOS FET Vcc VDSS Id 1.5 -3 .5 V 200V 15/70mA Input Voltage VlN Output Breakdown Voltage Package


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    PDF MIP803 15/70mA 140kHz MIP501 MIP502 AC/12V O-92NL 3SK241 3SK272 3SK273 3sk287 2SK690 "Intelligent Power Device"

    2sk3155

    Abstract: 2sk3148 Fuel injection
    Text: Hitachi Power MOS FET D5 Series : Low on-resistance at 1 00V to 200V V dss * i •Applications ¡Feature and Merit Electrical equipment Feature In-pipe fuel injection High 1 Monitor S-correction Merit High breakdown voltage promotes equipm ent safety planning


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    PDF O-220 O-220FM 2SK3147 2SK3150 2SK3149 2SK3148 2SK3151 2SK3152 2SK3153 2sk3155 Fuel injection

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2521-01 N-channel MOS-FET FAP-II Series 200V > Features - 0,1 m 18A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2521-01 7027D8

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3£2 20A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications -


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    PDF 2SK2518-01MR

    2SK2519-01

    Abstract: No abstract text available
    Text: FUJI 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - 0 ,4 Q 10A 40W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2519-01 04b3ci

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2522-01MR N-channel MOS-FET 200V o,i8a 18A 40 W FAP-II Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators


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    PDF 2SK2522-01MR 20Ki2)

    Untitled

    Abstract: No abstract text available
    Text: FU JI tìusELTUtìue 2SK2519-01 N-channel MOS-FET FAP-II Series 200V > Features - High Speed Switching - Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof 0 ,4 Q 10A 40W > Outline Drawing > Applications


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    PDF 2SK2519-01

    SDF240

    Abstract: No abstract text available
    Text: Ætttron PRODUCT DEVICES.INC. CATALO' N-CHANNEL ENHANCEMENT MOS FET 200V, ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS Drain-source Volt. l Dra in-Ga te Vo 11age (R g s = 1.OMn) (1) Gote-Source Voltage Con t inuous Drain Current Continuous (Tc = 2 5 “C)


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    PDF SDF240 SDF240 MIL-S-19500 300mS,

    Untitled

    Abstract: No abstract text available
    Text: FU JI 2SK2518-01MR N-channel MOS-FET FAP-IIA Series 200V > Features - 0 ,1 3 Q 20A > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof TO-220F15 4.5 2.7 > Applications


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    PDF 2SK2518-01MR O-220F15 20Kil) 0DD4b37