200V FAST DIODE Search Results

trr-50ns 200V 0.25A

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES2D product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 200V Ifsm 50A IF(AV) 2.0A @Vf 0.975V @If 2.0A Trr 50nS IR 5.0µA @VR 200V Package Qty Tape : 3K/Reel, 48K/Ctn;

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number ES1D product family ULTRA FAST RECOVERY RECTIFIERS package type HSMA VRM PRV 200V Ifsm 30A IF(AV) 1.0A @Vf 0.975V @If 1.0A Trr 50nS IR 5.0µA @VR 200V Package Qty Tape : 3K/Reel, 48K/Ctn;

trr-50ns 200V 0.25A

Contextual Info: Product Catalog > Diodes > Ultra Fast Recovery Rectifiers > Part Number US1D product family ULTRA FAST RECOVERY RECTIFIERS package type DO-214AC VRM PRV 200V Ifsm 30A IF(AV) 1.0A @Vf 1.0V @If 1.0A Trr 50nS IR 10µA @VR 200V Package Qty Tape : 5K/Reel, 80K/Ctn;

JESD97

Abstract: STRH60N20FSY3 25C312
Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH60N20FSY1 STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH60N20FSY1 200V STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

FUS103D

Abstract: power Diode 200V 10A
Contextual Info: FUS103D VOLTAGE 200V Elektronische Bauelemente 10.0 AMP Surface Mount Super Fast Rectifiers A suffix of "-C" indicates halogen-free & RoHS Compliant 10 + 0.5 4.5 + 0.3 FEATURES 2 D -Pack 1.28 5.0 + 0.3 10 + 0.5 2.0Max 1.6 * Planar Construction * High Reverse Voltage : VRRM=200V

100F2

Contextual Info: FAST RECOVERY DIODE MODULE PC 100F2 100A/200V/trr:90nsec FEATURES o Isolated Base oDual Diodes - Cathode Common :PC100F2 o Super Fast Recovery o High Surge Capability MAXIMUM RATINGS Voltage Rating Repetitive Peak Reverse Voltage per Arm Electrical Rating

Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

Contextual Info: STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

0C28

Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Contextual Info: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common

STRH60N20FSY3

Abstract: 25C312
Contextual Info: STRH60N20FSY3 N-channel 200V - 0.044Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH60N20FSY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: KSM2614 200V N-Channel PowerTrench MOSFET TO-220 Description • • • • • • 62A, 200V, RDS on = 22.9mΩ @VGS = 10 V Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) High power and current handling capability

D4SBL20U

Abstract: D4SBL20
Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Super Fast Bridges OUTLINE DIMENSIONS D4SBL20U Case : 3S 200V 4A FEATURES Low noise SIL Package High IFSM APPLICATION Switching power supply Home Electrical Appliances Office Equipment, Telecommunication, Factory Automation

STRH13N20SY3

Abstract: ST MAKE SMD DIODE
Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

st smd diode marking code

Abstract: STRH13N20SY1 STRH13N20SY3 STRH30N20SY3
Contextual Info: STRH13N20SY3 N-channel 200V - 0.18Ω - SMD-0.5 Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH13N20SY3 200V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight

Contextual Info: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100'-~200V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability

D4SBL20U

Contextual Info: SHINDENGEN Super Fast Recovery Rectifiers Super Fast Bridges OUTLINE DIMENSIONS D4SBL20U Unit : mm 200V 4A FEATURES Low noise SIL Package High IFSM APPLICATION Switching power supply Home (Electrical) Appliances Office Equipment, Telecommunication, Factory Automation

2VF10CT

Abstract: 2VF10CTF 2VF20CT 2VF20CTF
Contextual Info: FAST RECOVERY DIODE 2VF10CT 2VF20CT 2VF10CTF 2VF20CTF 2.2A/100~200V/trr : 30nsec FEATURES • TO-251AA Case •> TO-252AA Case, Surface Mount Device ° Ultra — Fast Recovery ° Dual Diodes - Cathode Common • Low Forward .Voltage Drop ° High Surge Capability

NTE588

Contextual Info: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier

Contextual Info: KSMD12N20LTM_F085 200V Logic Level N-Channel MOSFET Features TO-252 • • • • • • • 9.0A, 200V, RDS on = 0.28Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 17 pF) Fast switching 100% avalanche tested Improved dv/dt capability

Contextual Info: RCX160N20 Nch 200V 16A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 180mW ID 16A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

Contextual Info: RCX081N20 Datasheet Nch 200V 8.0A Power MOSFET lOutline VDSS 200V RDS on (Max.) 770mW ID 8.0A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.

Net ARM 50

Abstract: PC50F PC50F2
Contextual Info: FAST RECOVERY DIODE MODULE PC50F2 50A/200V/trr:80nsec FEATURES o Isolated Base oDual Diodes - Cathode Common o Ultra-Fast Recovery o High Surge Capability Approx. Net W eight: 105 Grams M AXIM UM RATINGS Voltage Rating Repetitive Peak Reverse Voltage per Arm