200V 70A Search Results

FDA70N20

Contextual Info: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)

N-Channel MOSFET 200v

Abstract: FDA70N20
Contextual Info: TM FDA70N20 200V N-Channel MOSFET Features Description • 70A, 200V, RDS on = 0.035Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 66 nC)

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

powertech

Abstract: 200v 5a transistor
Contextual Info: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current

Contextual Info: RCX700N20 Nch 200V 70A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 42.7mW ID 70A PD 40W lFeatures TO-220FM (1) (2) (3) lInner circuit 1) Low on-resistance. 3) Drive circuits can be simple. (1) Gate (2) Drain (3) Source 4) Parallel use is easy.

Contextual Info: RCJ700N20 Nch 200V 70A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 42.7mW ID 70A PD 40W LPT(S) (SC-83) (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Drive circuits can be simple.

SCDA6

Abstract: semtech rectifier bridge SCH25000 rectifier 400V 5A Full-Wave Bridge Rectifier SCBAR4F sdhd5k SC3BK4F SCDA4F 1N5415
Contextual Info: 2008 Axial Rectifiers PART NUMBERS DESCRIPTION 1N5415 through 1N5420 Fast recovery axial rectifier, 50V - 600V, Io=4.5A 1N5550 through 1N5554 1N5614, 1N5616, 1N5618, 1N5620, 1N5622 Standard recovery axial rectifier, 200V - 1000V, Io=5.0A Standard recovery axial rectifier, 200V - 1000V, Io=2.0A

Contextual Info: DIGITRON SEMICONDUCTORS UFR7010-UFR7020 UFR7120-UFR7150 UFR7250-UFR7280 ULTRA FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Rating UFR Symbol 7010 7015 7020 7120 7130 7140 7150 7250 7260 7270 7280 Working peak reverse voltage VRWM 100V 150V 200V 200V 300V 400V

IRFE210

Abstract: JANTX2N6784U JANTXV2N6784U LCC-18 4.5v to 100v input regulator
Contextual Info: PD - 91722B IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U  HEXFET TRANSISTORS JANTXV2N6784U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/556] 200V, N-CHANNEL Product Summary Part Number IRFE210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A The leadless chip carrier (LCC) package represents the

IRF 725

Abstract: IRFF210 JANTX2N6784 JANTXV2N6784
Contextual Info: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International

Contextual Info: PD - 90424C IRFF210 JANTX2N6784 JANTXV2N6784 REF:MIL-PRF-19500/556 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A  The HEXFET technology is the key to International

Contextual Info: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 93989 IRFE9210 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9210 BVDSS -200V RDS(on) 3.0Ω ID -1.3A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface

Contextual Info: PD - 91722B IRFE210 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6784U  HEXFET TRANSISTORS JANTXV2N6784U SURFACE MOUNT LCC-18 [REF:MIL-PRF-19500/556] 200V, N-CHANNEL Product Summary Part Number IRFE210 BVDSS 200V RDS(on) 1.5Ω ID 2.25A The leadless chip carrier (LCC) package represents the

IRFE9210

Abstract: LCC-18
Contextual Info: PD - 93989 IRFE9210 200V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS SURFACE MOUNT LCC-18 Product Summary Part Number IRFE9210 BVDSS -200V RDS(on) 3.0Ω ID -1.3A The leadless chip carrier (LCC) package represents the logical next step in the continual evolution of surface

IRFF9210

Abstract: 097A
Contextual Info: PD - 90382 REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF9210 200V, P-CHANNEL Product Summary Part Number IRFF9210 BVDSS -200V RDS(on) 3.0Ω ID -1.5A  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5575

Abstract: NTE5577 NTE5579 SCR 70A
Contextual Info: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

NTE5579

Abstract: NTE5575 NTE5577 "Silicon Controlled Rectifier" SCR 70A scr 125 amp
Contextual Info: NTE5575, NTE5577, NTE5579 Silicon Controlled Rectifier SCR 125 Amp, TO83 Electrical Characteristics: Repetitive Peak Forward Blocking Voltage, VDRM NTE5575 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

IXFH70N20Q3

Abstract: 70N20
Contextual Info: Advance Technical Information IXFT70N20Q3 IXFH70N20Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT70N20Q3 IXFH70N20Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 200V = 70A Ω ≤ 40mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings

Contextual Info: Bulletin PD-21176 12/06 70CRU02PbF Ultrafast Rectifier Features • • • • • • • • trr = 28ns IF AV = 70A @ TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop

Contextual Info: Bulletin PD-21176 12/06 70CRU02PbF Ultrafast Rectifier Features • • • • • • • • trr = 28ns IF AV = 70A @ TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop

Contextual Info: Bulletin PD-20619 rev. C 12/06 70CRU02 Ultrafast Rectifier Features • • • • • • • trr = 28ns IF AV = 70A @TC = 145°C VR = 200V Two Common-Cathode Diodes Ultrafast Reverse Recovery Ultrasoft Reverse Recovery Current Shape Low Forward Voltage Drop