Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    200V 5A PNP Search Results

    200V 5A PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    200V 5A PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TF561S

    Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l
    Text: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S


    Original     		TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A TF341M TF361M TF341S TF561S Thyristor to220 600v 12A TO220F TF541M tf541m 22 l PDF

    FZT956

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current


    Original     		FZT956 OT223 -200V -165mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT956 DS36119 PDF

    pnp 200v 5a switching characteristics

    Abstract: pnp 200v 2SA1250 200v 5a transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.


    Original     		2SA1250 -200V -10mA; -200V; pnp 200v 5a switching characteristics pnp 200v 2SA1250 200v 5a transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A


    Original     		2SA1250 -200V -10mA; -200V; PDF

    philips BDV64A

    Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
    Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO


    OCR Scan     		TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD675 BD677 BD679 philips BDV64A T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR PDF

    philips BDV64A

    Abstract: BDX67
    Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)


    OCR Scan     		bb53T31 TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 O-220AB BD679 BD681 philips BDV64A BDX67 PDF

    Untitled

    Abstract: No abstract text available
    Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi−Fi Power Amp, Audio Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE92 NTE93 PDF

    NTE92

    Abstract: NTE93 NTE93MCP pnp 200v
    Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi–Fi Power Amp, Audio Ourtput Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE92 NTE93 NTE92 NTE93 NTE93MCP pnp 200v PDF

    ZTX956

    Abstract: DSA003780
    Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio


    Original     		ZTX956 -100mA, 50MHz -100mA 100mA, -10mA, 100ms ZTX956 DSA003780 PDF

    2SC2607

    Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.


    Original     		2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent PDF

    2SC2607

    Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.


    Original     		2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor PDF

    2SA651

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA651 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.


    Original     		2SA651 -200V -25mA; -200V; 2SA651 PDF

    2SC3857

    Abstract: 2SA1493
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications


    Original     		2SA1493 -200V 2SC3857 -200V; 2SC3857 2SA1493 PDF

    2SC2607

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation


    Original     		2SA1116 -200V 2SC2607 -50mA; -200V; 2SC2607 PDF

    NTE58

    Abstract: NTE59
    Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE58 NTE59 NTE58 NTE59 PDF

    FZT855

    Abstract: FZT956 FZT955
    Text: SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT955 FZT956 ISSUE 3 – MARCH 2005 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps C


    Original     		OT223 FZT955 FZT956 FZT955 FZT855 FZT956 -100mA -10mA* FZT855 PDF

    2sa1333

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		2SA1333 MT-200 MT-200) -25mA -200V; 2sa1333 PDF

    2SA1250

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN


    Original     		2SA1250 -10mA 2SA1250 PDF

    2sa1333

    Abstract: 2sa133
    Text: Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2SA1333 MT-200 MT-200) -25mA -200V; 2sa1333 2sa133 PDF

    2SA1250

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2


    Original     		2SA1250 -10mA 2SA1250 PDF

    2SA1250

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2


    Original     		2SA1250 -10mA 2SA1250 PDF

    2SA1333

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2SA1333 MT-200 MT-200) -25mA -200V; 2SA1333 PDF

    2SA1169

    Abstract: 2sa116 MT200 package
    Text: SavantIC Semiconductor Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		2SA1169 MT-200 MT-200) -200V; 2SA1169 2sa116 MT200 package PDF

    2Sa1169

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base


    Original     		2SA1169 MT-200 MT-200) -200V; 2Sa1169 PDF