200V 50A TRANSISTOR Search Results

PA30U

Abstract: SCHEMATIC 8000w Power Amplifier PA30 S1000 VB-12 1000W mosfet 2000w power amplifier e180 cc APEX A75
Contextual Info: FEATURES • OUTPUT POWER 2000W CONT, 8000W PULSE • NO SECOND BREAKDOWN, MOSFET OUTPUT • l0 = 50A CONTINUOUS, 100A PULSE • WIDE SUPPLY RANGE, 30V to 200V • 45 V/ns TYPICAL SLEW RATE • VERSATILE PROGRAMMABLE CURRENT LIMIT • THERMAL PROTECTION, OVERTEMP OUTPUT

Contextual Info: 100 AM P ER ES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON IMPIM TRANSISTOR SYMBOL PT-3520 Col lector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current 'C M * D. C. Collector Current •c 50A Power Dissipation at 25°C Case Temperature

Contextual Info: POWER OPERATIONAL AMPLIFIER PA17 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 600 WATTS • HIGH VOLTAGE, HIGH CURRENT — 200V 50A CONTINUOUS, 80A PULSE • HIGH SLEW RATE — 50V/µS

SONAR 850 alarm

Abstract: PA17 850W
Contextual Info: POWER OPERATIONAL AMPLIFIER PA17 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM FEATURES 800 546-APEX (800) 546-2739 PRELIMINARY • HIGH INTERNAL DISSIPATION — 850 WATTS • HIGH VOLTAGE, HIGH CURRENT — 200V 50A CONTINUOUS, 100A PULSE • HIGH SLEW RATE — 50V/µS

soc 117a

Abstract: 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3
Contextual Info: Contran [^ ©tUKSTT © Ä¥ÄIL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 79 ¿1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

2N6277 equivalent

Abstract: Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279
Contextual Info: SOLITRO N DEVICES INC TS DEyfl3bflb0a OOOSfiS^ Q f ° [FIEiODOJ ? ©ATM. ® Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 79) CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum

irf 100v 200A

Abstract: irf 345 irg4pc50sdpbf C-150
Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

IGBT 200V 50A

Contextual Info: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz • IGBT co-packaged with HEXFREDTM ultrafast,

Contextual Info: 100 AMPERES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON NPN TRANSISTOR SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current •CM* D. C. Collector Current Power Dissipation at 25°C Case Temperature

pt7511

Contextual Info: “BIG IDEAS IN BIG POWER” H i • PowerTech 90 A M P E R E S PT-7511 SILICON IMPIN I TRANSISTOR MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage V CEO Emitter-Base Voltage V EBO Peak Collector Current 'c m * D.C. Collector Current

transistor c 2060

Abstract: 2N6277 SOLITRON 179
Contextual Info: SOLITRON DEVICES INC 3 DE I B3bñbD2 PDQ5S73 4 fit. «/ ELEMENT NUMBER 179 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R LY 79 5 0 . 0 0 0 Â Aluminum Collector: polished Silicon

PowerTech

Abstract: 200V 50A TRANSISTOR PT-7511 pt7511
Contextual Info: 17E D 7 2 ^ û 7 t.4 □□□□301 •i “BIG IDEAS IN BIG POWER" 1 ■ PowerTech PObJERTECH INC 90 AMPERES P T - y 5 ii SILICON IMPIM TRANSISTOR M A X IM U M R A T IN G S SYM BOL Collector-Base Voltage V CBO Collector-Emitter Voltage V CEO Emitter-Base Voltage

powertech

Contextual Info: BIG IDEAS ii* BIG POWER" • PowerTech SO AMPERES P T - 'Z S H SILICaiM NPN TRANSISTOR MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO C o llecto r-E m itte r Voltage V CEO Emitter-Base Voltage V EBO Peak C ollector C urrent 'c m * D.C. C ollector C urrent

Contextual Info: SEMELAB LTD 3 7E D • Ô1331Ô7 SEMELAB JUL 0 6 ¡988 BUS 51 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for low voltage, high speed, power switching MECHANICAL DATA Dimensionsinmm FEATURES • LOW Vce sat * • 1-6 • FAST SWITCHING • HIGH SWITCHING CURRENTS

Contextual Info: ^otttran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 79 CONTACT METALLIZATION B a se a n d em itter: > 50,000 A A lum inu m C ollector: G o ld (P o lish e d silico n or "C h ro m e N ickel S i lv e r " also a v a ila b le )

RUFD

Abstract: SGL50N60RUFD
Contextual Info: IGBT SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general

BUX22 equivalent

Abstract: SDT96306
Contextual Info: at SOLITRON DEVICES INC 7" - 7 j - o r FË^fl3t.at.05 oooasTa 3 I " - ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, HIGH CURRENT NPN EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 Â Aluminum Collector: Polished Silicon

transistor 05c

Abstract: 800PF 2N6325 SDT96301 SDT96308 8A550A
Contextual Info: ^/olitron [p|£ì |D lJ)(ST Ä T Ä IL © ( M EDIUM TO HIGH VOLTAGE, HIGH CURRENT Devices. Inc. CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) cf] CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

transistor PT 4500

Contextual Info: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .

SDT96308

Abstract: sdt96
Contextual Info: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)

RUFD

Abstract: SGL50N60RUFD
Contextual Info: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

Contextual Info: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

AN9020

Abstract: RUFD Fairchild 9020 IGBT 100A
Contextual Info: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

NPN Transistor 50A 400V

Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Contextual Info: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on: