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    200V 50A MOS FET Search Results

    200V 50A MOS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    200V 50A MOS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    Untitled

    Abstract: No abstract text available
    Text: 2SK3609-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series Outline Drawings mm 外形寸法図 OUT VIEW Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照


    Original     		PDF 2SK3609-01

    FS50SM-5A

    Abstract: FS50SM-5A-A8
    Text: FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications


    Original     		PDF FS50SM-5A REJ03G0277-0100 FS50SM-5A-A8 FS50SM-5A FS50SM-5A-A8

    power supply 100v 30a schematic

    Abstract: 2SK3597-01
    Text: 2SK3597-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings mm 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Fig.1 Ｐ矢視図参照


    Original     		PDF 2SK3597-01 power supply 100v 30a schematic 2SK3597-01

    200V 50A mos fet

    Abstract: power supply 100v 30a schematic 2SK3596-01L
    Text: 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3596-01L 200V 50A mos fet power supply 100v 30a schematic

    2SK3608-01L

    Abstract: 100V 100A mos fet 200V 50A mos fet
    Text: 2SK3608-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3608-01L 100V 100A mos fet 200V 50A mos fet

    9n90c

    Abstract: 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS
    Text: Power MOS -FET Selection Guide MOS-FET 2007. 2007. First First Version Version Http://www.kec.co.kr KEC-H Corp. Product classification First & Best First & Best MOSFET MOSFET SS-MOSFET MOSFET Trench TrenchMOSFET MOSFET Planar PlanarMOSFET MOSFET Pw Pw<<1W


    Original     		PDF 2N7000 2N7000A 2N7000K 70Max 45Max 55Max 80Max 9n90c 9n50c IGBT 20N50 kmb*050n60p 7N65C 5n50c smd diode S4 58a 2N60C 2N60 MOSFET SMPS str TV SMPS

    Untitled

    Abstract: No abstract text available
    Text: 2SK3613-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER FUJI POWER MOS FET MOSFET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof


    Original     		PDF 2SK3613-01

    ZD 103

    Abstract: 200V 50A mos fet FS50SM-5A FS50SM-5A-A8
    Text: FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications


    Original     		PDF FS50SM-5A REJ03G0277-0100 ZD 103 200V 50A mos fet FS50SM-5A FS50SM-5A-A8

    Untitled

    Abstract: No abstract text available
    Text: FS50SM-5A High-Speed Switching Use Nch Power MOS FET REJ03G0277-0100 Rev.1.00 Aug.20.2004 Features • • • • Drive voltage : 10 V VDSS : 250 V rDS ON (max) : 0.068 Ω ID : 50 A Outline TO-3P 2, 4 4 1. 2. 3. 4. 1 1 2 Gate Drain Source Drain 3 3 Applications


    Original     		PDF FS50SM-5A REJ03G0277-0100

    diode FR 105

    Abstract: 2SK3613-01
    Text: 2SK3613-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FUJI POWER MOS FET Super FAP-G Series OUT VIEW Outline Drawings Drawings mm (mm) 外形寸法図 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof


    Original     		PDF 2SK3613-01 voltage50 diode FR 105 2SK3613-01

    200V 50A mos fet

    Abstract: diode sj n-channel 250V power mosfet 2SK3556-01L
    Text: 2SK3556-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		PDF 2SK3556-01L 200V 50A mos fet diode sj n-channel 250V power mosfet

    2SK3612-01L

    Abstract: 200V 50A mos fet
    Text: 2SK3612-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3612-01L O-220AB 200V 50A mos fet

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    RJK03P7DPA

    Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1
    Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position


    Original     		PDF 0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1

    Untitled

    Abstract: No abstract text available
    Text: FK30SM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1402-0200 Previous: MEJ02G0204-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 250 V rDS (ON) (max) : 0.108 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A


    Original     		PDF FK30SM-5 REJ03G1402-0200 MEJ02G0204-0101) PRSS0004ZB-A

    Untitled

    Abstract: No abstract text available
    Text: FK30SM-6 High-Speed Switching Use Nch Power MOS FET REJ03G1403-0200 Previous: MEJ02G0214-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 300 V rDS (ON) (max) : 0.143 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A


    Original     		PDF FK30SM-6 REJ03G1403-0200 MEJ02G0214-0101) PRSS0004ZB-A

    Untitled

    Abstract: No abstract text available
    Text: FK30SM-5 High-Speed Switching Use Nch Power MOS FET REJ03G1402-0200 Previous: MEJ02G0204-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 250 V rDS (ON) (max) : 0.108 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A


    Original     		PDF FK30SM-5 REJ03G1402-0200 MEJ02G0204-0101) PRSS0004ZB-A

    Untitled

    Abstract: No abstract text available
    Text: FK30SM-6 High-Speed Switching Use Nch Power MOS FET REJ03G1403-0200 Previous: MEJ02G0214-0101 Rev.2.00 Jul 07, 2006 Features • • • • VDSS : 300 V rDS (ON) (max) : 0.143 Ω ID : 30 A Integrated Fast Recovery Diode (MAX.) : 150 ns Outline RENESAS Package code: PRSS0004ZB-A


    Original     		PDF FK30SM-6 REJ03G1403-0200 MEJ02G0214-0101) PRSS0004ZB-A

    1D50A

    Abstract: SDF50NA20 D250 200V 50A mos fet
    Text: Æwtïon PRODUCT D E V IC E S ,IN C . CÂTÂL N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 200V , 5 0 A , 0.05 • SYMBOL UNITS Dr a i n - s o u r c e V o l t . l D ra i n - G a t e Vo I ta g e ( Rgs = 1 . OMn) ( 1 ) G a te -S o u rce V o lta g e


    OCR Scan     		PDF Tc-26 300mS. SDF50NA20 MIL-STD-883 1D50A D250 200V 50A mos fet

    2SK1463

    Abstract: T03P 5s20 S 10 S T
    Text: Ordering number: EN 34 6 6 _ 2SK1463 N-Channel MOS Silicon FET Very High-Speed Sw itching A pplications F eatures • Low ON-state resistance. • Very high-speed switching. • Converters. A bsolute Maximum Ratings at T a= 25°C Drain to Source Voltage


    OCR Scan     		PDF EN3466 2SK1463 T03P 5s20 S 10 S T

    2SK1454

    Abstract: DCS05
    Text: Ordering number:EN 3457 2SK1454 N 0 .3 4 5 7 SANYO N-Channel MOS Silicon FET i Very High-Speed Switching Applications F eatures • Low ON-state resistance. • Very high-speed switching • Converters. A bsolute M aximum R atings at Ta = 25°C Drain to Source Voltage


    OCR Scan     		PDF 2SK1454 DCS05

    Untitled

    Abstract: No abstract text available
    Text: Æiitwan PRODUCT DEVICES,INC. 1177 BLUE HERON BLVD. • RIVIERA BEACH. FLORIDA 33404 TEL: 407 848-4311 » TLX: 51-3435 • FAX: (407) 863-5946 N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 4 0 0 V, SYMBOL UN ITS VDSS 400 Vdc VDGR 400 Vdc


    OCR Scan     		PDF F100NA40

    OLOA

    Abstract: 2SK623
    Text: blE D • 2SK623 MMTbEDS OQiailü ÖSb ■ H I T M HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING 02 ■ FEATURES • Low O n-R esistance • High S p ee d S w itching 1 Gaie 2 Dram i Flange ) 3. Source I Dimensions in mm )


    OCR Scan     		PDF 00L311D DD13113 -2SK623 OLOA 2SK623