200V 30A TRANSISTOR Search Results

AVALANCHE TRANSISTOR

Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Contextual Info: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds

Contextual Info: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate

Contextual Info: ASSESS? RURG3010CC, RURG3015CC, RURG3020CC Aprii 1995 30A, 100V - 200V Ultrafast Dual Diodes Features Package • Ultrafast with Soft Recovery . <45ns • Operating Temperature. . . . +175°C • Reverse Voltage Up to . . ,200V JEDEC STYLE TO-247 ANODE 1

IRF250

Abstract: irf250 datasheet IRF 543 MOSFET JANTX2N6766 JANTXV2N6766 avalanche diode 30A IRF250 TO-247
Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Contextual Info: RURP3010, RURP3015, RURP3020 ¡11995 30A, 100V - 200V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated

Contextual Info: ASSESS? RURH3010CC, RURH3015CC, RURH3020CC 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V

Contextual Info: PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766  HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number IRF250 BVDSS 200V RDS(on) 0.085Ω ID 30A The HEXFETtechnology is the key to International

Mosfet

Abstract: SSPL2090
Contextual Info: SSPL2090 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 80mΩ(typ.) ID 30A TO-220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

Contextual Info: RURG3010, RURG3015, RURG3020 H A R R IS X Semiconductor 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery. <45ns JEDEC STYLE 2 LEAD TO-247 • Operating

IRFP250R

Abstract: irfp 250r IRFP251R p250a IRFP252R IRFP253R IRFP25
Contextual Info: Rugged Power MOSFETs_ IRFP250R, IRFP251R, IRFP252R, IRFP253R File Num ber 2016 Avalanche Energy Rated N-Channel Power MOSFETs 25A and 30A, 150V-200V rDs on = 0.0850 and 0.1200 N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■ ■

RURG3020

Abstract: TA09645
Contextual Info: RURG3020 Data Sheet January 2002 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG3020CC

Abstract: RURG3020C TA09645
Contextual Info: RURG3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

DSA0039858

Abstract: BAZ-3882-NCAZ RURH3020CC TA09645
Contextual Info: RURH3020CC Data Sheet January 2000 File Number 2773.4 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated,

RURP3020

Abstract: TA09645
Contextual Info: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,

TA09645

Abstract: RURG3020
Contextual Info: RURG3020 Data Sheet January 2000 File Number 3277.3 30A, 200V Ultrafast Diode Features The RURG3020 is an ultrafast diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial

RURP3020

Abstract: TA09645
Contextual Info: RURP3020 Data Sheet January 2000 File Number 2777.5 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted,

RURP3020

Abstract: TA09645
Contextual Info: RURP3020 Data Sheet January 2002 30A, 200V Ultrafast Diode Features The RURP3020 is an ultrafast diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

fls2

Abstract: PPR1356 PPR1357 PPR1358 PPR1359
Contextual Info: OD II I High Efficiency, 30A Center-Tap Diodes PPR1356 PPR1357 PPR1358 PPR1359 FEATURES ABSOLUTE MAXIMUM RATINGS • Very Low Forward Voltage Peak Inverse Voltage, PPR1356 200V • Very Fast S w itching Speed Peak Inverse Voltage, PPR1357 300V • Convenient Package

RURH3020CC

Abstract: TA09645
Contextual Info: RURH3020CC Data Sheet January 2002 30A, 200V Ultrafast Dual Diode Features The RURH3020CC is an ultrafast dual diode trr < 45ns with soft recovery characteristics. It has a low forward voltage drop and is of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

RURG3020C

Abstract: RURG3010CC RURG3020CC RURG3015C RURG3015CC TA9645
Contextual Info: RURG3010CC, RURG3015CC, RURG3020CC S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . <45ns JEDEC STYLE TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

RURP3010

Abstract: RURP3015 RURP3020 power transistor 200V, 30A
Contextual Info: RURP3010, RURP3015, RURP3020 S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-220AC ANODE • +175oC Rated Junction Temperature CATHODE CATHODE (FLANGE)

transistor A2

Abstract: tb 120 RURH3010CC RURH3015CC RURH3020CC
Contextual Info: RURH3010CC, RURH3015CC, RURH3020CC S E M I C O N D U C T O R 30A, 100V - 200V Ultrafast Dual Diodes April 1995 Features Package • Ultrafast with Soft Recovery Characteristic tRR < 45ns JEDEC TO-218AC ANODE1 CATHODE ANODE2 • +175oC Rated Junction Temperature

rurg3020c

Abstract: ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES RURG3020CC TA09645
Contextual Info: RURG3020CC Data Sheet January 2000 File Number 3552.3 30A, 200V Ultrafast Dual Diode Features The RURG3020CC is an ultrafast dual diode with soft recovery characteristics trr < 45ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.

RURG3015

Contextual Info: Œ HARRIS S E M I C O N D U C T O R RURG3010, RURG3015 RURG3020 January1994 30A, 100V - 200V Ultrafast Diodes Package Features JEDEC STYLE 2 LEAD TO-247 TOP VIEW • Ultrafast with Soft • Operating