200MA 350 VOLTS DIODE Search Results

IXTH02N250

Abstract: IXTV02N250S PLUS220SMD DS100187B 02N250
Contextual Info: IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

DS100187A

Abstract: IXTV02N250S IXTH02N250 PLUS220SMD 02N250
Contextual Info: Preliminary Technical Information IXTH02N250 IXTV02N250S High Voltage Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 2500V 200mA Ω 450Ω TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 2500 V

IXTA02N250

Contextual Info: Advance Technical Information IXTA02N250HV High Voltage Power MOSFET VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263AB G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V

IXTA02N250

Contextual Info: High Voltage Power MOSFETs IXTA02N250 IXTH02N250 IXTV02N250S VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTA02N250

Contextual Info: IXTA02N250 IXTH02N250 IXTV02N250S High Voltage Power MOSFETs VDSS ID25 RDS on = = ≤ 2500V 200mA Ω 450Ω N-Channel Enhancement Mode Fast Intrinsic Diode TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 2500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

SD103AWS

Abstract: 30V 200mA schottky barrier diode SD103CWS SD103BWS
Contextual Info: SD103AWS/SD103BWS/SD103CWS SURFACE MOUNT SCHOTTKY BARRIER DIODES SMALL SIGNAL SCHOTTKY DIODES 350m AMPERES 20~40 VOLTS SOD-323 .091 2.30 1.63(2.70) .063(1.60) .071(1.80) .009(0.25) .016(0.40) 1 .045(1.15) .053(1.35) 2 0.15R .031(0.80) .039(1.00) .0035(0.089)

Contextual Info: OPTO DIODE CORP SSE D • bflOmfi OOOOOflfl R3b * O P D HIGH-POWER GaAIAs IR EMITTERS OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with silicon detectors • Hermetically sealed TO-46 package • 100% test for minimum power requirement

Opto Diode

Abstract: OD-24F OD-24X24-C
Contextual Info: OPTO DIODE CORP 5SE D • b flo m a □□□□□aa hopd HIGH-POWER GaAIAs IR EMITTERS OD-24F FEATURES • High current capability • 880nm peak emission for optimum matching with silicon detectors • Hermetically sealed T O -46 package • 100% test for minimum power requirement

kvp 68A

Abstract: XMR5 xlr10
Contextual Info: DIODES DIODES, HIGH VOLTAGE, AXIAL LEAD Standard — Fast — Ultra-Fast Recovery CURRENT VOLTS RECOVERY ns SURGE(A) SERIES PAGE STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD STANDARD 300 5 25-35 15 12 10 8 5 3W HV EF, EG, EH EK EM EP ER

Kvp 26A

Abstract: kvp 3a kvp 42 DIODE kvp 34 DIODE 100-200KV kvp diode kvp 68A hv rectifiers diode kvp 26 DIODE 8ph ZENER
Contextual Info: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000

CH781UGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH781UGP SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.

SOT-363 marking jf

Abstract: 10V Schottky Diode IR 30 D1
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH781UPT SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.

MELF DIODE color bands

Abstract: LL103A LL103B LL103C minimelf diodes color
Contextual Info: LL103A/B/C Schottky Barrier Diodes Schottky Barrier Diode 350 mAMPERES 20-40 VOLTS P b Lead Pb -Free Features: * Small surface mounting type * High reliability * Low reverse current and low forward voltage * Low current rectification and high speed switching

kvp 42 DIODE

Abstract: kvp 68A kvp diode kvp 34 DIODE kvp 30 DIODE kvp 88 diode kvp 23A Kvp 26A kvp 26 DIODE 100-200KV
Contextual Info: NEW E-MAIL ADDRESS DIODES EDI-SALES@INTERNETMCI.COM AXIAL LEAD DIODES CURRENT PRV VOLTS RECOVERY (nS) SURGE (A) SERIES PAGE STANDARD RECOVERY. PRINTED CIRCUIT MOUNT 6A 6A 6A 3A 2A 100 to 600mA 220mA 200mA 175mA 150mA 100mA 50 to 80mA 50mA 50-1000 50-1000

SD103BW

Contextual Info: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

SD103AW

Contextual Info: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

Contextual Info: RECTRON SD103BW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

Contextual Info: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

Contextual Info: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA

zener diode 12v 0.5 w

Abstract: 12v zener diode code 13w marking code marking code 13W zener 7.1 V MA344
Contextual Info: Central BZX85C3V3 THRU BZX85C33 TM Semiconductor Corp. SURFACE MOUNT 1.3W SILICON ZENER DIODE 3.3 VOLTS THRU 33 VOLTS Description: The CENTRAL SEMICONDUCTOR BZX85C3V3 Series are silicon Zener diodes. These high quality voltage regulating diodes are designed for

kvp smd

Abstract: kvp 42 DIODE kvp 26A M kvp diode 2005C 1.5 khp SMD kvp XMR5 0709a PKF SMD
Contextual Info: AXIAL LEAD DIODES CURRENT P R V VO LTS R E C O V E R Y (nS) SU R G E (A) S E R IE S PAGE 50-1000 50-1000 50-1000 50-1000 2000 to 3000 1000 to 4000 9000 4500 to 6000 7000 to 8000 9000 to 10000 11000 to 12000 1000 to 5000 10000 to 15000 STANDARD STANDARD STANDARD

schottky marking S4

Abstract: SD103CWS SD103AWS SD103BWS
Contextual Info: SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS Mechanical Data:

Contextual Info: SD103AWS/SD103BWS SD103CWS Surface Mount Schottky Barrier Diodes * “G” Lead Pb -Free Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS

Contextual Info: WE IT R ON Surface Mount Schottky Barrier Diodes Features: *Low Forward Voltage *Very Small Conduction Losses *Schottky Barrier Diodes Encapsulated in a SOD-323 Package SD103AWS/SD103BWS SD103CWS SMALL SIGNAL SCHOTTKY DIODES 350 mAMPERES 20-40 VOLTS Mechanical Data: