200II Search Results

CA324

Abstract: HA-4741 HA5232 HA5232IJ HA5232IP HA5234 LT1013 LT1014 OP200 OP400
Contextual Info: U J HA5232, HA5234 H a r r is " S E M I C O N D U C T O R a PRELIMINARY Precision Dual and Quad Operational Amplifiers March 1993 Description Features • Low Offset Voltage. .200iiV Max • Low Offset D rift. 2jiV/°C • Low Supply Current.

relay 5v 30a

Abstract: F D203 L5A relay ID202 ID300 ID301
Contextual Info: ID200-ID203 ID300-ID301 SCRs 1.6 Amp, Planar FEATURES • Voltage Rating: to 200V • Max. Gate Trigger Current: 200iiA • Hermetically Sealed Metal Can • Planar Passivated Construction DESCRIPTION This Data Sheet describes Microsemi's line of hermetically sealed industrial SCRs

Contextual Info: HA5232 HA5234 HARRIS a S E M I C O N D U C T O R PRELIMINARY Precision Dual and Quad Operational Amplifiers October 1992 Description Features • .200iiV Max Low Offset V oltage. • Low Offset D r if t . 2(iV/°C • Low Supply C urren t.

NZ70

Abstract: TC511001 TC511001AZ adata a55 diagram 4ao5
Contextual Info: TOSHIBA -CLOGIC/MEMORY} 14E D • i-DTVEMß DOlfiTOS S ■ T -46-23-15 TOSHIBA MOS MEMORY PRODUCTS TC511001AP/AJ/AZ-70, TG511001 AP/AJ/flZ-80 TC511001AP/AJ/AZ-10 DESCRIPTION The TC511001AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by

LM373

Abstract: MC1303L LM566 "direct replacement" transistor BD 540 LYS MFC6030 LM566 equivalent LM3039 SN72558P LM370 SN72741P
Contextual Info: Edge Index by Product Family Here is the new Linear Data Handbook from National. It gives complete specifications for devices useful in building nearly all types of electronic systems, from communica­ tions and consumer-oriented circuits to precision instrumentation and computer designs.

Contextual Info: ANALOG DEVICES 10-Bit Monolithic D/A Converter AD DAC100 FEATURES Complete Current Output Converter High Stability Buried Zener Reference Single Chip Monolithic Construction Wide Supply Range ±6 V to ± 18V Trimmed Output Application Resistors Fast Settling - 225ns 8 Bits , 375ns (10 Bits)

Contextual Info: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as

Contextual Info: T O S H IB A D IG IT A L IN T E G R A T E D CIRCUIT INTEGRATED CIRCUIT TO SHIBA T C 5 2 8 1 2 8 \ P / A J- 1 0 , TC528128AP / A J -12 TECHNICAL DATA SILIC O N G A T E C M O S P R E L IM IN A R Y 131,072W ORDSx88ITS M U LT IPO R T D RA M DESCRIPTION The TC528128AP/ A J is a CMOS multiport memory equipped with a 131,072-words by 8-bits

Contextual Info: r r u n m m TECH N O LO G Y C o n s t a n t - C u r r e n t/ V o lt a g e H ig h E ffic ie n c y B a tte ry C h a r g e r FCRTURCS D C S C R IP T IO n • Simple Charging of Li-Ion, NiMH and NiCd Batteries ■ Very High Efficiency: Up to 97% ■ Precision 0.5% Charging Voltage Accuracy

VCC-950

Contextual Info: GENNUM GENU NX “I I G X 95 33 Serial Digital 8x9 Crosspoint D A T A SHEET FEATURES DEVICE DESCRIPTION • operation beyond 622 Mb/s The GX9533 is a high speed 8x9 serial digital crosspoint. An expansion input port eases the design of larger switching matrices by reducing PCB layers and eliminating the need

DG508 connection diagram

Abstract: HI508 DG508 IH5108 IH5108CJE IH5108CPE IH5108MJE G00U s2801
Contextual Info: IH 5 1 0 8 8 -Channel Fault Protected CMOS Analog M ultiplexer IM R D IL FEATURES GENERAL DESCRIPTION • • • • • • • The IH51CI8 is a diiilectrically isolated CMOS m onolithic analog multiplexer, designed as a plug-in replacement forthe DG508 and sim ilar devices, but adding fault protection to the

Contextual Info: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability

Contextual Info: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi­

Contextual Info: SEMIKRDN V rsM V rrm V drm V -dt ÌJcr Ithms (maximum values for continuous operation 3000 A I 5000 A Itav (sin. 180; T case — . . . ; D SC) 1500 A (55 °C) 2450 A (55 °C) V V 2300 2200 1000 2700 2600 1000 SKT 1400/26 E SKT 2000/26 E 2900 2800 1000 SKT 1400/28 E

cascode miller capacitance

Abstract: ka band transistor
Contextual Info: Audio Dual Matched NPN Transistor SSM-2210 ANALOG DEVICES FEATURES • • • • • • • Very Low Voltage N o is e @ 100Hz, InV/VHz MAX Excellent Current Gain Match.0.5% TYP Tight VBE Match VQS . 200^V MAX

SiS 486 schematic

Contextual Info: Accelerator Series FPGAs - ACT 3 Family Features • Replaces up to twenty 32 macro-cell CPLDs • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent P L IJ Gates • Replaces up to one hundred 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic

LV 20-P

Abstract: 78L05
Contextual Info: amp* 2840 20 Bits at 100 m Sec 2841 20 Bits at 500 mSec 2842 20 Bits at 1 Sec 20 BIT A /D CONVERTER SERIES ! I y Features 20 Bit Integrating A /D Programmable Conversion Time Continuous sampling <10nV Sensitivity D escription M odels 2840,2841 & 2842 are complete, integrating

Contextual Info: european space agency agence spatiale européenne Pages 1 to 66 INTEGRATED CIRCUITS, SILICON MONOLITHIC, CMOS SILICON GATE, STATIC 512x9 BIT FIRST IN, FIRST OUT MEMORY WITH 3-STATE OUTPUTS, BASED ON TYPE M67201FV ESA/SCC Detail Specification No. 9301/041

LA5525

Abstract: SANYO sep flsri 1417A
Contextual Info: # IS ].« = a - * Nû*5H17 t í < * '* .» . g • > *?• / - t * w i i » L A 5 5 2 5 - / j D c = e - 9 'A m m m w U J* « it • s o f f i l a oc f •e/i De ít* - í . t k *>*> v * p a i m v b r i / =1^ 1 c í | i ? coü s ftiffii¡c # - « s - c * % .

TRANSISTOR R2002

Abstract: Zener 2458 Battery charger 48 volt 593D LT1510 LT1511 LT1769 LT1769CGN LT1769IGN MBRS130LT3
Contextual Info: uTECHNOLOGY im LT1769 Constant-Current/ Constant-Voltage 2ABattery Charger with Input Current Limiting K fìT U R C S D C S C R IP TIO n • Simple Solution to Charge NiCd, NiMH and Lithium Rechargeable Batteries—Charging Current Programmed by Resistors or DAC

MB85260

Contextual Info: FUJITSU IM X MB85260-10 8 DRAM MODULE MB85260-12 TS033-A882 Feb. 1988 1,048,576 X 8 BIT DYNAMIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85260 is a fully decoded, dynamic CMOS random access memory module with eight MB81C1000, in 26-pin SOJ packages, and eight .22yiF decoupling capa­

DIP44-pin

Abstract: ha1681
Contextual Info: HA16816NT/MP SLIC IC for Key Telephone Applications Features • Basic Functions: Internal battery feed control B , loop super­ vision (S) and 2w-4w conversion (H) • Constant Current Feed: +24V Supply voltage • Internal darlington power transistor • Ring trip detection

Contextual Info: Transistors Digital transistors built-in resistors DTC144TE / DTC144TUA / DTC144TKA DTC144TSA •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Built-in bias resistors enable the configuration of an inverter circuit 1 6 ±0.2 DTC144TE 1.0 ± 0.1 1

replacement for 2n2905

Abstract: EL2004 EL2005 EL2005CG EL2005G MIL-I-45208A
Contextual Info: EL2005/EL2005C élantec HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS F e a tu r e s • Low inpu t current— 50 pA • Low offset and drift— 2 m V /25 jaV/°C • H igh slew rate— 1500 V/|US • F ast rise and fall tim e— 2.5 ns • H igh in p u t resistance— 1000 G il