200A DIODE Search Results

power diode 200A

Abstract: welding rectifier 200a rectifier diode
Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)200A MDF R 200A is a diode with flat mounting base which is designed for use in various rectifier applications. IF AV 200A, VRRM 500V Easy Construction with Anode F Type and Cathode R type. High reliability by glass passivation

Contextual Info: DIODE 200A Avg 800 Volts ฀ ฀ ฀ ฀ ฀ ฀ PD200S8

Contextual Info: DMM,1KV AC/DC DM-200A (CALIB) Digital Multimeter Cat No: DM-200A-C UPC No: 783310357568 Description • • • • • • • • • • • Measures Voltage, Current, Resistance And Frequency Tests Continuity And Diodes Backlit LCD With 6,000 Count Display

1SR35-100

Contextual Info: 3t — K/Diodes 1SR35-100A/1SR35-200A/1SR35-400A 1SR35-1OOA/1SR35-200A 1SR35-400A Silicon Diffused Junction Glass-Sealed Rectifying Diodes 1 * '- 7 3 JEDEC : DO- 41 )„ 2) • Features 1) Glass sealed type (JEDEC : DO41). 2) High reliability. • JBÎÊ

Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)20QA M D F(R )200A is a diode with flat mounting base which is designed for use in various rectifier applications. • If(av) = 200A, VrrM= 500V • Easy Construction with Anode (F) Type and Cathode (R) Type. • High reliability by glass passivation

Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V

200A thyristor gate control circuit

Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage . 400/800/1200/1600V

Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)200A MDF （R） 200A is a diode with flat mounting base which is designed for use in various rectifier applications. 4-φ7 32 2 VRRM＝500V ● Easy Construction with Anode （F） Type and Cathode （R） type. ● High reliability by glass passivation

IGBT 600V 200A

Abstract: diode 300v 200A 18KHZ SIM200D06AV1 smps 200a diode rjc rcs
Contextual Info: SIM200D06AV1 Preliminary “HALF-BRIDGE” IGBT VCES = 600V Ic= 200A Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls VCE ON typ. = 1.8V @Ic= 200A ▪ VVVF inverters design technology ▪ Inverter-type welding MC over 18KHZ ▪ Low VCE (sat)

mdf 24

Contextual Info: DIODE NON-ISOLATED TYPE MDF(R)200A MDF （R） 200A is a diode with flat mounting base which is designed for use in various rectifier applications. 4-φ7 32 2 VRRM＝500V ● Easy Construction with Anode （F） Type and Cathode （R） type. ● High reliability by glass passivation

18KHZ

Abstract: SIM200D06AV2
Contextual Info: SIM200D06AV2 Preliminary “HALF-BRIDGE” IGBT VCES = 600V Ic= 200A Feature Applications ▪ Smart field stopper +Trench ▪ Motor controls VCE ON typ. = 1.6V @Ic= 200A ▪ VVVF inverters design technology ▪ Inverter-type welding MC over 18KHZ ▪ Low VCE (sat)

Contextual Info: STV270N4F3 N-channel 40V - 1.25mΩ - 200A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40V < 1.5mΩ 200A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance

1SR124-400A

Contextual Info: 1SR124-1OOA/1SR124-200A/1SR124-400A K/Diodes 1S R 1 24-1 OOA/1 S R I 24-200A 1S R I 24-400A -> <j □ <* - k Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diodes • ^J^j'&HI/'Dim ensions U nit: mm 1) (JEDEC : DO41 ) o 2) ra iS S (trr= 0 .4

200A thyristor gate control circuit

Abstract: Thyristor 1600V E80276 HIGH VOLTAGE THYRISTOR
Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H • IT AV • IF (AV) • VRRM • • • • Average on-state current . 200A Average forward current . 200A Repetitive peak reverse voltage

1SR35-400A

Abstract: 1SR35-100A 1SR35-200A SR35-200A
Contextual Info: 1SR35-1OOA/1SR35-200A/1SR35-400A — K /D iodes 1SR35-1 OOA/1 SR35-200A 1SR35-400A •> 'j 3 •< t - k Silicon Diffused Junction Glass-Sealed Rectifying Diodes • 1 Dimensions Unit : mm) -5 (JE D E C : DO41)» 2) &o • Features 1) G lass se a le d ty p e (JEDEC : D O 41).

Contextual Info: MITSUBISHI THYRISTOR MODULES TM200RZ/EZ/GZ-M,-H,-24,-2H HIGH POWER GENERAL USE INSULATED TYPE TM200RZ/EZ/GZ-M,-H,24,-2H It av Average on-state current 200A Average forward current 200A V rrm Repetitive peak reverse voltage 400/800/1200/1600V V drm Repetitive peak off-state voltage

YAZAKI7122-1407

Abstract: PBT-GF30 FR
Contextual Info: EP AEP (10A, 20A and 80A types) 200A type has been added. High Capacity of Max. 1,000 V DC Cut-off Possible EP RELAYS (AEP) FEATURES 10A PC board type 10A TM type 20A TM type 80A type New 200A type 300A type RoHS compliant 1. High-voltage, high-current control

igbt 1200v 600a

Abstract: IGBT DRIVE 600V 300A 1MBI150NH-060 1MBI150NK-060 1MBI200N-120 1MBI200NH-060 1MBI200NK-060 1MBI300N-120 M127 600V 200A TR
Contextual Info: N Series,1 in one Low-noise,High-speed switcing Device Type Features Page VCES IC 1MBI150NH-060 600V/150A Chopper Module 4 600V max 150A max 1MBI150NK-060 600V/150A Chopper Module 4 600V max 150A max 1MBI200N-120 1200V/200A 1 in one-package 4 1200V max 200A max M127

RM200DG-130S

Contextual Info: MITSUBISHI HIGH VOLTAGE DIODE MODULE RM200DG-130S HIGH POWER SWITCHING USE INSULATED TYPE High Voltage Diode Module RM200DG-130S ● IF . 200A ● VRRM . 6500V

1sr124-100a

Abstract: 1sr124-400 1SR124
Contextual Info: 1SR124-1OOA/1SR124-200A/1SR124-400A X — K/Diodes 1SR 124-1 OOA/1 S R 124-200A 1S R 1 2 4 -4 0 0 A Silicon Diffused Junction Glass-Sealed High-Speed Rectifying Diodes • ^ J fi^ tiiE I/D im e n s io n s U n it : mm • « ft 1) (JEDEC : DO41)» 2) ¡ f i l l

CM200DX-24A

Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /

Contextual Info: MITSUBISHI IGBT MODULES CM200RX-12A HIGH POWER SWITCHING USE CM200RX-12A ¡IC . 200A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake

CM200DX-24A

Contextual Info: MITSUBISHI IGBT MODULES CM200DX-24A HIGH POWER SWITCHING USE CM200DX-24A ¡IC . 200A ¡VCES . 1200V ¡Dual ¡Flatbase Type / Insulated Package /

1MBI200F-120

Abstract: M116
Contextual Info: 1MBI200F-120 200A IGBT Module 1200V / 200A 1 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series