20070926A Search Results

Contextual Info: IXUN350N10 Trench Power MOSFET Very low RDS on VDSS = 100 V ID25 = 350 A RDS(on) typ. = 1.9 mΩ SOT-227 B, miniBLOC D KS G G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings

ph-12 diode

Abstract: IXUN350N10 mosfet base inverter with chargers circuit on509 MOSFET "MARKING CODE 7V" IXUN350N 60175a
Contextual Info: IXUN350N10 Trench Power MOSFET Very low RDS on VDSS = 100 V ID25 = 350 A RDS(on) typ. = 1.9 mΩ SOT-227 B, miniBLOC D KS G G KS S S D G = Gate, D = Drain, S = Source, KS = Kelvin Source Features MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings