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    L-com Inc CA2000MM-2M

    Cable Assy, Scsi Ultra Plug-Plug, 6.6 ; Connector Type A:Scsi Ultra Cn68 Plug; Connector Type B:Scsi Ultra Cn68 Plug; Cable Length - Imperial:6.6Ft; Cable Length - Metric:2M; Jacket Color:Light Gray; Product Range:Ca2000Mm Series Rohs Compliant: Yes |L-Com CA2000MM-2M
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    2000MM2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8994B FW217A N-Channel Power MOSFET http://onsemi.com 35V, 6A, 39mΩ, Dual SOIC8 Features • • • • On-state resistance RDS on 1=30mΩ (typ.) 4.5V drive Halogen free compliance Protection Diode in Specifications Absolute Maximum Ratings at Ta=25°C


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    EN8994B FW217A 2000mm2Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN8998C FW344A Power MOSFET http://onsemi.com 30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8 Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive Halogen free compliance


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    EN8998C FW344A PDF

    A1598

    Abstract: FW274 W274
    Text: FW274 Ordering number : ENA1598 SANYO Semiconductors DATA SHEET FW274 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


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    FW274 ENA1598 PW10s) 2000mm2 PW10s A1598-4/4 A1598 FW274 W274 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA0273B FW4604 Power MOSFET 30V, 6A, 39mΩ, –30V, –4.5A, 65mΩ, Complementary Dual SOIC8 http://onsemi.com Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in • • • Nch : RDS on 1=30mΩ(typ.)


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    ENA0273B FW4604 A0273-7/7 PDF

    IAV2A

    Abstract: No abstract text available
    Text: Ordering number : ENA2066A FW389 Power MOSFET 100V, 2A, 225mΩ, –100V, –2A, 300mΩ, Complementary Dual SOIC8 http://onsemi.com Features • Input Capacitance Nch : Ciss=490pF typ. • ON-resistance Nch : RDS(on)1=165mW(typ.) Pch : RDS(on)1=230mW(typ.)


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    ENA2066A FW389 490pF 165mW 230mW 1000pF 100ms) A2066-8/8 IAV2A PDF

    PA1758

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1758 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.


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    PA1758 PA1758 PDF

    Untitled

    Abstract: No abstract text available
    Text: FW4604 Ordering number : ENA0273 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW4604 General-Purpose Switching Device Applications Features • On-state resistance • 4.5V drive Halogen free compliance Nch + Pch MOSFET Protection diode in


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    ENA0273 FW4604 PW10s) 2000mm2 PW10s A0273-6/6 PDF

    70720

    Abstract: ENA0176
    Text: FW216A Ordering number : ENA0176 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW216A General-Purpose Switching Device Applications Features ON-resistance Nch : RDS on 1=49mΩ (typ.) 4.0V drive Halogen free compliance • • • Specifications


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    ENA0176 FW216A PW10s) 2000mm2 PW10s A0176-4/4 70720 ENA0176 PDF

    Untitled

    Abstract: No abstract text available
    Text: FW813 Ordering number : ENA1884 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW813 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=39mΩ (typ.) 4V drive Nch + Nch MOSFET Specifications Absolute Maximum Ratings at Ta=25°C


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    ENA1884 FW813 PW10s, 2000mm2 PW10s A1884-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: LTC3250-1.5/LTC3250-1.2 High Efficiency, Low Noise, Inductorless Step-Down DC/DC Converter FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO 2.7V to 5.5V Input Voltage Range No Inductors Li-Ion 3.6V to 1.5V with 81% Efficiency Low Noise Constant Frequency Operation


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    LTC3250-1 5/LTC3250-1 250mA OT-23 LTC3412 TSSOP16E LTC3440 600mA LTC3441 PDF

    w241

    Abstract: No abstract text available
    Text: Ordering number : ENN6939 N-Channel Silicon MOSFET FW241 'SAMYO, Ultrahigh-Speed Swiching Applications Features Package Dimensions • T his c o m p o s ite device allow s high density m o u n tin g by unit : m m in corpo rating tw o M O S F E T chips in one p ackag e that


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    ENN6939 FW241 FW241] w241 PDF

    PA1760

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1760 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1760 is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management 8 5 application of notebook computers.


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    PA1760 PA1760 PDF

    FW250

    Abstract: W250 75482
    Text: Ordering number : ENN7548 FW250 N-Channl Silicon MOSFET FW250 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switcing. 4V drive. unit : mm 2129 [FW250] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 Specifications


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    ENN7548 FW250 FW250] PW10s) FW250 W250 75482 PDF

    A1202

    Abstract: MCH6440
    Text: MCH6440 注文コード No. N A 1 2 0 2 A 三洋半導体データシート 半導体データシート No.N1202 をさしかえてください。 MCH6440 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


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    MCH6440 N1202 2000mm2 300mA 300mA, 150mA, IT13426 600mA A1202 MCH6440 PDF

    W261

    Abstract: fw261 IT10289 TB-00001816
    Text: FW261 Ordering number : EN8749 N-Channel Silicon MOSFET FW261 General-Purpose Switching Device Applications Features • • Low ON-resistance. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage


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    FW261 EN8749 PW10s) PW100ms) 2000mm2 PW10s W261 fw261 IT10289 TB-00001816 PDF

    mpf110

    Abstract: FW359
    Text: 注文コード No. N 7 5 4 9 FW359 三洋半導体データシート N FW359 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗超高速スイッチング , 4V 駆動の N チャネルおよび P チャネル MOS 形電界効果トランジスタを


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    FW359 100ms 2000mm2 --14A --30V IT06063 IT06064 mpf110 FW359 PDF

    PA1755

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA1755 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DRAWING Unit : mm DESCRIPTION This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power 8 5 1 ; Source 1 2 ; Gate 1


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    PA1755 PA1755 PDF

    fw341

    Abstract: D2004 W341
    Text: FW341 Ordering number : ENN7922 N-Channel and P-Channel Silicon MOSFETs FW341 General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Ultrahigh-speed switching. Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage


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    FW341 ENN7922 PW10s) fw341 D2004 W341 PDF

    W359

    Abstract: FW359 75493
    Text: Ordering number : ENN7549 FW359 N-Channel and P-Channel Silicon MOSFETs FW359 Ultrahigh-Speed Switching Applications Features The FW359 in corporates a N-channel MOSFET unit : mm and a P-channel MOSFET that feature 2129 low ON-resistance, ultrahigh-speed switching,


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    ENN7549 FW359 FW359 FW359] W359 75493 PDF

    FSS218

    Abstract: S218 INVERTER motor drive SANYO
    Text: FSS218 Ordering number : ENA0189A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FSS218 General-Purpose Switching Device Applications Features • • • Motor drive applications. Inverter drive applications. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    FSS218 ENA0189A PW10s) 2000mm2 PW10s A0189-4/4 FSS218 S218 INVERTER motor drive SANYO PDF

    W906

    Abstract: FW906
    Text: FW906 Ordering number : ENA1809 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW906 General-Purpose Switching Device Applications Features • • • ON-resistance Nch: RDS on 1=18mΩ(typ.), Pch: RDS(on)1=31mΩ(typ.) 4V drive N-channel MOSFET + P-channel MOSFET


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    FW906 ENA1809 PW100ms) PW10s) A1809-6/6 W906 FW906 PDF

    Untitled

    Abstract: No abstract text available
    Text: FW216A Ordering number : ENA0176B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW216A General-Purpose Switching Device Applications Features ON-resistance Nch : RDS on 1=49mΩ (typ.) 4.0V drive Halogen free compliance • • • Specifications


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    FW216A ENA0176B 2000mm2Ã A0176-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: ML2002 Preliminary ML2002 Series Static/Half Duty LCD COG Driver 1 Application 2 2 2 2 2 1 Features 3 General Purpose Clock 3 High quality instrument Telephone, mobile phone 3 Automotive Handheld Device like PDA, MP3, or 3 3 PMP 3 3 3 3 3 3 3 3 A Gold Bump Chip which can reduce pin count and area.


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    ML2002 2000mm2 P13/13 PDF

    Untitled

    Abstract: No abstract text available
    Text: FW344A Ordering number : EN8998C SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs FW344A General-Purpose Switching Device Applications Features • • • • ON-resistance Nch : RDS on 1=49mΩ(typ.) Pch : RDS(on)1=78mΩ(typ.) 4V drive


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    FW344A EN8998C PDF