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hy5rs123235b

Abstract: HY5RS123235BFP HY5RS123235
Contextual Info: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

C101

Abstract: SN65LVCP22 SN65LVCP23 SN65LVCP23D SN65LVCP23PW SN65LVDS101 redundant transmission LVCP23
Contextual Info: SN65LVCP23 www.ti.com SLLS554 – NOVEMBER 2002 2x2 2000 Mbps LVPECL CROSSPOINT SWITCH Crosspoint Switch D LVDS Crosspoint Switch Available in SN65LVCP22 D Low-Jitter 2000-Mbps Fully Differential Data Path D 20 ps Typ , 40 ps (Max), of Peak-to-Peak Jitter With PRBS = 223–1 Pattern at 2000 Mbps

HY5RS573225AFP-14

Abstract: 11mmx14mm HY5RS573225AFP-16 136ball HY5RS573225AFP HY5RS573225AFP-12 hynix gddr3 hy5rs573225afp-11
Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

136ball

Abstract: HY5RS573225AFP2 HY5RS573225AFP samsung k9 derating HY5RS573225AFP-11
Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

K4W1G1646E

Abstract: K4W1G1646E-HC11
Contextual Info: Rev. 1.3, Mar. 2011 K4W1G1646E 1Gb E-die gDDR3 SDRAM 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

K4W1G1646D-EC15

Abstract: K4W1G1646D-EJ11 K4W1G1646D-EC gDDR3-1800 DDR3 DIMM 240 pinout GDDR3 SDRAM 256Mb JESD51-2 VIH150 SAMSUNG GDDR3 K4W1G1646D
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

ELPIDA DDR User

Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

HY5RS573225B

Abstract: BA1 K11
Contextual Info: HY5RS573225BFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

hynix gddr3

Abstract: 136ball HY5RS573225AFP HY5RS573225AFP2 HY5RS573225AFP-14 AP 4750 HY5RS573225A
Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

K4W1G1646E-HC12

Abstract: K4W1G1646E samsung K4W1G1646E-HC11 K4W1G1646E-HC11 gddr3 1066MB gDDR3-1333 K4W1G1646E-HC1A DDR3 DIMM 240 pinout gDDR3-2000
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT

Contextual Info: HY5RS573225AFP 256M 8Mx32 GDDR3 SDRAM HY5RS573225AFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: Memory Product Specification DK.04GAM.F9SK2 4GB 2GB 256M x 64Bit x 2pcs Kit DDR3-2000MHz CL9 Overclocking Unbuffered DIMM Description: The overclocking unbuffered Module is a kit of two 256M x 64bit of 2GB DDR3-2000MHz CL9-9-9-27 at 1.65v Memory Module. The Module base on sixteen 128M x 8-bit DDR3 FBGA SDRAM compoments.

MAX9979

Abstract: max9957 APP4338 RG58C
Contextual Info: Maxim > App Notes > Automatic Test Equipment ATE Keywords: cable loss, skin effect, dielectric loss, automated test equipment, ATE, electronic compensation, equalizing, pin electronics, bandwidth reduction, cable droop, overshoot voltage, comparator, semi rigid,

RTL8168

Abstract: Realtek RTL8169 RTL8169 RF1119 RTL8169 BootROM RTL8169 reference design realtek rtl8169 programming realtek rtl8139 programming rtl8169 reference RTL8139 reference design
Contextual Info: RTL8169 REALTEK GIGABIT ETHERNET MEDIA ACCESS CONTROLLER WITH POWER MANAGEMENT RTL8169 8.2.1 Target Read. 37 8.2.2 Target Write. 38 8.2.3 Master Read. 38

Contextual Info: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

H5RS5223CFR-11C

Abstract: H5RS5223CFR BA2-H10 ba2h3 H5RS5223CFR11C
Contextual Info: H5RS5223CFR 512Mbit 16Mx32 GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

hy5rs123235b

Abstract: hy5rs123235bfp-14 HY5RS123235 HY5RS123235BFP-1
Contextual Info: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

K4W1G1646E

Abstract: samsung K4W1G1646E-HC11
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646E 1Gb gDDR3 SDRAM E-die 96 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

K4W1G1646D-EC15

Abstract: K4W1G1646D
Contextual Info: 1Gb gDDR3 SDRAM K4W1G1646D 1Gb gDDR3 SGRAM D-die 100 FBGA with Lead-Free & Halogen-Free RoHS Compliant CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC progress.

BCM5312

Abstract: bcm5288 IEEE802 LinoWave Solutions linowave bcm5312bcm5288b5011 b5011 IEEE 802.3u 100Base 34-Specifications
Contextual Info: Datasheet LW 244-G switch LinoWave Solutions G-02 Ground Floor, Lulu Bldg. Dubai Internet City P.O. Box 282341 Dubai, UAE www.linowave.com 1/4 Product Review Switches are small hardware network device with multiple ports in one network whose task is to copy frames from one port to another