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    20005000 Search Results

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    20005000 Price and Stock

    Mill-Max Mfg Corp 830-10-002-20-005000

    CONN HDR STRIP SOLDER 2POS GOLD
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    DigiKey 830-10-002-20-005000 Bulk 247 1
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    Sager 830-10-002-20-005000 50
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    Mill-Max Mfg Corp 830-10-003-20-005000

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    DigiKey 830-10-003-20-005000 Tube 130 1
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    Sager 830-10-003-20-005000 50
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    Mill-Max Mfg Corp 830-10-010-20-005000

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    DigiKey 830-10-010-20-005000 Tube 121 1
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    Sager 830-10-010-20-005000 50
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    Mill-Max Mfg Corp 830-10-008-20-005000

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    DigiKey 830-10-008-20-005000 Tube 80 1
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    Sager 830-10-008-20-005000 50
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    Mill-Max Mfg Corp 830-10-004-20-005000

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    DigiKey 830-10-004-20-005000 Tube 76 1
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    Mouser Electronics 830-10-004-20-005000 392
    • 1 $4.91
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    Sager 830-10-004-20-005000 50
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    20005000 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Coaxial ZASW-2-50DR+ ZASW-2-50DR High Isolation Switch 50Ω SPDT, TTL Driver, Reflective Maximum Ratings Features Operating Temperature Storage Temperature Input Power DC to 5000 MHz • wideband, DC to 5 GHz • integral TTL driver • high isolation, 82 dB typ. at 2 GHz


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    ZASW-2-50DR+ ZASW-2-50DR CY353 ZASW-2-50DR( 2002/95/EC) ZASW-2-50DR PDF

    RC0038

    Abstract: Fast Recovery RC0038D
    Text: SUM20F & FSMS thru SUM50F & FSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 0.5 AMP 2000-5000 VOLTS 180 nsec HIGH VOLTAGE


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    SUM20F SUM50F RC0038D RC0038 Fast Recovery RC0038D PDF

    2SD1457

    Abstract: 2SD1457A NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High DC current gain ・DARLINGTON ・High VCBO APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SD1457 2SD1457A 2SD1457 2SD1457A NPN POWER DARLINGTON TRANSISTORS PDF

    2SC4350

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SC4350 O-220 O-220) 2SC4350 NPN POWER DARLINGTON TRANSISTORS PDF

    aswa-2-50dr

    Abstract: No abstract text available
    Text: NON-CATALOG ASWA-2-50DR+ Surface Mount Switch ASWA-2-50DR 50Ω High Isolation, SPDT, Maximum Ratings Operating Temperature Features • high isolation, 50 dB typical at 5GHz • low insertion loss, 1 dB typical • integral TTL driver -20°C to 85°C Storage Temperature


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    ASWA-2-50DR+ ASWA-2-50DR DR788 2002/95/EC) M113193 aswa-2-50dr PDF

    DSPHEX

    Abstract: TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013
    Text: TMS320C1x/C2x/C2xx/C5x Assembly Language Tools User’s Guide 1995 Microprocessor Development Systems Printed in U.S.A., March 1995 SDS SPRU018D TMS320C1x/C2x/C2xx/C5x Assembly Language Tools 1995 User’s Guide TMS320C1x/C2x/C2xx/C5x Assembly Language Tools


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    TMS320C1x/C2x/C2xx/C5x SPRU018D DSPHEX TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013 PDF

    2SA1718

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application


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    2SA1718 O-220F O-220F) -30mA; -100V 2SA1718 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-3286 Stanford Microdevices’ SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-3286 50-ohm SGA-3286 DC-3600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to


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    SGA-6389 50-ohm SGA-6389 DC-3000 EDS-100620 PDF

    SGA-6289

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-6289 50-ohm SGA-6289 DC-3500 EDS-100619 PDF

    Stanford amplifier

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-4286 Stanford Microdevices’ SGA-4286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-4286 50-ohm SGA-4286 DC-3500 Stanford amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-4486 Stanford Microdevices’ SGA-4486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-4486 50-ohm SGA-4486 DC-2000 PDF

    Stanford amplifier

    Abstract: No abstract text available
    Text: Preliminary Product Description SGA-2286 Stanford Microdevices’ SGA-2286 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-2286 50-ohm SGA-2286 DC-3500 Stanford amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: SUM20UF & UFSMS thru SUM50UF & UFSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 0.4 AMP 2000-5000 VOLTS 60 nsec HIGH VOLTAGE


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    SUM20UF SUM50UF RC0040D PDF

    2SB950A

    Abstract: 2SB950 2SD1276 2SD1276A
    Text: Power Transistors 2SB950, 2SB950À 2SB950, 2SB950A Package Dimensions U n it I mm 4.4max. 10.2m ax, Silicon PNP Epitaxial Planar Darlington Type 5.7iria*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD 1276, 2S D 1276A * 3 .1 ± 0 .1 • Features


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    2SB950, 2SB950Ã 2SB950A 2SD1276, 2SD1276A 2SB950 2SB950A 2SD1276 2SD1276A PDF

    2SB939

    Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
    Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching


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    2SB939, 2SB939A 2SD1262, 2SD1262A 2SB939 2SB939A 2SD1262 2SD1262A high current Darlington pair IC PDF

    2sb117

    Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
    Text: Power T ransistors 2SB1179, 2SB1179A 2SB1179, 2SB1179A Package Dim ensions Unit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3max. Pow er Amplifier, Switching C om plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A • Features 0.9 ± 0 .1


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    2SB1179, 2SB1179A 2SD1749, 2SD1749A 2SB1179 2sb117 2SB1179A 2SD1749 2SD1749A PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Symbol : KSB794 Rating Unit V cbO - 60 V VcBO - 80 V VcEO - 60 V VcEO


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    KSB794/795 KSB794 KSB795 KSB794 350ns, PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Collector- Base Voltage Symbol : KSB794 : KSB795 Collector- Emitter Voltage : KSB794 Rating Unit


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    KSB794/795 KSB795 KSB794 300jis, KSB794 PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one


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    2SD1457, 2SD1457A 2SD1457 PDF

    2SD1630

    Abstract: No abstract text available
    Text: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching


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    2SD1630 2sd1630ii, 2SD1630 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT


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    SGA-3286 50-ohm DC-3600 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


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    SGA-5286 SGA-5286 50-ohm DC-4000 EDS-100610 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.


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    SGA-5489 SGA-5489 50-ohm DC-2400 EDS-100618 PDF