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    200 WATTS AUDIO POWER AMP TRANSISTORS Search Results

    200 WATTS AUDIO POWER AMP TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    200 WATTS AUDIO POWER AMP TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


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    PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


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    PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    mje243

    Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
    Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —


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    PDF MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors

    MJE200

    Abstract: MJE210
    Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —


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    PDF MJE200 MJE210 MJE200 MJE210

    SG505

    Abstract: MC14046 application u1d diode MC14575 NTP12N10 12P10 table for speaker crossover 1N4148 1N5242B C10A
    Text: AN1042/D High Fidelity Switching Audio Amplifiers Using TMOS Power MOSFETs Prepared by: Donald E. Pauly ON Semiconductor Special Consultant http://onsemi.com APPLICATION NOTE With the introduction of complementary bipolar power transistors in the late 1960s, switching amplifiers became


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    PDF AN1042/D 1960s, r14525 SG505 MC14046 application u1d diode MC14575 NTP12N10 12P10 table for speaker crossover 1N4148 1N5242B C10A

    TRANSISTOR MJE15031

    Abstract: mje15031
    Text: ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high−frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes • • hFE = 40 Min) @ IC = 3.0 Adc


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    PDF MJE15028* MJE15030* MJE15029* MJE15031* MJE15028, MJE15029 MJE15030, MJE15031 O-220AB MJE15028 TRANSISTOR MJE15031

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high−speed switching applications. • Low Collector−Emitter Sustaining Voltage — • • 4 AMPERE


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    PDF BD787 BD788 BD787, BD788 BD787

    NTE153

    Abstract: Nte 157 NTE123AP nte129 NTE159M nte123
    Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BV ceo BV ebo &FE T018 28a •c 0.8 BVcbo Amp, Audio to VHF Freq.,


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    PDF NTE159M) NTE159) T066- NTE123A) NTE153 Nte 157 NTE123AP nte129 NTE159M nte123

    t0218

    Abstract: 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) typical <T Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BV ebo Ufe Pd


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    PDF 407-512MHz) O39EC NTE391) T0218 NTE390) 200 watts audio amp power transistors NTE377 NTE374 NTE373 NTE374 NTE382 NTE392 45W AMP NTE373 25w audio

    NPN MATCHED PAIRS

    Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
    Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60


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    PDF NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58

    332MCP

    Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
    Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.


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    PDF 297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092

    Nte187

    Abstract: NTE38 nte193a
    Text: BI-POL AR TRANSISTORS Maximum Collector Current Amps Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) NTE Type Number Polarity and


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    PDF T0202 NTE193A) T092HS NTE192A) Nte187 NTE38 nte193a

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


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    PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291

    NTE130

    Abstract: 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211
    Text: BI-POLAR TRANSISTORS Maximum Collector Power Dissipation Watts BV ebo " fe Pd *T 4 30 Min 8 150 80 (CER) 5 20 Min 50* 1.8 4 80 (CER) 5 20 Min 50* 4 Collector to Base (Volts) Collector to Emitter (Volts) Emitter to Base (Volts) 'c 1.5 BVcbo BVceo 70 70 (CER)


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    PDF 27MHz, NTE197) T0220 NTE196) 27MHz) T039HS NTE130 27mhz rf amplifier NTE197 NTE199 NTE241 16 amp npn darlington power transistors t03 27mhz rf ic NTE196 NTE210 NTE211

    NTE130

    Abstract: NTE199 NPN RF Amplifier NTE241
    Text: BI-POLAR TRANSISTORS Olag. No. •c 0VCBO BVceo BV ebo hFE Pd •t RF Pwr Amp/Driver, CB P0 = 3.5W Min, 27MHz, 12.5V T 039 21a 1.5 70 70 (CEFt) 4 30 Min 8 150 NPN-Si Audio Power Output & Medium Power Switching (Compì to NTE 197) T0220 11 a 7 90 80 (CER)


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    PDF 27MHz, NTE234) NTE211) NTE210) T0220 T0220 NTE130 NTE199 NPN RF Amplifier NTE241

    ecg68

    Abstract: uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG58 ECG59 ECG60 ECG60MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application Collector To Emitter Volts BVce O Base to Emitter Volts b v Ebo Max. Collector Current Iç Amps Freq. In MHz »t


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    PDF ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg68 uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG60MP

    NTE37

    Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
    Text: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100


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    PDF NTE36 59alt NTE36) 37MCP NTE36 NTE37 NTE175) T0126tchmode NTE55) T0220 NTE37 NTE43 NTE50 NTE175 NTE42 NTE45 T0126 T066 NTE55

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • • • 15 AMPERE POWER TRANSISTORS


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    PDF MJ15001 MJ15002 O-204AA J15001 MJ15001 MJ15002

    TF 450

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Case Style Diag. No. Maximum Collector Current (Amps) BVceo BVebo h FE Pd fT T0218


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    PDF T0218 NTE2305) T0220 TF 450

    transistor t4 3570

    Abstract: 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDM M JD200 Complementary Plastic Power Transistors PNP M JD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low-power, hlgh-galn audio amplifier applications. • Collector-Emltter Sustaining Voltage —


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    PDF JD200 JD210 MJD200-1) transistor t4 3570 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd

    JE15030

    Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade


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    PDF MJE15028, MJE15029 MJE15030, MJE15031 -22OAB MJE15028 JE1S030M JE15029 MJE1S031 MJE15029 JE15030 JE15031 JE-15028 15029 MJE16028 JE-1502 JE15028

    NTE2360

    Abstract: No abstract text available
    Text: BI-POL AR TRANSISTORS Emitter to Base Volts Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) »T Case Style Diag. No. BVCeo BV ebo hpE Pd T0220 Isol Tab 560a •c 8 BV cbo Darlington Switch w/lntemal Damper & Zener Diode, tf = 1ns 60±10 60±10


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    PDF T0220 T0126 NTE2362) NTE2361) 00D3S27 NTE2360

    JE243

    Abstract: JE253 je 243 Transistor 834
    Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •


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    PDF MJE243/D MJE243, MJE253 O-225AA JE243 JE253 je 243 Transistor 834