200 AMPERE TRANSISTOR DATASHEET Search Results

PD432206

Abstract: powerex igbt six pack igbt module testing SCR 2000V 1000A CM400DU-24NFH ND411635 CM150DU-24NFH MIL-STD-1189 pwm INVERTER welder CM400DU-12NFH
Contextual Info: News of Importance to Power Semiconductor Users www.pwrx.com FOURTH QUARTER 2003 Powerex NFH-Series Cuts Esw off /A In Half Designed for use in high frequency applications – 30kHz for hard switching applications and 60 to 70 kHz for soft switching applications – the Powerex NFH-Series IGBT features an

Contextual Info: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MJ802 High-Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100-Watts music power per channel.

Contextual Info: , LJnc. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 FAST NPN SWITCHING TRANSISTOR NPN BUV28 high speed transistors suited for low voltage application: " High Frequency and Efficiency Converters

Contextual Info: , < Jnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N6049 MEDIUM-POWER PNP SILICON TRANSISTOR 4 AMPERE . . . designed for general-purpose switching and amplifier applications POWER TRANSISTOR

Contextual Info: l c/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 MJ10042 MJ10045 MJ10048 25, GO, and 100 AMPERE NPN SILICON POWER DARLINGTON TRANSISTOR 25 KVA ENERGY MANAGEMENT SERIES SWITCHMODE DARLINGTON TRANSISTORS

Contextual Info: JbEtnL-Conauctoi ^Pioaucti, Una. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS NPN PNP MJE2801T MJE2901T . designed for use as output device in complementary audio

motorola sps transistor

Abstract: 851 MOTOROLA Motorola bipolar transistor 477 motorola transistor mj3001 MJ3001 motorola
Contextual Info: MOTOROLA Order this document by MJ2501/D SEMICONDUCTOR TECHNICAL DATA PNP MJ2501 NPN M edium -Power Com plem entary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applica tions. • High DC Current Gain — hFE = 4000 Typ @ lc = 5.0 Ade

Motorola Power Transistor

Abstract: BD791
Contextual Info: MOTOROLA Order this document by BD791/D SEMICONDUCTOR TECHNICAL DATA BD791 NPN Plastic Silicon Power Transistor Motorola Preferred Device . . . designed for low power audio amplifier and low-current, high speed switching appti cations. • High Collector-Emitter Sustaining Voltage —

mj423 motorola

Abstract: mj423
Contextual Info: MOTOROLA Order this document by MJ423/D SEMICONDUCTOR TECHNICAL DATA MJ423 High-Voltage NPN Silicon Transistor 10 AMPERE POWER TRANSISTOR NPN SILICON 4M VOLTS 125 WATTS . . . designed for medium-to-high voltage inverters, converters, regulators and switching circuits.

Contextual Info: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 MJ10005 FAX: (973) 376-8960 SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode 20 AMPERE NPN SILICON POWER DARLINGTON

MJ-10000

Contextual Info: ^E.mi-Condu<itoi ^Pioduch, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON

B0159

Contextual Info: MOTOROLA Order this document by B0159/0 SEMICONDUCTOR TECHNICAL DATA ESDI 59 Plastic Medium Power NPN Silicon Transistor . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTOR

Teledyne J411-9WP

Abstract: GRF331
Contextual Info: Electromechanical Relays Selection Guide Latching RF Non-Latching JAN Surface-Mount Established Reliability 4PST Loopback Environmental Attenuated Switching Solutions Teledyne Relays has been the world’s innovative leader in the manufacture of ultraminiature, hermetically sealed,

Contextual Info: ^s-mi-donaaatoi £Ptoducts., One. TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high-voltage, high-current Darlington transistors

UC3823

Contextual Info: ą UC282Ć1, UC282Ć2, UC282Ć3, UC282ĆADJ, UC382Ć1, UC382Ć2, UC382Ć3, UC382ĆADJ FAST LDO LINEAR REGULATOR SLUS317A – JANUARY 2000 - REVISED MAY 2001 D D D D D D D D Fast Transient Response 10-mA to 3-A Load Current Short Circuit Protection Maximum Dropout of 450-mV at 3-A Load

Contextual Info: tSstni-Conauctoi Lpi , L/nc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ10041 MJ10044 MJ10047 26,50, and 100 AMPERE - NPN SILICON POWER DARLINGTON TRANSISTOR 25 kVA ENERGY MANAGEMENT SERIES

NT 407 F power transistor

Abstract: NT 407 F transistor BD241C-D b0242b
Contextual Info: MOTOROLA Order this document by BD241C/D SEMICONDUCTOR TECHNICAL DATA BD241C* PNP Com plem entary Silicon Plastic Power Transistors BD242B BD242C* . . . designed for use in general purpose amplifier and switching applications. • Collector-Emitter Saturation Voltage —

2N6421

Contextual Info: 20 STERN AVE SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators, converters,

digital jukebox

Contextual Info: ą UC282Ć1, UC282Ć2, UC282Ć3, UC282ĆADJ, UC382Ć1, UC382Ć2, UC382Ć3, UC382ĆADJ FAST LDO LINEAR REGULATOR SLUS317A – JANUARY 2000 - REVISED MAY 2001 D D D D D D D D Fast Transient Response 10-mA to 3-A Load Current Short Circuit Protection Maximum Dropout of 450-mV at 3-A Load

SLVA079

Contextual Info: ą UC285Ć1, UC285Ć2, UC285Ć3, UC285ĆADJ, UC385Ć1, UC385Ć2, UC385Ć3, UC385ĆADJ FAST TRANSIENT RESPONSE 5ĆA LOWĆDROPOUT REGULATOR SLUS212D – NOVEMBER 1999 – REVISED JANUARY 2001 D D D D D D D D Fast Transient Response 10-mA to 5-A Load Current

Contextual Info: tSe.mi-Conciu.cko'i ^Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line-operated equipment requiring high ff.

Contextual Info: MOTOROLA Order this document by MJE4343/D SEMICONDUCTOR TECHNICAL DATA NPN MJE4343 High-Voltage — High Power Transistors PNP MJE4353 . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector-Emitter Sustaining Voltage —

Contextual Info: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MFE930 MFE960 MFE990 2.0 AMPERE N-CHANNEL ENHANCEMENT-MODE TMOS FIELD-EFFECT TRANSISTOR N-CHANNEL TMOS FET These TMOS FETs are designed for high-speed switching applications such as switching power supplies, CMOS logic, microprocessor or TTL-to-high current interface and line drivers.

MTM55N10

Contextual Info: fy«_/ ^smi-donauctoi LProducti, One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM55N10 MTM60N06 55 and 60 AMPERE N-CHANNEL TMOS POWER FETs N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR